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21 条记录 (耗时 0.044 秒)

    Chemically amplified photoresist composition and process for its use
    8.
    发明授权
    Chemically amplified photoresist composition and process for its use 有权
    化学扩增的光致抗蚀剂组合物及其使用方法

    公开(公告)号：US09057951B2

    公开(公告)日：2015-06-16

    申请号：US12547808

    申请日：2009-08-26

    申请人： Robert D. Allen ,  Phillip J. Brock ,  Richard A. DiPietro ,  Hoa D. Truong

    发明人： Robert D. Allen ,  Phillip J. Brock ,  Richard A. DiPietro ,  Hoa D. Truong

    IPC分类号： G03F7/039 ,  G03F7/30

    CPC分类号： G03F7/0392 ,  G03F7/0397 ,  G03F7/30

    摘要： Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.

    摘要翻译： 光致抗蚀剂组合物包括酚类聚合物与不含含醚和/或羧酸的部分的（甲基）丙烯酸酯基共聚物的共混物。 （甲基）丙烯酸酯共聚物包括选自丙烯酸烷基酯，取代的丙烯酸烷基酯，（甲基）丙烯酸烷基酯，取代的甲基丙烯酸烷基酯及其混合物的第一单体和选自以下的第二单体： 丙烯酸酯，（甲基）丙烯酸酯或其具有酸可裂解酯取代基的混合物; 和光致酸发生器。 还公开了用光致抗蚀剂组合物在衬底上产生光致抗蚀剂图像的方法。

    CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND PROCESS FOR ITS USE
    9.
    发明申请
    CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND PROCESS FOR ITS USE 有权
    化学放大光电组合物及其使用方法

    公开(公告)号：US20110053083A1

    公开(公告)日：2011-03-03

    申请号：US12547808

    申请日：2009-08-26

    申请人： Robert D. Allen ,  Phillip J. Brock ,  Richard A. DiPietro ,  Hoa D. Truong

    发明人： Robert D. Allen ,  Phillip J. Brock ,  Richard A. DiPietro ,  Hoa D. Truong

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0392 ,  G03F7/0397 ,  G03F7/30

    摘要： Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.

    摘要翻译： 光致抗蚀剂组合物包括酚类聚合物与不含含醚和/或羧酸的部分的（甲基）丙烯酸酯基共聚物的共混物。 （甲基）丙烯酸酯共聚物包括选自丙烯酸烷基酯，取代的丙烯酸烷基酯，（甲基）丙烯酸烷基酯，取代的甲基丙烯酸烷基酯及其混合物的第一单体和选自以下的第二单体： 丙烯酸酯，（甲基）丙烯酸酯或其具有酸可裂解酯取代基的混合物; 和光致酸发生器。 还公开了用光致抗蚀剂组合物在衬底上产生光致抗蚀剂图像的方法。

    SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES
    10.
    发明申请
    SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES 有权
    用于整合电介质材料和互连结构的旋转抗反射涂层（SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES

    公开(公告)号：US20100207276A1

    公开(公告)日：2010-08-19

    申请号：US12772451

    申请日：2010-05-03

    申请人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

    发明人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

    IPC分类号： H01L23/522 ,  C09D5/00

    CPC分类号： H01L21/76808 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0276 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/24802 ,  H01L2924/00

    摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

    摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。