公开(公告)号：US20120139123A1

公开(公告)日：2012-06-07

申请号：US12960110

申请日：2010-12-03

申请人： Timothy H. Daubenspeck ,  Gary Lafontant ,  Ekta Misra ,  David L. Questad ,  George J. Scott ,  Krystyna W. Semkow ,  Timothy D. Sullivan ,  Thomas A. Wassick ,  Steven L. Wright

发明人： Timothy H. Daubenspeck ,  Gary Lafontant ,  Ekta Misra ,  David L. Questad ,  George J. Scott ,  Krystyna W. Semkow ,  Timothy D. Sullivan ,  Thomas A. Wassick ,  Steven L. Wright

IPC分类号： H01L23/52 ,  G06F17/50 ,  H01L21/44

CPC分类号： G06F17/5068 ,  G06F2217/12 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05541 ,  H01L2224/05552 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/13006 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/3511 ,  Y02P90/265 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2924/00014 ,  H01L2924/014

摘要： Semiconductor structures, methods of manufacture and design structures are provided. The structure includes at least one offset crescent shaped solder via formed in contact with an underlying metal pad of a chip. The at least one offset crescent shaped via is offset with respect to at least one of the underlying metal pad and an underlying metal layer in direct electrical contact with an interconnect of the chip which is in electrical contact with the underlying metal layer.

摘要翻译： 提供半导体结构，制造方法和设计结构。 该结构包括与芯片的下面的金属焊盘接触形成的至少一个偏移月牙形焊料通孔。 至少一个偏移月牙形通孔相对于下面的金属焊盘和下面的金属层中的至少一个与芯片的与下面的金属层电接触的互连直接电接触而偏移。

公开(公告)号：US08298929B2

公开(公告)日：2012-10-30

申请号：US12960110

申请日：2010-12-03

申请人： Timothy H. Daubenspeck ,  Gary Lafontant ,  Ekta Misra ,  David L. Questad ,  George J. Scott ,  Krystyna W. Semkow ,  Timothy D. Sullivan ,  Thomas A. Wassick ,  Steven L. Wright

发明人： Timothy H. Daubenspeck ,  Gary Lafontant ,  Ekta Misra ,  David L. Questad ,  George J. Scott ,  Krystyna W. Semkow ,  Timothy D. Sullivan ,  Thomas A. Wassick ,  Steven L. Wright

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： G06F17/5068 ,  G06F2217/12 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05541 ,  H01L2224/05552 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/13006 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/3511 ,  Y02P90/265 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2924/00014 ,  H01L2924/014

摘要： Semiconductor structures, methods of manufacture and design structures are provided. The structure includes at least one offset crescent shaped solder via formed in contact with an underlying metal pad of a chip. The at least one offset crescent shaped via is offset with respect to at least one of the underlying metal pad and an underlying metal layer in direct electrical contact with an interconnect of the chip which is in electrical contact with the underlying metal layer.

摘要翻译： 提供半导体结构，制造方法和设计结构。 该结构包括与芯片的下面的金属焊盘接触形成的至少一个偏移月牙形焊料通孔。 至少一个偏移月牙形通孔相对于下面的金属焊盘和下面的金属层中的至少一个与芯片的与下面的金属层电接触的互连直接电接触而偏移。

公开(公告)号：US08446006B2

公开(公告)日：2013-05-21

申请号：US12640752

申请日：2009-12-17

申请人： Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Gary LaFontant ,  Ian D. Melville ,  Ekta Misra ,  George J. Scott ,  Krystyna W. Semkow ,  Timothy D. Sullivan ,  Robin A. Susko ,  Thomas A. Wassick ,  Xiaojin Wei ,  Steven L. Wright

发明人： Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Gary LaFontant ,  Ian D. Melville ,  Ekta Misra ,  George J. Scott ,  Krystyna W. Semkow ,  Timothy D. Sullivan ,  Robin A. Susko ,  Thomas A. Wassick ,  Xiaojin Wei ,  Steven L. Wright

IPC分类号： H01L23/498 ,  H01L21/3205

CPC分类号： H01L23/49816 ,  H01L21/76804 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05094 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance.

摘要翻译： 公开了减少焊球中的最大电流密度的结构和方法。 一种方法包括在最后的布线层中形成接触焊盘，并且形成从接触焊盘的侧边缘延伸到多个通孔中的多个通孔的接触焊盘的多个导线。 多个导线中的每一根具有基本上相同的电阻。

公开(公告)号：US08264078B2

公开(公告)日：2012-09-11

申请号：US13324499

申请日：2011-12-13

申请人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

发明人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/03 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/11334 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05552

摘要： In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias that provide electrical connection between the lower level metal line structure located underneath the upper level metal line structure. In another embodiment, the reliability of a C4 ball is enhanced by employing a metal pad structure having a set of integrated metal vias that are segmented and distributed to facilitate uniform current density distribution within the C4 ball. The areal density of the cross-sectional area in the plurality of metal vias is higher at the center portion of the metal pad than at the peripheral portion of the planar portion of the metal pad.

摘要翻译： 在一个实施例中，金属结构的子垫组件位于金属垫的正下方。 子焊盘组件包括邻接金属焊盘的上层金属线结构，位于上层金属线结构下方的下层金属线结构，以及一组在下层金属线结构之间提供电连接的金属通孔 在上层金属线结构下方。 在另一个实施例中，C4球的可靠性通过使用具有一组集成金属通孔的金属焊盘结构而被增强，所述集成金属通孔被分段和分配以便于在C4球内均匀的电流密度分布。 在金属焊盘的中心部分，多个金属通孔中的横截面面积的面密度高于在金属焊盘的平面部分的周边部分。

公开(公告)号：US20120080797A1

公开(公告)日：2012-04-05

申请号：US13324499

申请日：2011-12-13

申请人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

发明人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

IPC分类号： H01L23/48

CPC分类号： H01L24/03 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/11334 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05552

摘要： In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias that provide electrical connection between the lower level metal line structure located underneath the upper level metal line structure. In another embodiment, the reliability of a C4 ball is enhanced by employing a metal pad structure having a set of integrated metal vias that are segmented and distributed to facilitate uniform current density distribution within the C4 ball. The areal density of the cross-sectional area in the plurality of metal vias is higher at the center portion of the metal pad than at the peripheral portion of the planar portion of the metal pad.

摘要翻译： 在一个实施例中，金属结构的子垫组件位于金属垫的正下方。 子焊盘组件包括邻接金属焊盘的上层金属线结构，位于上层金属线结构下方的下层金属线结构，以及一组在下层金属线结构之间提供电连接的金属通孔 在上层金属线结构下方。 在另一个实施例中，C4球的可靠性通过使用具有一组集成金属通孔的金属焊盘结构而被增强，所述集成金属通孔被分段和分配以便于在C4球内均匀的电流密度分布。 在金属焊盘的中心部分，多个金属通孔中的横截面面积的面密度高于在金属焊盘的平面部分的周边部分。

公开(公告)号：US08084858B2

公开(公告)日：2011-12-27

申请号：US12424001

申请日：2009-04-15

申请人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

发明人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/03 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/11334 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05552

摘要： In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias that provide electrical connection between the lower level metal line structure located underneath the upper level metal line structure. In another embodiment, the reliability of a C4 ball is enhanced by employing a metal pad structure having a set of integrated metal vias that are segmented and distributed to facilitate uniform current density distribution within the C4 ball. The areal density of the cross-sectional area in the plurality of metal vias is higher at the center portion of the metal pad than at the peripheral portion of the planar portion of the metal pad.

摘要翻译： 在一个实施例中，金属结构的子垫组件位于金属垫的正下方。 子焊盘组件包括邻接金属焊盘的上层金属线结构，位于上层金属线结构下方的下层金属线结构，以及一组在下层金属线结构之间提供电连接的金属通孔 在上层金属线结构下方。 在另一个实施例中，C4球的可靠性通过使用具有一组集成金属通孔的金属焊盘结构而被增强，所述集成金属通孔被分段和分配以便于在C4球内均匀的电流密度分布。 在金属焊盘的中心部分，多个金属通孔中的横截面面积的面密度高于在金属焊盘的平面部分的周边部分。

公开(公告)号：US20100263913A1

公开(公告)日：2010-10-21

申请号：US12424001

申请日：2009-04-15

申请人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

发明人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

IPC分类号： H05K1/00

CPC分类号： H01L24/03 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/11334 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05552

摘要： In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias that provide electrical connection between the lower level metal line structure located underneath the upper level metal line structure. In another embodiment, the reliability of a C4 ball is enhanced by employing a metal pad structure having a set of integrated metal vias that are segmented and distributed to facilitate uniform current density distribution within the C4 ball. The area1 density of the cross-sectional area in the plurality of metal vias is higher at the center portion of the metal pad than at the peripheral portion of the planar portion of the metal pad.

摘要翻译： 在一个实施例中，金属结构的子垫组件位于金属垫的正下方。 子焊盘组件包括邻接金属焊盘的上层金属线结构，位于上层金属线结构下方的下层金属线结构，以及一组在下层金属线结构之间提供电连接的金属通孔 在上层金属线结构下方。 在另一个实施例中，C4球的可靠性通过使用具有一组集成金属通孔的金属焊盘结构而被增强，所述集成金属通孔被分段和分配以便于在C4球内均匀的电流密度分布。 多个金属通孔中的截面积的面积1密度在金属垫的中心部分比在金属垫的平面部分的周边部分高。

公开(公告)号：US06483583B1

公开(公告)日：2002-11-19

申请号：US09309157

申请日：1999-05-10

申请人： Steven L. Wright ,  Thomas B. Brumback, Jr. ,  William S. Niebur ,  Roland Welle

发明人： Steven L. Wright ,  Thomas B. Brumback, Jr. ,  William S. Niebur ,  Roland Welle

IPC分类号： G01J328

CPC分类号： G01N21/359 ,  A01D41/1277 ,  A01D43/085 ,  G01J3/02 ,  G01J3/28 ,  G01J3/2803 ,  G01J3/42 ,  G01J3/50 ,  G01J3/502 ,  G01N21/3563

摘要： An apparatus and method for utilizing NIR spectrography for measuring major constituents of substances in real time includes a monochromator or other sensor having no moving optical parts. At least one of the monochromator and the substance are moving relative to one another. An NIR radiation source irradiates a substance and the reflected or passed-through radiation is transmitted to the monochromator, which isolates and detects narrow portions of the received spectrum. By analyzing the intensities and wavelengths of the received radiation, the presence and amount of major constituents of the substance can be determined.

摘要翻译： 利用NIR光谱法实时测量物质的主要成分的装置和方法包括单色仪或其他没有移动光学部件的传感器。 至少一个单色器和物质相对于彼此移动。 NIR辐射源照射物质，反射或通过的辐射被传输到单色仪，从而隔离并检测接收光谱的窄部分。 通过分析接收辐射的强度和波长，可以确定物质的主要成分的存在和量。

公开(公告)号：US4987095A

公开(公告)日：1991-01-22

申请号：US207700

申请日：1988-06-15

申请人： John Batey ,  Sandip Tiwari ,  Steven L. Wright

发明人： John Batey ,  Sandip Tiwari ,  Steven L. Wright

IPC分类号： H01L29/78 ,  H01L21/203 ,  H01L21/205 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/336 ,  H01L29/267 ,  H01L29/43

CPC分类号： H01L29/66522 ,  H01L21/28264 ,  H01L21/314 ,  H01L29/267 ,  H01L29/432 ,  Y10S148/149 ,  Y10S438/933 ,  Y10S438/958

摘要： Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a stabilized reconstruction. An elemental semiconductor layer is deposited epitaxially in-situ with the compound semiconductor layer which unpins the surface Fermi level. A layer of insulator material is then deposited on the elemental semiconductor layer by PECVD. In one embodiment, the compound semiconductor is GaAs and the elemental semiconductor is Si. The insulator material is a layer of high quality SiO.sub.2. A metal gate is deposited on the SiO.sub.2 layer to form an MOS device. The epitaxial GaAs layer has a density of states which permits the interface Fermi level to be moved through the entire forbidden energy gap. In another embodiment, the SiO.sub.2 deposition completely consumes the interface Si layer so that the resulting MOS device comprises SiO.sub.2 directly overlying the GaAs layer.

公开(公告)号：US4849802A

公开(公告)日：1989-07-18

申请号：US233851

申请日：1988-08-16

申请人： Thomas N. Jackson ,  Masanori Murakami ,  William H. Price ,  Sandip Tiwari ,  Jerry M. Woodall ,  Steven L. Wright

发明人： Thomas N. Jackson ,  Masanori Murakami ,  William H. Price ,  Sandip Tiwari ,  Jerry M. Woodall ,  Steven L. Wright

IPC分类号： H01L29/45

CPC分类号： H01L29/452

摘要： In a semiconductor device, a contact with low resistance to a III-V compound semiconductor substrate was fabricated using refractory materials and small amounts of indium as the contact material. The contact material was formed by depositing Mo, Ge and W with small amounts of In onto doped GaAs wafers. The contact resistance less than 1.0 ohm millimeter was obtained after annealing at 800.degree. C. and the resistance did not increase after subsequent prolonged annealing at 400.degree. C.

摘要翻译： 在半导体器件中，使用耐火材料和少量的铟作为接触材料制造具有低耐III-V化合物半导体衬底的接触。 通过将Mo，Ge和W与少量的In沉积到掺杂的GaAs晶片上形成接触材料。 800℃退火后获得小于1.0欧姆毫米的接触电阻，在400℃下经过长时间的退火后，电阻不增加。