摘要:
Semiconductor structures, methods of manufacture and design structures are provided. The structure includes at least one offset crescent shaped solder via formed in contact with an underlying metal pad of a chip. The at least one offset crescent shaped via is offset with respect to at least one of the underlying metal pad and an underlying metal layer in direct electrical contact with an interconnect of the chip which is in electrical contact with the underlying metal layer.
摘要:
Semiconductor structures, methods of manufacture and design structures are provided. The structure includes at least one offset crescent shaped solder via formed in contact with an underlying metal pad of a chip. The at least one offset crescent shaped via is offset with respect to at least one of the underlying metal pad and an underlying metal layer in direct electrical contact with an interconnect of the chip which is in electrical contact with the underlying metal layer.
摘要:
Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance.
摘要:
Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.
摘要:
Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.
摘要:
Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.
摘要:
Controlled collapse chip connection (C4) structures and methods of manufacture, and more specifically to structures and methods to improve lead-free C4 interconnect reliability. A structure includes a ball limited metallization (BLM) layer and a controlled collapse chip connection (C4) solder ball formed on the BLM layer. Additionally, the structure includes a final metal pad layer beneath the BLM layer and a cap layer beneath the final metal pad layer. Furthermore, the structure includes an air gap formed beneath the C4 solder ball between the final metal pad layer and one of the BLM layer and the cap layer.
摘要:
A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.
摘要:
A topographical feature is formed proximate to a conductive bond pad that is used to couple a solder bump to a semiconductor die. The topographical feature is separated from the conductive bond pad by a gap. In one embodiment, the topographical feature is formed at a location that is slightly beyond the perimeter of the solder bump, wherein an edge of the bump is aligned vertically to coincide with the gap separating the conductive bond pad from the topographical feature. The topographical feature provides thickness enhancement of a non-conductive layer disposed over the semiconductor die and the conductive bond pad and stress buffering.
摘要:
Controlled collapse chip connection (C4) structures and methods of manufacture, and more specifically to structures and methods to improve lead-free C4 interconnect reliability. A structure includes a ball limited metallization (BLM) layer and a controlled collapse chip connection (C4) solder ball formed on the BLM layer. Additionally, the structure includes a final metal pad layer beneath the BLM layer and a cap layer beneath the final metal pad layer. Furthermore, the structure includes an air gap formed beneath the C4 solder ball between the final metal pad layer and one of the BLM layer and the cap layer.