Process for depositing Cr-bearing layer
    1.
    发明授权
    Process for depositing Cr-bearing layer 失效
    沉积Cr承载层的方法

    公开(公告)号:US5413821A

    公开(公告)日:1995-05-09

    申请号:US273978

    申请日:1994-07-12

    CPC分类号: C23C16/513 C23C16/18

    摘要: A method of applying a Cr-bearing layer to a substrate, comprises introducing an organometallic compound, in vapor or solid powder form entrained in a carrier gas to a plasma of an inductively coupled plasma torch or device to thermally decompose the organometallic compound and contacting the plasma and the substrate to be coated so as to deposit the Cr-bearing layer on the substrate. A metallic Cr, Cr alloy or Cr compound such as chromium oxide, nitride and carbide can be provided on the substrate. Typically, the organometallic compound is introduced to an inductively coupled plasma torch that is disposed in ambient air so to thermally decompose the organometallic compound in the plasma. The plasma is directed at the substrate to deposit the Cr-bearing layer or coating on the substrate.

    摘要翻译: 将含Cr载体层施加到基底的方法包括将夹带在载气中的蒸气或固体粉末的有机金属化合物引入感应耦合等离子体焰炬或装置的等离子体,以热分解有机金属化合物并使 等离子体和待涂覆的基底,以便将Cr承载层沉积在基底上。 可以在基板上设置金属Cr,Cr合金或Cr化合物,例如氧化铬,氮化物和碳化物。 通常,将有机金属化合物引入到设置在环境空气中的电感耦合等离子体焰炬中,以使等离子体中的有机金属化合物热分解。 等离子体被引导到衬底上以将Cr承载层或涂层沉积在衬底上。