公开(公告)号：US5429884A

公开(公告)日：1995-07-04

申请号：US961506

申请日：1992-10-15

申请人： Tohru Namiki ,  Hitoshi Sato ,  Kenichi Nagayama ,  Teruichi Watanabe ,  Masanao Shinkai

发明人： Tohru Namiki ,  Hitoshi Sato ,  Kenichi Nagayama ,  Teruichi Watanabe ,  Masanao Shinkai

IPC分类号： H01L51/52 ,  H05B33/26

CPC分类号： H05B33/26 ,  H01L51/5221 ,  Y10S428/917

摘要： Disclosed are organic EL elements having high environmental stability as well as high luminous efficiency and luminance. In an organic EL element comprising a transparent anode, a hole-carrying layer, a light-emitting layer and an alloy cathode consisting of a first metal Li and a stabilizing second metal Al, all laminated on a substrate, the concentration of the first metal Li contained in the alloy region with a predetermined thickness from the interface between the alloy cathode and the organic layer is controlled to a minute amount ranging from 0.005 wt. % to 0.3 wt. %. In another organic EL element comprising a transparent anode, a hole-carrying layer, a light-emitting layer and an alloy cathode consisting of a first metal Sr and a stabilizing second metal Mg, all laminated on a substrate, the concentration of the first metal Sr contained in the alloy region with a predetermined thickness from the interface between the alloy cathode and the organic layer (light-emitting layer or electron-carrying layer) is controlled to a minute amount ranging from 10 wt. % to 40 wt. %.

摘要翻译： 公开了具有高环境稳定性以及高发光效率和亮度的有机EL元件。 在包括透明阳极，空穴载体层，发光层和由第一金属Li和稳定的第二金属Al组成的合金阴极的有机EL元件中，全部层压在基板上，第一金属 从合金阴极和有机层之间的界面将具有预定厚度的合金区域中包含的Li控制在0.005wt。 ％至0.3wt。 ％。 在包含透明阳极，空穴载体层，发光层和由第一金属Sr和稳定的第二金属Mg组成的合金阴极的有机EL元件全部层压在基板上，第一金属的浓度 从合金阴极和有机层（发光层或电子载体层）之间的界面将具有预定厚度的合金区域中含有的Sr控制在10wt。 ％至40重量％ ％。

公开(公告)号：US5457565A

公开(公告)日：1995-10-10

申请号：US153924

申请日：1993-11-18

申请人： Tohru Namiki ,  Hitoshi Sato ,  Kenichi Nagayama ,  Teruichi Watanabe

发明人： Tohru Namiki ,  Hitoshi Sato ,  Kenichi Nagayama ,  Teruichi Watanabe

IPC分类号： H05B33/22 ,  H01L51/50 ,  H05B33/12 ,  H05B33/14 ,  H05B33/28 ,  G02F1/153

CPC分类号： H05B33/12 ,  H01L51/5092 ,  H05B33/14 ,  H05B33/28 ,  H01L51/5234

摘要： An organic electroluminescent device comprises an anode, a positive-hole transport layer made of an organic compound, an emitting layer made of an organic compound, and a cathode which are layered in sequence, further comprising an electron-injecting layer containing at least one of alkaline earth metal oxides and disposed between the emitting layer and the cathode. This device emits light at a high luminance and a high efficiency upon application of a low voltage together with reduction of the decrement of luminance in the running of emitting light of the device. Selection scope for cathode materials is expanded because of the device is free from the restriction of a low work function for the cathode layer. The cathode can be made a transparent electrode such as ITO. Anode and cathode lines may be formed with low resistance material. As a result, emitting efficiency and life time of the device is improved.

摘要翻译： 一种有机电致发光器件包括阳极，由有机化合物制成的正空穴传输层，由有机化合物制成的发射层和依次层叠的阴极，还包括电子注入层，该电子注入层包含至少一个 碱土金属氧化物并且设置在发光层和阴极之间。 该装置在施加低电压的同时以高亮度和高效率发光，同时降低器件发射光的运行中的亮度减少。 阴极材料的选择范围扩大，因为该器件没有限制阴极层的低功函数。 阴极可以制成诸如ITO的透明电极。 阳极和阴极线可以用低电阻材料形成。 结果，提高了器件的发光效率和寿命。

公开(公告)号：US5302468A

公开(公告)日：1994-04-12

申请号：US921128

申请日：1992-07-29

申请人： Tohru Namiki ,  Hitoshi Sato ,  Kenichi Nagayama ,  Teruichi Watanabe

发明人： Tohru Namiki ,  Hitoshi Sato ,  Kenichi Nagayama ,  Teruichi Watanabe

IPC分类号： G09F9/30 ,  H01L27/32 ,  H01L51/50 ,  H05B33/06 ,  H05B33/12 ,  F21K2/00

CPC分类号： G09F9/33 ,  H01L27/3293 ,  H05B33/06 ,  Y10S428/917

摘要： Disclosed is an organic electroluminescent display apparatus that has small panels each constituted by forming light-emitting sections, each comprising an organic electroluminescent layer, a transparent electrode and a metal electrode, on one major surface of the substrate. The transparent electrode has an extending portion formed to continuously extend from one major surface of the substrate to one side surface. The associated transparent electrodes of adjoining small panels are electrically connected via an anisotropic conductive sheet which has a conductivity only in the thickness direction. This design can narrow the non-light emitting area of each joint of the small panels.

摘要翻译： 公开了一种有机电致发光显示装置，其具有通过在基板的一个主表面上形成各自包含有机电致发光层，透明电极和金属电极的发光部分而构成的小面板。 透明电极具有形成为从衬底的一个主表面连续延伸到一个侧表面的延伸部分。 相邻的小面板的相关联的透明电极通过仅在厚度方向上具有导电性的各向异性导电片电连接。 该设计可以缩小小面板每个接头的非发光面积。

公开(公告)号：US09060051B2

公开(公告)日：2015-06-16

申请号：US12998530

申请日：2009-11-19

申请人： Kiichiro Kitamura ,  Hitoshi Sato

发明人： Kiichiro Kitamura ,  Hitoshi Sato

IPC分类号： E05D11/08 ,  H04M1/02

CPC分类号： H04M1/0216 ,  Y10T16/5385 ,  Y10T16/5387

摘要： A single-shaft semi-automatic hinge, wherein a first cam and a second cam fitted on the single shaft of the hinge passing therethrough are abutted on each other with pressure application by an elastic member, thereby generating a rotational friction torque; a region of the first cam and the second cam in which a liquid crystal portion can rotate from a state in which a main body portion and the liquid crystal portion are folded to a fully open state is set narrower than a region in which the hinge can rotate.

摘要翻译： 单轴半自动铰链，其中安装在通过其的铰链的单个轴上的第一凸轮和第二凸轮通过弹性构件施加压力而彼此抵靠，从而产生旋转摩擦转矩; 其中液晶部分可以从主体部分和液晶部分折叠到完全打开状态的状态旋转的第一凸轮和第二凸轮的区域被设定为窄于铰链可以 旋转。

公开(公告)号：US09029588B2

公开(公告)日：2015-05-12

申请号：US14128325

申请日：2012-06-21

申请人： Kenji Yamawaki ,  Yukiteru Sugiyama ,  Hitoshi Sato

发明人： Kenji Yamawaki ,  Yukiteru Sugiyama ,  Hitoshi Sato

IPC分类号： A61K31/216 ,  A23F5/22 ,  B01J39/04 ,  B01J41/04 ,  B01J47/02 ,  B01J20/20 ,  A61K36/74 ,  C02F1/76 ,  A23L1/30 ,  C07C67/56 ,  C02F1/42

CPC分类号： A61K31/216 ,  A23F5/223 ,  A23L33/105 ,  A61K36/74 ,  B01J20/20 ,  B01J39/05 ,  B01J39/07 ,  B01J41/05 ,  B01J41/07 ,  B01J47/026 ,  C02F1/42 ,  C02F1/76 ,  C07C67/56 ,  C07C2601/14 ,  C07C69/732

摘要： Provided is a method for producing a chlorogenic acids composition having a reduced caffeine content and good taste and favor, capable of efficiently recovering high purity of chlorogenic acids from a chlorogenic acids-containing composition. The method for producing a purified chlorogenic acids composition comprises a step A of bringing a chlorogenic acids-containing composition into contact with a cation exchange resin; a step B of bringing the liquid obtained in the step A into contact with an anion exchange resin; and a step C of bringing an eluent into contact with the anion exchange resin after the step B.

摘要翻译： 本发明提供了能够有效地从含绿原酸的组合物中回收绿原酸的高纯度的，具有降低的咖啡因含量和良好的味道和有利性的绿原酸组合物的方法。 纯化的绿原酸组合物的制造方法包括使含绿原酸的组合物与阳离子交换树脂接触的工序A; 使步骤A中获得的液体与阴离子交换树脂接触的步骤B; 以及在步骤B之后使洗脱液与阴离子交换树脂接触的步骤C.

公开(公告)号：US20130168833A1

公开(公告)日：2013-07-04

申请号：US13776446

申请日：2013-02-25

申请人： Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L29/04 ,  H01L21/02

CPC分类号： H01L29/045 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02365 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

摘要翻译： 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。

公开(公告)号：US20120205625A1

公开(公告)日：2012-08-16

申请号：US13454321

申请日：2012-04-24

申请人： Michael Iza ,  Hitoshi Sato ,  Eu Jin Hwang ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Michael Iza ,  Hitoshi Sato ,  Eu Jin Hwang ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L33/04 ,  H01L33/12 ,  H01L33/32

摘要： A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0

摘要翻译： 在图案化衬底上的氮化物发光二极管，包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

公开(公告)号：US08193079B2

公开(公告)日：2012-06-05

申请号：US11673426

申请日：2007-02-09

申请人： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/04

CPC分类号： H01L21/2654 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

摘要： A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

摘要翻译： （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

公开(公告)号：US08148713B2

公开(公告)日：2012-04-03

申请号：US12419119

申请日：2009-04-06

申请人： Hitoshi Sato ,  Hirohiko Hirasawa ,  Roy B. Chung ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Hitoshi Sato ,  Hirohiko Hirasawa ,  Roy B. Chung ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L29/06

CPC分类号： H01L33/32 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/02 ,  H01L33/08 ,  Y10S977/755

摘要： A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

公开(公告)号：US07958602B2

公开(公告)日：2011-06-14

申请号：US12513664

申请日：2007-11-02

申请人： Katsuhito Nishizawa ,  Satoshi Mochizuki ,  Hitoshi Sato

发明人： Katsuhito Nishizawa ,  Satoshi Mochizuki ,  Hitoshi Sato

IPC分类号： E05D3/10

CPC分类号： H04M1/0222 ,  E05D3/10 ,  E05D11/1078 ,  E05Y2900/606 ,  G06F1/1616 ,  G06F1/1681 ,  Y10T16/54044 ,  Y10T16/5472

摘要： A hinge mechanism in which two housings are respectively connected to a first rotation shaft and a second rotation shaft that are arranged perpendicular to each other and the housing are arbitrarily openable about either one of the shafts is provided. In the hinge mechanism 1, at an end of a rotation shaft holding section (4) of a hinge housing (1), an end of an opening and closing shaft holding section (5) is integrated together in a state of being perpendicular to each other, the rotation shaft holding section (4) being formed in it a tubular shaft hole for supporting a rotation shaft section (3), and the opening and closing shaft holding section (5) being formed in it a tubular shaft hole for supporting an opening and closing shaft section (2), and the hinge housing (1) is substantially L-shaped as a whole. When the opening and closing shaft (2) is rotated, an opening and closing limiting outer peripheral surface enters an escape recess to cause a restraining end section to be restrained by the opening and closing limiting outer peripheral surface, and as a result, rotation of the rotation shaft section (3) is restrained. When the rotation shaft section (3) is rotated, a rotation limiting outer peripheral surface of the rotation shaft section (3) enters a portion of a restraining end surface to cause rotation of the opening and closing shaft (2) to be restrained.

摘要翻译： 一种铰链机构，其中两个壳体分别连接到彼此垂直布置的第一旋转轴和第二旋转轴，并且壳体围绕任一个轴可任意打开。 在铰链机构1中，在铰链壳体（1）的旋转轴保持部（4）的端部，开闭轴保持部（5）的端部与垂直于每个 另一方面，旋转轴保持部（4）形成有用于支撑旋转轴部（3）的管状轴孔，开闭轴保持部（5）形成有用于支撑旋转轴部 打开和关闭轴部分（2），并且铰链壳体（1）整体上基本上是L形的。 当打开和关闭轴（2）旋转时，开闭限制外周面进入逃逸凹部，使得限制端部被开闭限制外周面约束，结果是旋转 旋转轴部（3）被限制。 当旋转轴部（3）旋转时，旋转轴部（3）的旋转限制外周面进入限制端面的一部分，从而使开闭轴（2）的转动受到抑制。