公开(公告)号：US10683573B2

公开(公告)日：2020-06-16

申请号：US14936759

申请日：2015-11-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato ,  Shigehiro Miura ,  Hiroyuki Kikuchi ,  Katsuyoshi Aikawa

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/44 ,  C23C16/455

Abstract: A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.

公开(公告)号：US08932963B2

公开(公告)日：2015-01-13

申请号：US14475783

申请日：2014-09-03

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Hiroyuki Kikuchi ,  Takeshi Kumagai

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/4581 ,  C23C16/4405 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/50 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32825 ,  H01J2237/032 ,  H01J2237/201 ,  H01J2237/20214 ,  H01J2237/332 ,  H01L21/0206

Abstract: A film deposition method using a film deposition apparatus, includes: a film deposition process step in which at least a substrate is mounted on at least one of the circular concave portions and a film is deposited on the substrate; and a particle reducing process step performed before or after the film deposition process step, in which particles in the vacuum chamber are reduced without mounting substrates on the circular concave portions, the particle reducing process step including, a step of supplying a first gas to the vacuum chamber; a step of generating plasma from the first gas by supplying high frequency waves to a plasma generating device provided for the vacuum chamber; and a step of exposing the plurality of circular concave portions, on each of which a substrate is not mounted, to the plasma while rotating the susceptor.

Abstract translation: 使用成膜装置的成膜方法包括：成膜工序，在至少一个所述圆形凹部上至少安装有基板，在所述基板上淀积薄膜; 以及在成膜处理工序之前或之后进行的粒子还原工序，其中真空室中的颗粒在不将基板安装在圆形凹部上的情况下减少，所述颗粒还原工艺步骤包括：将第一气体供应到 真空室; 通过向设置在真空室中的等离子体发生装置供给高频波而从第一气体产生等离子体的步骤; 以及在旋转所述基座的同时，将其中未安装基板的所述多个圆形凹部暴露于所述等离子体的步骤。

公开(公告)号：US08853097B2

公开(公告)日：2014-10-07

申请号：US13743508

申请日：2013-01-17

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Hiroyuki Kikuchi ,  Takeshi Kumagai

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4581 ,  C23C16/4405 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/50 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32825 ,  H01J2237/032 ,  H01J2237/201 ,  H01J2237/20214 ,  H01J2237/332 ,  H01L21/0206

Abstract: A particle reducing method includes a step of supplying a first gas to a vacuum chamber in which a susceptor, formed by an insulating object and the surface of which is provided with a substrate mounting portion, is rotatably provided; a step of generating plasma from the first gas by supplying high frequency waves to a plasma generating device provided for the vacuum chamber; and a step of exposing the substrate mounting portion, on which a substrate is not mounted, to the plasma while rotating the susceptor.

Abstract translation: 一种粒子还原方法包括：将第一气体供给到真空室，其中由绝缘物体形成的基座和其表面设置有基板安装部分的基座可旋转地设置; 通过向设置在真空室中的等离子体发生装置供给高频波而从第一气体产生等离子体的步骤; 以及在旋转基座的同时将未安装基板的基板安装部暴露于等离子体的步骤。

公开(公告)号：US20140080320A1

公开(公告)日：2014-03-20

申请号：US14088028

申请日：2013-11-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuneyuki OKABE ,  Hitoshi Katoh ,  Junya Hiraka ,  Hiroyuki Kikuchi

IPC: H01L21/02 ,  C23C16/448

CPC classification number: H01L21/02186 ,  C23C16/409 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45531 ,  C23C16/52

Abstract: A method for using a system, which includes a film formation apparatus for forming a high-dielectric constant thin film on target substrates together and a gas supply apparatus for supplying a process gas. The method includes a preparatory stage of determining a set pressure range of pressure inside a vaporizing chamber for a liquid material cooled at a set temperature. The preparatory stage includes obtaining a first limit value of pressure at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, obtaining a second limit value of pressure at which vaporization of the liquid material starts being unstable and the pressure starts pulsating movement due to a decrease in the pressure, and determining the set pressure range to be defined by an upper limit lower than the first limit value and a lower limit higher than the second limit value.

Abstract translation: 一种使用系统的方法，其包括用于在目标基板上形成高介电常数薄膜的成膜装置和用于供给处理气体的气体供给装置。 该方法包括确定用于在设定温度下冷却的液体材料的蒸发室内的压力设定压力范围的准备阶段。 准备阶段包括获得液体材料的蒸发开始的压力的第一极限值由于压力的增加而被抑制，获得液体材料的蒸发开始的压力的第二极限值不稳定并且压力开始 由于压力降低导致的脉动运动，并且将设定压力范围确定为低于第一限制值的上限和比第二限制值高的下限。

公开(公告)号：US09865454B2

公开(公告)日：2018-01-09

申请号：US14522711

申请日：2014-10-24

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Hiroyuki Kikuchi ,  Masato Yonezawa ,  Jun Sato ,  Shigehiro Miura

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/458 ,  C23C16/505 ,  C23C16/455 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/02211 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32568 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31138

Abstract: A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward.

公开(公告)号：US09159548B2

公开(公告)日：2015-10-13

申请号：US14088028

申请日：2013-11-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuneyuki Okabe ,  Hitoshi Katoh ,  Junya Hiraka ,  Hiroyuki Kikuchi

IPC: C23C16/448 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/02186 ,  C23C16/409 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45531 ,  C23C16/52

Abstract: A method for using a system, which includes a film formation apparatus for forming a high-dielectric constant thin film on target substrates together and a gas supply apparatus for supplying a process gas. The method includes a preparatory stage of determining a set pressure range of pressure inside a vaporizing chamber for a liquid material cooled at a set temperature. The preparatory stage includes obtaining a first limit value of pressure at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, obtaining a second limit value of pressure at which vaporization of the liquid material starts being unstable and the pressure starts pulsating movement due to a decrease in the pressure, and determining the set pressure range to be defined by an upper limit lower than the first limit value and a lower limit higher than the second limit value.

Abstract translation: 一种使用系统的方法，其包括用于在目标基板上形成高介电常数薄膜的成膜装置和用于供给处理气体的气体供给装置。 该方法包括确定用于在设定温度下冷却的液体材料的蒸发室内的压力设定压力范围的准备阶段。 准备阶段包括获得液体材料的蒸发开始的压力的第一极限值由于压力的增加而被抑制，获得液体材料的蒸发开始的压力的第二极限值不稳定并且压力开始 由于压力降低导致的脉动运动，并且将设定压力范围确定为低于第一限制值的上限和比第二限制值高的下限。

公开(公告)号：US20140011372A1

公开(公告)日：2014-01-09

申请号：US13934677

申请日：2013-07-03

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Takeshi Kumagai ,  Tatsuya Tamura ,  Hiroyuki Kikuchi

IPC: H01L21/02

CPC classification number: H01L21/02263 ,  C23C16/402 ,  C23C16/4554 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: A film deposition method deposits a silicon oxide film on a substrate in which a concave portion is formed by supplying a silicon-containing gas to the substrate so that the silicon-containing gas is adsorbed on the substrate and by oxidizing the adsorbed silicon-containing gas with an oxidation gas. A gas-phase temperature in an atmosphere above the substrate to which the silicon-containing gas is supplied can be kept lower by an inactive gas supplied from a separation area that separates the silicon gas supply part and the oxidation gas supply part even if the substrate is heated to a temperature higher than a temperature that can decompose the silicon-containing gas. Accordingly, the silicon-containing gas can adsorb on the substrate without decomposing in the gas phase.

Abstract translation: 薄膜沉积方法通过向基板供给含硅气体而在其上形成凹部的基板上沉积氧化硅膜，使得含硅气体吸附在基板上，并且通过氧化吸附的含硅气体 与氧化气体。 通过从分离硅气体供给部和氧化气体供给部的分离区域供给的惰性气体，能够使供给含硅气体的基板上方的气氛中的气相温度降低，即使基板 被加热到高于可分解含硅气体的温度的温度。 因此，含硅气体可以吸附在基板上，而不会在气相中分解。

公开(公告)号：US12051566B2

公开(公告)日：2024-07-30

申请号：US17648436

申请日：2022-01-20

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Hiroyuki Kikuchi ,  Shinji Asari ,  Yuji Sawada

IPC: H01J37/32 ,  C23C16/50 ,  H01L21/687 ,  C23C16/458 ,  H01L21/02

CPC classification number: H01J37/32422 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/68771 ,  C23C16/4584 ,  H01J37/3211 ,  H01J37/3244 ,  H01J2237/20214 ,  H01J2237/332 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/68764

Abstract: A plasma processing apparatus includes a process chamber. A turntable is disposed in the process chamber and is configured to receive a substrate along a circumferential direction thereof. A process gas supply nozzle is configured to supply a process gas to the turntable. A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle. An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber.

公开(公告)号：US11901158B2

公开(公告)日：2024-02-13

申请号：US17241885

申请日：2021-04-27

Applicant: Tokyo Electron Limited

Inventor： Takeshi Kobayashi ,  Hiroyuki Kikuchi

IPC: H01L21/02 ,  C23C16/40 ,  H01J37/32 ,  H01L21/687 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01J37/32146 ,  C23C16/401 ,  C23C16/4584 ,  C23C16/45536 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/0228 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/68764 ,  H01J2237/20214 ,  H01J2237/332

Abstract: A plasma processing method includes providing a plasma processing apparatus including a rotary table that is rotatably provided in a vacuum container and disposes a plurality of substrates on an upper surface along a circumferential direction, a gas supply source that supplies a plasma processing gas to at least one of a plurality of processing areas separated by a separation area in the circumferential direction of the rotary table, and an antenna that is provided to face the upper surface of the rotary table and generates plasma in the at least one processing area. The plasma processing method further includes disposing the plurality of substrates on the rotary table, and supplying the plasma processing gas into the vacuum container and supplying a pulsed wave of RF power to the antenna while rotating the rotary table.

公开(公告)号：US09153433B2

公开(公告)日：2015-10-06

申请号：US14054932

申请日：2013-10-16

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Keiichi Tanaka ,  Hiroyuki Kikuchi

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  C23C16/24 ,  C23C16/455

CPC classification number: H01L21/02532 ,  C23C16/24 ,  C23C16/45527 ,  C23C16/45551 ,  H01L21/02381 ,  H01L21/0262

Abstract: A disclosed method of depositing a silicon film on a substrate mounted on a turntable and can pass by rotation through a first process area and a second process area, which are separately arranged along a peripheral direction in a cylindrical chamber set to have a first temperature capable of cutting a Si—H bond includes a molecular layer deposition step of supplying a Si2H6 gas set to have a second temperature less than the first temperature when the substrate passes through the first process area thereby forming a SiH3 molecular layer on a surface of the substrate, and a hydrogen desorption step of causing the substrate, on a surface of which the SiH3 molecular layer is formed, to pass through the second process area maintained to have the first temperature thereby cutting the Si—H bond and leaving only a silicon atomic layer on the surface of the substrate.

Abstract translation: 一种公开的将硅膜沉积在安装在转台上的基板上的方法，并且可以旋转地穿过第一处理区域和第二处理区域，该第一处理区域和第二处理区域沿圆周方向分开设置，该圆柱形室被设置为具有第一温度能力 切割Si-H键包括分子层沉积步骤，当基底通过第一处理区域时，提供Si2H6气体组合以具有小于第一温度的第二温度，从而在衬底的表面上形成SiH 3分子层 以及氢解吸步骤，使其表面上形成有SiH 3分子层的基板通过保持第一温度的第二工艺区域，从而切割Si-H键并仅留下硅原子层 在基板的表面上。