公开(公告)号：US11367611B2

公开(公告)日：2022-06-21

申请号：US16357292

申请日：2019-03-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuji Nishino ,  Jun Sato

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/40 ,  H01L21/02 ,  H01L21/687 ,  H01J37/32

Abstract: There is provided a film forming method of embedding a film in a groove formed in a front surface of a substrate, which includes: depositing an in-conformal film in the groove formed in the front surface of the substrate while forming a V-like cross-sectional shape in the groove; and embedding a conformal film in the groove by depositing the conformal film.

公开(公告)号：US11359279B2

公开(公告)日：2022-06-14

申请号：US16666621

申请日：2019-10-29

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Makoto Ishigo ,  Jun Sato

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/02

Abstract: A cleaning method for dry cleaning a susceptor disposed in a process chamber of a film deposition apparatus is provided. In the method, a protective member is placed on a substrate receiving region provided in the susceptor. A cleaning gas is supplied to the susceptor having the protective member placed on the substrate receiving region, thereby removing a film deposited on a surface of the susceptor by etching.

公开(公告)号：US11131023B2

公开(公告)日：2021-09-28

申请号：US15806681

申请日：2017-11-08

Applicant: Tokyo Electron Limited

Inventor： Shigehiro Miura ,  Jun Sato

IPC: H01L21/00 ,  C23C16/455 ,  C23C16/40 ,  C23C16/507 ,  C23C16/24 ,  H01L21/02 ,  H01L21/687

Abstract: A film deposition apparatus includes a process chamber and a turntable provided in the process chamber. The turntable includes a substrate receiving region to receive a substrate thereon and provided along a circumferential direction of the turntable. A source gas supply unit extending along a radial direction of the turntable is provided above the turntable with a first distance from the turntable such that the source gas supply unit covers an entire length of the substrate receiving region in the radial direction. An axial-side supplementary gas supply unit is provided in the vicinity of the source gas supply unit and above the turntable with a second distance from the turntable. The second distance is longer than the first distance. The axial-side supplementary gas supply unit covers a predetermined region of the substrate receiving region on the axial side in the radial direction of the turntable.

公开(公告)号：US09865454B2

公开(公告)日：2018-01-09

申请号：US14522711

申请日：2014-10-24

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Hiroyuki Kikuchi ,  Masato Yonezawa ,  Jun Sato ,  Shigehiro Miura

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/458 ,  C23C16/505 ,  C23C16/455 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/02211 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32568 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31138

Abstract: A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward.

公开(公告)号：US09607828B2

公开(公告)日：2017-03-28

申请号：US15049345

申请日：2016-02-22

Applicant: Tokyo Electron Limited

Inventor： Jun Sato ,  Shigehiro Miura

IPC: H01L21/469 ,  H01L21/02 ,  C23C16/24 ,  H01L29/66 ,  C23C16/02 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/45534 ,  C23C16/45551 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L29/66181

Abstract: A method of depositing a silicon-containing film using a film deposition apparatus is provided. The apparatus includes a turntable provided in a process chamber. In the method, a seed layer is formed on a surface of the substrate by supplying an aminosilane gas from the first process gas supplying unit for a predetermined period of time while rotating the turntable. A boron-containing gas is supplied from the first gas supplying unit to the surface of the substrate while rotating the turntable after finishing the step of forming the seed layer on the surface of the substrate. A silane-based gas is supplied from the second process gas supplying unit to the surface of the substrate while rotating the turntable and causing silicon atoms contained in the silane-based gas to bond with each other on the surface of the substrate by a catalytic action of the boron-containing gas.

公开(公告)号：US09376751B2

公开(公告)日：2016-06-28

申请号：US14614926

申请日：2015-02-05

Applicant: Tokyo Electron Limited

Inventor： Shigehiro Miura ,  Hitoshi Kato ,  Jun Sato ,  Takeshi Kobayashi ,  Masato Yonezawa

IPC: H01J37/32 ,  H01L21/302 ,  C23C16/455 ,  C23C16/52 ,  C23C16/458

CPC classification number: H01J37/32532 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/334

Abstract: An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.

Abstract translation: 一种等离子体处理装置的操作方法，包括：通过向电极提供预定输出的第一高频功率并产生等离子体，对工件进行等离子体处理; 以及当从所述等离子体处理装置的先前操作结束的时间间隔超过预定间隔时，在所述等离子体处理之前执行电荷存储处理，所述电荷存储处理包括向所述电极提供较低输出的第二高频功率 比预定输出。

公开(公告)号：US10217642B2

公开(公告)日：2019-02-26

申请号：US15333282

申请日：2016-10-25

Applicant: Tokyo Electron Limited

Inventor： Jun Sato ,  Shigehiro Miura

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/44 ,  H01L21/3065 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: A substrate processing apparatus includes a process chamber, and a turntable provided in the process chamber and including a substrate holding region formed in a top surface along a circumferential direction of the turntable. A surface area increasing region is provided in the top surface of the turntable around the substrate holding region and is configured to increase a surface area of the top surface of the turntable to an area larger than a surface area of a flat surface by including a concavo-convex pattern in its top surface. A process gas supply unit is configured to supply a process gas to the top surface of the turntable.

公开(公告)号：US09601318B2

公开(公告)日：2017-03-21

申请号：US14709656

申请日：2015-05-12

Applicant: Tokyo Electron Limited

Inventor： Shigehiro Miura ,  Hitoshi Kato ,  Jun Sato ,  Toshiyuki Nakatsubo ,  Hiroyuki Kikuchi

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/507 ,  H01L21/687 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/507 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32779 ,  H01J37/32834 ,  H01L21/0228 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/68764

Abstract: A plasma processing method is provided. In the method, a distribution of an amount of processing within a surface of a substrate by a plasma process performed on a film deposited on the substrate is obtained. Next, a flow speed of the plasma processing gas is adjusted by increasing the flow speed of the plasma processing gas supplied to a first area where the amount of processing is expected to be increased or by decreasing the flow speed of the plasma processing gas supplied to a second area where the amount of processing is expected to be decreased. Then, the plasma process is performed on the film deposited on the substrate by supplying the plasma processing gas having the adjusted flow speed into the predetermined plasma process area.

公开(公告)号：US09466476B2

公开(公告)日：2016-10-11

申请号：US14560232

申请日：2014-12-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun Sato ,  Pao-Hwa Chou

IPC: C23C16/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02164 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/402 ,  C23C16/45525 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/28061 ,  H01L21/28247

Abstract: A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten film or the tungsten oxide film is formed by heating the object to be processed and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film.

Abstract translation: 成膜方法包括在被处理物上形成钨膜或氧化钨膜，在钨膜或氧化钨膜上形成种子层，在种子层上形成氧化硅膜，其中种子 通过加热被处理物并将氨基硅烷系气体供给到钨膜或氧化钨膜的表面，形成在钨膜或氧化钨膜上形成的层。

公开(公告)号：US09447926B2

公开(公告)日：2016-09-20

申请号：US14176237

申请日：2014-02-10

Applicant: Tokyo Electron Limited

Inventor： Naomi Onodera ,  Kiyohiko Gokon ,  Jun Sato

IPC: C23C16/50 ,  C23C16/509 ,  F17D3/01 ,  C23C16/40 ,  C23C16/52 ,  H01L21/67

CPC classification number: F17D3/01 ,  C23C16/402 ,  C23C16/50 ,  C23C16/52 ,  H01L21/67109 ,  Y10T137/0324

Abstract: A plasma process method of processing an object to be processed by a plasma process while enabling cooling of an inside of a plasma apparatus by taking in and exhausting a gas to evacuate an atmosphere of the inside includes measuring a temperature of the atmosphere of the inside of the plasma process apparatus while the plasma is not generated; and stopping taking the gas into the inside of the plasma process apparatus during the plasma process in a case where the measured temperature is lower than a first preset threshold temperature when the atmosphere is evacuated at a preset volumetric flow rate.

Abstract translation: 一种等离子体处理方法，其通过吸入和排出气体以排出内部气氛，能够通过等离子体处理来处理待处理的物体，同时能够冷却等离子体装置的内部，包括测量内部的气氛的温度 等离子体处理装置，而不产生等离子体; 并且在以预定的体积流量抽空气体时，在测量温度低于第一预设阈值温度的情况下，在等离子体处理期间停止将气体进入等离子体处理装置的内部。