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公开(公告)号：US10692743B2
公开(公告)日：2020-06-23
申请号：US16010528
申请日：2018-06-18
发明人： Risako Miyoshi
IPC分类号： H01L21/67 , G05D11/13 , G05D16/20 , H01J37/32 , H01L21/683
摘要： In one embodiment, a gas supply line is connected to a chamber of a substrate processing apparatus. A vaporizer is connected to the gas supply line. A flow rate controller is connected to the gas supply line in parallel with the vaporizer through a secondary valve. A primary valve is provided on a primary side of the flow rate controller. A method of the embodiment includes supplying a processing gas to the chamber from the vaporizer through the gas supply line in a state in which the primary valve is closed, the secondary valve is opened, and an exhaust device is operated to set a pressure of the chamber to a predetermined pressure and determining a time-average value of a measurement value obtained by a pressure sensor of the flow rate controller while the supplying the processing gas is performed.
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2.发明授权公开(公告)号：US11231313B2
公开(公告)日：2022-01-25
申请号：US15954973
申请日：2018-04-17
发明人： Norihiko Amikura , Risako Miyoshi
摘要： A method of obtaining the output flow rate of the flow rate controller according to an aspect is provided. The method including a first step of outputting gas whose flow rate is adjusted according to a designated set flow rate from the flow rate controller, in a state where the diaphragm mechanism is opened; a second step of adjusting the diaphragm mechanism so that the pressure in the second pipe is the target pressure value, in a state where the output of gas from the flow rate controller is continued in the first step; and a third step of obtaining the output flow rate of the flow rate controller by using a pressure value and a temperature value in the tank, after the pressure in the second pipe is set to the target pressure value in the second step.
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公开(公告)号：US10274972B2
公开(公告)日：2019-04-30
申请号：US15263490
申请日：2016-09-13
发明人： Norihiko Amikura , Risako Miyoshi
摘要： A flow rate of a gas supplied into a processing vessel of a substrate processing apparatus is controlled according to a set flow rate of a first flow rate controller. The gas is also supplied into a second flow rate controller. When an output flow rate of the first flow rate controller is in a steady state, a first pressure measurement value of a first pressure gauge and a second pressure measurement value of a second pressure gauge of the second flow rate controller are obtained. A difference absolute value between the first pressure measurement value and a reference pressure value and a difference absolute value between the second pressure measurement value and a reference pressure value are calculated, and then, an average value of the difference absolute values is calculated. The difference absolute values and the average value are respectively compared with a first to third threshold value.
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公开(公告)号：US10031007B2
公开(公告)日：2018-07-24
申请号：US15262120
申请日：2016-09-12
发明人： Norihiko Amikura , Risako Miyoshi
IPC分类号： G01F1/42
摘要： A gas, whose flow rate is adjusted by a flow rate controller as a measurement target, is supplied into a processing vessel in a state that a third valve of the gas supply system provided at an upstream side of the processing vessel is opened. While the gas is continuously supplied, the third valve is closed after a pressure measurement value of a pressure gauge within a flow rate controller for pressure measurement is stabilized. After the third valve is closed, an output flow rate of the flow rate controller as the measurement target is calculated from a previously known volume of the gas supply system in which the gas supplied through the flow rate controller as the measurement target is collected and a rise rate of the pressure measurement value of the pressure gauge within the flow rate controller for pressure measurement with respect to time.
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公开(公告)号：US10788356B2
公开(公告)日：2020-09-29
申请号：US15702824
申请日：2017-09-13
发明人： Norihiko Amikura , Risako Miyoshi
摘要： A method according to an aspect includes a first step of connecting a reference device to the other end of a connecting pipe, a second step of supplying a gas from one flow controller into piping, a third step of acquiring measured values of a first pressure gauge and a first thermometer, a fourth step of supplying a portion of the gas in piping into a tank, a fifth step of acquiring measured values of the first pressure gauge and the first thermometer or measured values of a second pressure gauge and a second thermometer, and a sixth step of using a Boyle-Charles' law to calculate a volume of the piping on the basis of the measured values acquired in the third step, the measured values acquired in the fifth step, and a volume of a closed space including a space in the tank when the third valve is closed.
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公开(公告)号：US10692744B2
公开(公告)日：2020-06-23
申请号：US16010530
申请日：2018-06-18
发明人： Risako Miyoshi
IPC分类号： H01L21/67 , G05D11/13 , G05D16/20 , H01J37/32 , H01L21/683
摘要： In one embodiment, a vaporizer is connected to a chamber of a substrate processing apparatus through a gas supply line and a gas introduction port. An exhaust device is connected to the gas supply line. The substrate processing apparatus includes a pressure sensor that obtains a measurement value of a pressure of the gas supply line. A method according to the embodiment includes supplying a processing gas to the chamber from the vaporizer through the gas supply line, and monitoring a change of the measurement value obtained by the pressure sensor in a state in which supply of the processing gas to the gas supply line is stopped.
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公开(公告)号：US10168049B2
公开(公告)日：2019-01-01
申请号：US14699102
申请日：2015-04-29
摘要： Disclosed is a plasma processing apparatus in which a main control unit is capable of managing the processing situation of an exhaust gas in an exhaust gas processing unit through a dilution controller. The exhaust gas processing unit includes a detoxifying device connected to the outlet of a vacuum pump through an exhaust pipe, a dilution gas source connected to the exhaust pipe near the outlet of the vacuum pump through a dilution gas supply pipe, an MFC and an opening/closing valve installed at the middle of the dilution gas supply pipe, a gas sensor attached to the exhaust pipe on the downstream side of an end (node N) of the dilution gas supply pipe, and a dilution controller configured to control the MFC.
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公开(公告)号：US09240307B2
公开(公告)日：2016-01-19
申请号：US14161893
申请日：2014-01-23
发明人： Norihiko Amikura , Risako Miyoshi
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32091
摘要： Disclosed is a plasma processing apparatus including a mounting table within a processing container. The mounting table includes a lower electrode. A shower head constituting an upper electrode is provided above the mounting table. A gas inlet tube is provided above the shower head. The shower head includes a plurality of downwardly opened gas ejection holes, and first and second separate gas diffusion chambers on the gas ejection holes. The first gas diffusion chamber extends along a central axis that passes through a center of the mounting table. The second gas diffusion chamber extends circumferentially around the first gas diffusion chamber. The gas inlet tube includes a cylindrical first tube wall and a cylindrical second tube wall provided outside the first tube wall, and defines a first gas inlet path inside the first tube wall, and a second gas inlet path between the first and second tube walls.
摘要翻译： 公开了一种等离子体处理装置，其包括处理容器内的安装台。 安装台包括下电极。 构成上电极的花洒头设置在安装台的上方。 在淋浴喷头上方设有进气管。 喷淋头包括多个向下打开的气体喷射孔，以及气体喷射孔上的第一和第二分离的气体扩散室。 第一气体扩散室沿着穿过安装台的中心的中心轴线延伸。 第二气体扩散室围绕第一气体扩散室周向延伸。 气体入口管包括圆柱形第一管壁和设置在第一管壁外侧的圆柱形第二管壁，并且限定第一管壁内部的第一气体入口路径和在第一和第二管壁之间的第二气体入口路径。
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公开(公告)号：US10859426B2
公开(公告)日：2020-12-08
申请号：US16117630
申请日：2018-08-30
发明人： Jun Hirose , Norihiko Amikura , Risako Miyoshi , Shinobu Onodera
摘要： Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.
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公开(公告)号：US10424466B2
公开(公告)日：2019-09-24
申请号：US15680621
申请日：2017-08-18
发明人： Norihiko Amikura , Risako Miyoshi
摘要： The present disclosure provides a method for inspecting a shower plate of a plasma processing apparatus. In the plasma processing apparatus, a gas ejection unit includes a shower plate. A plurality of gas ejection holes are formed on the shower plate. This method includes (i) setting a flow rate of gas output from a first flow rate controller, and (ii) acquiring a measurement value indicating a pressure in a flow path inside a second pressure control type flow rate controller by using a pressure gauge of the second flow rate controller in a state where the gas output from the first flow rate controller at the set flow rate is supplied to the gas ejection unit and branched between the first flow rate controller and the gas ejection unit so as to be supplied to the flow path inside the second flow rate controller.
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