公开(公告)号：US20190237339A1

公开(公告)日：2019-08-01

申请号：US16377338

申请日：2019-04-08

Applicant: Tokyo Electron Limited

Inventor： Derek Bassett ,  Wallace P. Printz ,  Antonio L. P. Rotondaro ,  Teruomi Minami ,  Takahiro Furukawa

IPC: H01L21/311 ,  H01L21/67 ,  H01L49/02 ,  H01L21/02 ,  H01L21/4757 ,  H01L21/306

CPC classification number: H01L21/31111 ,  H01L21/02052 ,  H01L21/0214 ,  H01L21/02458 ,  H01L21/30608 ,  H01L21/47573 ,  H01L21/6708 ,  H01L21/67253 ,  H01L28/00

Abstract: Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

公开(公告)号：US10916440B2

公开(公告)日：2021-02-09

申请号：US16377338

申请日：2019-04-08

Applicant: Tokyo Electron Limited

Inventor： Derek Bassett ,  Wallace P. Printz ,  Antonio L. P. Rotondaro ,  Teruomi Minami ,  Takahiro Furukawa

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/4757 ,  H01L49/02

Abstract: Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

公开(公告)号：US10515820B2

公开(公告)日：2019-12-24

申请号：US15467973

申请日：2017-03-23

Applicant: Tokyo Electron Limited

Inventor： Derek Bassett ,  Wallace P. Printz ,  Antonio L. P. Rotondaro ,  Teruomi Minami ,  Takahiro Furukawa

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/4757 ,  H01L21/306 ,  H01L21/67 ,  H01L49/02

Abstract: Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

公开(公告)号：US09321085B2

公开(公告)日：2016-04-26

申请号：US13687142

申请日：2012-11-28

Applicant: Tokyo Electron Limited

Inventor： Teruomi Minami ,  Satoru Tanaka ,  Tatsuya Nagamatsu ,  Hiroyuki Suzuki ,  Yosuke Kawabuchi ,  Tsukasa Hirayama ,  Katsufumi Matsuki

IPC: B08B3/04 ,  B08B7/04 ,  H01L21/67

CPC classification number: B08B3/04 ,  H01L21/67034

Abstract: A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.

Abstract translation: 在基板上进行化学液体处理。 然后，进行向基板供给冲洗液的冲洗处理。 此后，在旋转基板的同时进行干燥基板的干燥处理。 干燥过程包括以第一转速旋转衬底的第一干燥过程; 第二干燥处理，其在第一干燥处理之后将基板的转速降低到低于第一转速的第二转速。 在第二干燥过程中，冲洗液和干燥溶液在产生制动效果的同时进行搅拌和取代。 在第三干燥处理中，在第二次干燥处理之后，基板的转速从第二转速增加到第三转速。 此后，在第四干燥过程中，通过旋转基板将基板上的干燥溶液散开。

公开(公告)号：US20190355574A1

公开(公告)日：2019-11-21

申请号：US16411404

申请日：2019-05-14

Applicant: Tokyo Electron Limited

Inventor： Itaru Kanno ,  Hiromi Kiyose ,  Gentaro Goshi ,  Naohiko Hamamura ,  Takuro Masuzumi ,  Kenji Sekiguchi ,  Satoru Tanaka ,  Teruomi Minami

IPC: H01L21/02 ,  H01L21/67 ,  F26B3/28

Abstract: A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

公开(公告)号：US20170301534A1

公开(公告)日：2017-10-19

申请号：US15518013

申请日：2015-10-20

Applicant: Tokyo Electron Limited

Inventor： Mitsunori Nakamori ,  Teruomi Minami ,  Kotaro Ooishi ,  Jun Nonaka

IPC: H01L21/02 ,  B08B3/10 ,  B08B3/04 ,  B08B3/08 ,  H01L21/687 ,  H01L21/67

Abstract: This liquid treatment method for substrates involves performing: a liquid treatment step for liquid-treating a substrate with a treatment liquid; a rinse treatment step for rinsing the liquid-treated substrate with a rinsing liquid; a water-repellency treatment step for subjecting the rinsed substrate to a water-repellency treatment using a water-repellency-imparting solution; next, a substitution treatment step for subjecting the substrate subjected to the water-repellency treatment to a substitution treatment acceleration liquid; a cleaning treatment step for cleaning the substrate subjected to the water-repellency treatment by using a cleaning solution; and thereafter, a drying treatment step for substituting the cleaning solution with a drying solution having a higher volatility than that of the cleaning solution, and removing the drying solution from the substrate. Thus, it is possible to prevent pattern collapse during the drying treatment, and to decrease particles caused by watermarks.

公开(公告)号：US20160111303A1

公开(公告)日：2016-04-21

申请号：US14880462

申请日：2015-10-12

Applicant: Tokyo Electron Limited

Inventor： Mitsunori Nakamori ,  Junichi Kitano ,  Teruomi Minami

IPC: H01L21/67 ,  H01L21/02 ,  B08B3/08

CPC classification number: H01L21/67051 ,  B08B3/08 ,  H01L21/02057 ,  H01L21/67028

Abstract: Disclosed is a substrate liquid processing apparatus. The apparatus includes: a pure water supply unit (a rinse liquid supply unit) configured to supply pure water to a substrate; and a drying liquid supply unit configured to supply a drying liquid having a higher volatility than the pure water to the substrate. The substrate liquid processing apparatus is used to supply the drying liquid having the higher volatility, of which a part contains a silicon-based organic compound, to the substrate, from the drying liquid supply unit.

Abstract translation: 公开了一种基板液体处理装置。 该装置包括：净水供给单元（冲洗液供给单元），其构造成向基板供给纯水; 以及干燥液供给单元，其构造成向所述基板供给比所述纯水高的挥发性的干燥液。 基板液体处理装置用于从干燥液体供应单元向基板供应具有较高挥发性的干燥液体，其中部分含有硅基有机化合物。

公开(公告)号：US11869777B2

公开(公告)日：2024-01-09

申请号：US17030488

申请日：2020-09-24

Applicant: Tokyo Electron Limited

Inventor： Fumihiro Kamimura ,  Masatoshi Kasahara ,  Teruomi Minami ,  Ikuo Sunaka

IPC: H01L21/67 ,  B08B3/04 ,  B08B7/00 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67051 ,  B08B3/04 ,  B08B7/0014 ,  H01L21/02057 ,  H01L21/67248 ,  H01L21/68764

Abstract: A substrate processing method includes: increasing a temperature of a substrate by heating the substrate; after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on a first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed; after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the second rotational speed; and after the processing the first surface of the substrate, decreasing the temperature of the substrate.

公开(公告)号：US11201050B2

公开(公告)日：2021-12-14

申请号：US16411404

申请日：2019-05-14

Applicant: Tokyo Electron Limited

Inventor： Itaru Kanno ,  Hiromi Kiyose ,  Gentaro Goshi ,  Naohiko Hamamura ,  Takuro Masuzumi ,  Kenji Sekiguchi ,  Satoru Tanaka ,  Teruomi Minami

IPC: F26B3/34 ,  H01L21/02 ,  F26B3/28 ,  H01L21/67

Abstract: A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

公开(公告)号：US20170287726A1

公开(公告)日：2017-10-05

申请号：US15467973

申请日：2017-03-23

Applicant: Tokyo Electron Limited

Inventor： Derek Bassett ,  Wallace P. Printz ,  Antonio L.P. Rotondaro ,  Teruomi Minami ,  Takahiro Furukawa

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/306

CPC classification number: H01L21/31111 ,  H01L21/02052 ,  H01L21/0214 ,  H01L21/02458 ,  H01L21/30608 ,  H01L21/47573 ,  H01L21/6708 ,  H01L21/67253 ,  H01L28/00

Abstract: Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.