公开(公告)号：US5821909A

公开(公告)日：1998-10-13

申请号：US700587

申请日：1996-08-14

申请人： Tom Dang-Hsing Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

发明人： Tom Dang-Hsing Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

IPC分类号： G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/24 ,  G11C16/02

CPC分类号： G11C16/12 ,  G11C16/10 ,  G11C16/16 ,  G11C16/24

摘要： A circuit for speeding up the pre-programming of floating gate storage transistors such as FLASH EPROMS, and particularly speeding up the pre-programming of a block or array of floating gate storage transistors includes a controllable voltage source that supplies gate programming potential across the control gate and source of the FLASH EPROM transistor cells to be programmed. A control circuit is provided that controls the voltage source to vary the gate programming potential during a programming interval as a function of time in order to decrease the time required for a given amount of charge movement to program the selected floating gate transistors. The wordline voltages are varied, while the source voltage is held constant. By starting at a lower wordline voltage, and increasing during the programming interval to a high wordline voltage, the programming speed is increased, and the high final turn-on threshold voltage for the programmed floating gate storage transistors is achieved. In addition, in order to speed up pre-programming, a programming potential is applied to four wordlines in parallel during a single programming interval. Further, the load on cells being programmed is adjusted to improve programming speed.

公开(公告)号：US6166956A

公开(公告)日：2000-12-26

申请号：US303153

申请日：1999-04-30

申请人： Tom Dang-Hsing Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

发明人： Tom Dang-Hsing Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

IPC分类号： G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/24 ,  G11C7/00

CPC分类号： G11C16/12 ,  G11C16/10 ,  G11C16/16 ,  G11C16/24

摘要： A circuit for speeding up the pre-programming of floating gate storage transistors such as FLASH EPROMS, and particularly speeding up the pre-programming of a block or array of floating gate storage transistors includes a controllable voltage source that supplies gate programming potential across the control gate and source of the FLASH EPROM transistor cells to be programmed. A control circuit is provided that controls the voltage source to vary the gate programming potential during a programming interval as a function of time in order to decrease the time required for a given amount of charge movement to program the selected floating gate transistors. The wordline voltages are varied, while the source voltage is held constant. By starting at a lower wordline voltage, and increasing during the programming interval to a high wordline voltage, the programming speed is increased, and the high final turn-on threshold voltage for the programmed floating gate storage transistors is achieved. In addition, in order to speed up pre-programming, a programming potential is applied to four wordlines in parallel during a single programming interval. Further, the load on cells being programmed is adjusted to improve programming speed.

摘要翻译： 用于加速浮动存储晶体管（例如FLASH EPROMS）的预编程的电路，并且特别是加速块或阵列的浮置栅极存储晶体管的预编程包括可控电压源，其提供跨控制的栅极编程电位 要编程的FLASH EPROM晶体管单元的栅极和源极。 提供控制电路，其控制电压源以在编程间隔期间作为时间的函数改变栅极编程电位，以便减少给定量的电荷移动对所选择的浮置栅极晶体管进行编程所需的时间。 字线电压是变化的，而源电压保持恒定。 通过以较低的字线电压开始，并且在编程间隔期间增加到高字线电压，编程速度增加，并且实现了编程浮栅存储晶体管的高最终导通阈值电压。 另外，为了加速预编程，在单个编程间隔期间，编程电位并行应用于四个字线。 此外，调整正在编程的单元上的负载以提高编程速度。

公开(公告)号：US5563823A

公开(公告)日：1996-10-08

申请号：US393243

申请日：1995-02-23

申请人： Tom D. Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

发明人： Tom D. Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

IPC分类号： G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/24 ,  G11C7/00

CPC分类号： G11C16/12 ,  G11C16/10 ,  G11C16/16 ,  G11C16/24

摘要： A circuit for speeding up the pre-programming of floating gate storage transistors such as FLASH EPROMS, and particularly speeding up the pre-programming of a block or array of floating gate storage transistors includes a controllable voltage source that supplies gate programming potential across the control gate and source of the FLASH EPROM transistor cells to be programmed. A control circuit is provided that controls the voltage source to vary the gate programming potential during a programming interval as a function of time in order to decrease the time required for a given amount of charge movement to program the selected floating gate transistors. The wordline voltages are varied, while the source voltage is held constant. By starting at a lower wordline voltage, and increasing during the programming interval to a high wordline voltage, the programming speed is increased, and the high final turn-on threshold voltage for the programmed floating gate storage transistors is achieved. In addition, in order to speed up pre-programming, a programming potential is applied to four wordlines in parallel during a single programming interval. Further, the load on cells being programmed is adjusted to improve programming speed.

摘要翻译： 用于加速浮动存储晶体管（例如FLASH EPROMS）的预编程的电路，并且特别是加速块或阵列的浮置栅极存储晶体管的预编程包括可控电压源，其提供跨控制的栅极编程电位 要编程的FLASH EPROM晶体管单元的栅极和源极。 提供控制电路，其控制电压源以在编程间隔期间作为时间的函数改变栅极编程电位，以便减少给定量的电荷移动对所选择的浮置栅极晶体管进行编程所需的时间。 字线电压是变化的，而源电压保持恒定。 通过以较低的字线电压开始，并且在编程间隔期间增加到高字线电压，编程速度增加，并且实现了编程浮栅存储晶体管的高最终导通阈值电压。 另外，为了加速预编程，在单个编程间隔期间，编程电位并行应用于四个字线。 此外，调整正在编程的单元上的负载以提高编程速度。

公开(公告)号：US5539688A

公开(公告)日：1996-07-23

申请号：US444313

申请日：1995-05-18

申请人： Tom D. Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

发明人： Tom D. Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

IPC分类号： G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/24 ,  G11C16/06

CPC分类号： G11C16/12 ,  G11C16/10 ,  G11C16/16 ,  G11C16/24

摘要： A circuit for speeding up the pre-programming of floating gate storage transistors such as FLASH EPROMS, and particularly speeding up the pre-programming of a block or array of floating gate storage transistors includes a controllable voltage source that supplies gate programming potential across the control gate and source of the FLASH EPROM transistor cells to be programmed. A control circuit is provided that controls the voltage source to vary the gate programming potential during a programming interval as a function of time in order to decrease the time required for a given amount of charge movement to program the selected floating gate transistors. The wordline voltages are varied, while the source voltage is held constant. By starting at a lower wordline voltage, and increasing during the programming interval to a high wordline voltage, the programming speed is increased, and the high final turn-on threshold voltage for the programmed floating gate storage transistors is achieved. In addition, in order to speed up pre-programming, a programming potential is applied to four wordlines in parallel during a single programming interval. Further, the load on cells being programmed is adjusted to improve programming speed.

摘要翻译： 用于加速浮动存储晶体管（例如FLASH EPROMS）的预编程的电路，并且特别是加速块或阵列的浮置栅极存储晶体管的预编程包括可控电压源，其提供跨控制的栅极编程电位 要编程的FLASH EPROM晶体管单元的栅极和源极。 提供控制电路，其控制电压源以在编程间隔期间作为时间的函数改变栅极编程电位，以便减少给定量的电荷移动对所选择的浮置栅极晶体管进行编程所需的时间。 字线电压是变化的，而源电压保持恒定。 通过以较低的字线电压开始，并且在编程间隔期间增加到高字线电压，编程速度增加，并且实现了编程浮栅存储晶体管的高最终导通阈值电压。 另外，为了加速预编程，在单个编程间隔期间，编程电位并行应用于四个字线。 此外，调整正在编程的单元上的负载以提高编程速度。

公开(公告)号：US5563822A

公开(公告)日：1996-10-08

申请号：US444315

申请日：1995-05-18

申请人： Tom D. Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

发明人： Tom D. Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

IPC分类号： G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/24 ,  G11C13/00

CPC分类号： G11C16/12 ,  G11C16/10 ,  G11C16/16 ,  G11C16/24

摘要： A circuit for speeding up the pre-programming of floating gate storage transistors such as FLASH EPROMS, and particularly speeding up the pre-programming of a block or array of floating gate storage transistors includes a controllable voltage source that supplies gate programming potential across the control gate and source of the FLASH EPROM transistor cells to be programmed. A control circuit is provided that controls the voltage source to vary the gate programming potential during a programming interval as a function of time in order to decrease the time required for a given amount of charge movement to program the selected floating gate transistors. The wordline voltages are varied, while the source voltage is held constant. By starting at a lower wordline voltage, and increasing during the programming interval to a high wordline voltage, the programming speed is increased, and the high final turn-on threshold voltage for the programmed floating gate storage transistors is achieved. In addition, in order to speed up pre-programming, a programming potential is applied to four wordlines in parallel during a single programming interval. Further, the load on cells being programmed is adjusted to improve programming speed.

公开(公告)号：US5615153A

公开(公告)日：1997-03-25

申请号：US444314

申请日：1995-05-18

申请人： Tom D. Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

发明人： Tom D. Yiu ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Tien-Ler Lin ,  Fuchia Shone

IPC分类号： G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/24 ,  G11C16/04

CPC分类号： G11C16/12 ,  G11C16/10 ,  G11C16/16 ,  G11C16/24

摘要： A circuit for speeding up the pre-programming of floating gate storage transistors such as FLASH EPROMS, and particularly speeding up the pre-programming of a block or array of floating gate storage transistors includes a controllable voltage source that supplies gate programming potential across the control gate and source of the FLASH EPROM transistor cells to be programmed. A control circuit is provided that controls the voltage source to vary the gate programming potential during a programming interval as a function of time in order to decrease the time required for a given amount of charge movement to program the selected floating gate transistors. The wordline voltages are varied, while the source voltage is held constant. By starting at a lower wordline voltage, and increasing during the programming interval to a high wordline voltage, the programming speed is increased, and the high final turn-on threshold voltage for the programmed floating gate storage transistors is achieved. In addition, in order to speed up pre-programming, a programming potential is applied to four wordlines in parallel during a single programming interval. Further, the load on cells being programmed is adjusted to improve programming speed.

摘要翻译： 用于加速浮动存储晶体管（例如FLASH EPROMS）的预编程的电路，并且特别是加速块或阵列的浮置栅极存储晶体管的预编程包括可控电压源，其提供跨控制的栅极编程电位 要编程的FLASH EPROM晶体管单元的栅极和源极。 提供控制电路，其控制电压源以在编程间隔期间作为时间的函数改变栅极编程电位，以便减少给定量的电荷移动对所选择的浮置栅极晶体管进行编程所需的时间。 字线电压是变化的，而源电压保持恒定。 通过以较低的字线电压开始，并且在编程间隔期间增加到高字线电压，编程速度增加，并且实现了编程浮栅存储晶体管的高最终导通阈值电压。 另外，为了加速预编程，在单个编程间隔期间，编程电位并行应用于四个字线。 此外，调整正在编程的单元上的负载以提高编程速度。

公开(公告)号：US5414664A

公开(公告)日：1995-05-09

申请号：US108662

申请日：1993-08-31

申请人： Tien-Ler Lin ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Gilbert Sung

发明人： Tien-Ler Lin ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Gilbert Sung

IPC分类号： G11C16/16 ,  G11C16/34 ,  G11C7/00 ,  G11C16/00

CPC分类号： G11C16/3445 ,  G11C16/16 ,  G11C16/344

摘要： A FLASH EPROM device includes a memory array organized into a plurality of blocks of memory cells. An energizing circuit applies energizing voltages to the blocks of memory cells to read and program addressed cells, and to erase selected blocks or the whole memory array. An erase verify circuit separately verifies erasure of blocks in the plurality of block memory cells. Control logic controls the energizing circuit to re-erase blocks which fail erase verify. The control logic includes a plurality of block erase flags which correspond to respective blocks of memory cells in the array. The erase verify is responsive to the block erase flags to verify only those blocks having a set block erase flag. If the block passes erase verify, then the block erase flag is reset. Only those blocks having a set block erase flag after the erase verify operation are re-erased. To support this operation, the circuit also includes the capability of erasing only a block of the memory array at a time.

摘要翻译： PCT No.PCT / US93 / 05146 Sec。 371日期：1993年8月31日 102（e）日期1993年8月31日PCT PCT日期为1993年5月28日。FLASH EPROM装置包括组织成多个存储单元块的存储器阵列。 激励电路向存储器单元的块施加通电电压以读取和编程寻址单元，并擦除所选择的块或整个存储器阵列。 擦除验证电路分别验证多个块存储器单元中的块的擦除。 控制逻辑控制通电电路重新擦除擦除验证失败的块。 控制逻辑包括与阵列中的存储器单元的相应块对应的多个块擦除标志。 擦除验证响应于块擦除标志以仅验证具有设置块擦除标志的那些块。 如果块通过擦除验证，则块擦除标志被复位。 在擦除验证操作之后，仅具有设置块擦除标志的块被重新擦除。 为了支持这种操作，该电路还包括一次仅擦除存储器阵列的能力。

公开(公告)号：US5596530A

公开(公告)日：1997-01-21

申请号：US383726

申请日：1995-02-02

申请人： Tien-Ler Lin ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Gilbert Sung

发明人： Tien-Ler Lin ,  Ray L. Wan ,  Ling-Wen Hsiao ,  Gilbert Sung

IPC分类号： G11C16/16 ,  G11C16/34 ,  G11C7/00 ,  G11C16/00

CPC分类号： G11C16/3445 ,  G11C16/16 ,  G11C16/344

摘要： A FLASH EPROM device includes a memory array organized into a plurality of blocks of memory cells. An energizing circuit applies energizing voltages to the blocks of memory cells to read and program addressed cells, and to erase selected blocks or the whole memory array. An erase verify circuit separately verifies erasure of blocks in the plurality of block memory cells. Control logic controls the energizing circuit to re-erase blocks which fail erase verify. The control logic includes a plurality of block erase flags which correspond to respective blocks of memory cells in the array. The erase verify is responsive to the block erase flags to verify only those blocks having a set block erase flag. If the block passes erase verify, then the block erase flag is reset. Only those blocks having a set block erase flag after the erase verify operation are re-erased. To support this operation, the circuit also includes the capability of erasing only a block of the memory array at a time.

摘要翻译： FLASH EPROM装置包括组织成多个存储单元块的存储器阵列。 激励电路向存储器单元的块施加通电电压以读取和编程寻址单元，并擦除所选择的块或整个存储器阵列。 擦除验证电路分别验证多个块存储器单元中的块的擦除。 控制逻辑控制通电电路重新擦除擦除验证失败的块。 控制逻辑包括与阵列中的存储器单元的相应块对应的多个块擦除标志。 擦除验证响应于块擦除标志以仅验证具有设置块擦除标志的那些块。 如果块通过擦除验证，则块擦除标志被复位。 在擦除验证操作之后，仅具有设置块擦除标志的块被重新擦除。 为了支持这种操作，该电路还包括一次仅擦除存储器阵列的能力。