Plasma doping method and apparatus thereof
    2.
    发明授权
    Plasma doping method and apparatus thereof 有权
    等离子体掺杂方法及其装置

    公开(公告)号:US08450819B2

    公开(公告)日:2013-05-28

    申请号:US13291186

    申请日:2011-11-08

    IPC分类号: H01L27/14 H01L21/44

    摘要: In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.

    摘要翻译: 在等离子体焰炬单元中,具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部,并且在其周边设置有黄铜块。 当气体被供应到圆柱形腔室中时,向导体杆供应高频电力,并且在圆柱形腔室中产生等离子体,使得等离子体照射基材。

    Plasma processing apparatus and plasma processing method
    3.
    发明授权
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号:US08703613B2

    公开(公告)日:2014-04-22

    申请号:US13582557

    申请日:2011-05-11

    IPC分类号: H01L21/44 H01L27/14

    摘要: A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.

    摘要翻译: 基材放置在基材放置台的基材放置面上。 电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室,该圆柱形腔体由绝缘材料构成,并设置有矩形裂缝状等离子体喷射口,并且盖住气缸的相对端部,气体喷射口将气体供应到 圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。 通过向螺线管线圈提供高频电力的高频电源,在圆筒形室中产生等离子体,等离子体从等离子体喷射口发射到基体材料。 在相对移动等离子体焰炬单元和基材放置台的同时,可以对基材表面进行热处理。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    5.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
    等离子体加工设备和等离子体处理方法

    公开(公告)号:US20120325777A1

    公开(公告)日:2012-12-27

    申请号:US13582557

    申请日:2011-05-11

    IPC分类号: H01L21/465 B44C1/22 C23C16/50

    摘要: A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.

    摘要翻译: 基材放置在基材放置台的基材放置面上。 电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室,该圆柱形腔体由绝缘材料构成,并设置有矩形裂缝状等离子体喷射口,并且盖住气缸的相对端部,气体喷射口将气体供应到 圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。 通过向螺线管线圈提供高频电力的高频电源,在圆筒形室中产生等离子体,等离子体从等离子体喷射口发射到基体材料。 在相对移动等离子体焰炬单元和基材放置台的同时,可以对基材表面进行热处理。

    PLASMA DOPING METHOD AND APPARATUS THEREOF
    6.
    发明申请
    PLASMA DOPING METHOD AND APPARATUS THEREOF 有权
    等离子喷涂方法及其设备

    公开(公告)号:US20120115317A1

    公开(公告)日:2012-05-10

    申请号:US13291186

    申请日:2011-11-08

    摘要: In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.

    摘要翻译: 在等离子体焰炬单元中,具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部,并且在其周边设置有黄铜块。 当气体被供应到圆柱形腔室中时,向导体杆供应高频电力,并且在圆柱形腔室中产生等离子体,使得等离子体照射基材。

    Plasma processing method and apparatus
    7.
    发明授权
    Plasma processing method and apparatus 失效
    等离子体处理方法和装置

    公开(公告)号:US07465407B2

    公开(公告)日:2008-12-16

    申请号:US10649670

    申请日:2003-08-28

    IPC分类号: C23C16/00

    摘要: In a plasma processing method for supplying an electric power to a first electrode, making a first electrode have a ground potential, or making a first electrode have a floating potential while supplying gas to a plasma source arranged in a vicinity of an object to be processed at a pressure in a vicinity of an atmospheric pressure. The method includes processing a part of the object to be processed with a plasma in a state where an area of a surface of a potentially controlled second electrode, arranged in a position opposite to the plasma source via the object to be processed, is made superposed on the object to be processed smaller than an area of a surface of the plasma source superposed on the object to be processed.

    摘要翻译: 在用于向第一电极供给电力的等离子体处理方法中,使第一电极具有接地电位,或者使第一电极具有浮置电位,同时向布置在待处理物体附近的等离子体源供给气体 在大气压力附近的压力下。 该方法包括在等离子体处理待处理物体的一部分的状态,其中经由待处理物体布置在与等离子体源相反的位置的潜在受控的第二电极的表面的面积被叠加 对待处理的物体小于叠加在待处理物体上的等离子体源的表面的面积。

    Plasma display panel and process for producing the plasma display panel
    9.
    发明申请
    Plasma display panel and process for producing the plasma display panel 失效
    等离子显示面板和等离子体显示面板的制造工艺

    公开(公告)号:US20070232181A1

    公开(公告)日:2007-10-04

    申请号:US11802862

    申请日:2007-05-25

    IPC分类号: H01J9/00

    摘要: A fluorine-containing precoating is formed to cover a phosphor particle by, for example, a physical vapor deposition of a fluoride. Then, a fluorine-containing coating covering the phosphor particle is formed by supplying fluorine into the precoating. This obtained phosphor particle with the coating is applied in the form of a paste to a substrate on each electrode between two adjacent ribs to form a phosphor layer including phosphor particles between the ribs on the substrate. The substrate is positioned with respect to another substrate having electrodes thereon to form discharge spaces between the substrates. The discharge spaces are filled with a discharge gas to produce a plasma display panel.

    摘要翻译: 通过例如氟化物的物理气相沉积,形成含氟预涂层以覆盖磷光体颗粒。 然后,通过向预涂层中供给氟而形成覆盖荧光体颗粒的含氟涂层。 将得到的具有涂层的荧光体颗粒以膏状施加到两个相邻肋之间的每个电极上的基板上,以在基板上的肋之间形成包括磷光体颗粒的荧光体层。 基板相对于其上具有电极的另一基板定位,以在基板之间形成放电空间。 放电空间填充有放电气体以产生等离子体显示面板。

    Plasma processing method and apparatus
    10.
    发明授权
    Plasma processing method and apparatus 失效
    等离子体处理方法和装置

    公开(公告)号:US06830653B2

    公开(公告)日:2004-12-14

    申请号:US10207183

    申请日:2002-07-30

    IPC分类号: C23C1600

    摘要: A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the antenna cover by the slit cover, and fixing the slit cover to a wall surface of the vacuum chamber.

    摘要翻译: 一种用于在真空室中产生等离子体并处理放置在基板电极上的基板的等离子体处理方法,所述等离子体是通过将频率为50MHz至3GHz的高频电源提供给与基板电极相对设置的天线而产生的 通过向真空室供给气体并排出真空室的内部,真空室的内部被控制到规定的压力,该方法包括夹在天线和真空室之间的电介质板,天线和 电介质板突出到真空室中,通过设置在天线和真空室之间的环形和凹槽来控制基板上的等离子体分布,并且通过使天线盖固定的状态来处理基板 的狭缝和天线覆盖有天线盖,使狭缝的底面覆盖有狭缝c 通过狭缝盖支撑天线罩,并将狭缝盖固定到真空室的壁面。