公开(公告)号：US07387989B2

公开(公告)日：2008-06-17

申请号：US11148239

申请日：2005-06-09

申请人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： H01L21/302

CPC分类号： C30B33/00 ,  Y10T428/21

摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

摘要翻译： 在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时， 在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。 此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中， 通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积） 至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。 此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积 电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗 提供了可以获得AlN衬底的方法。

公开(公告)号：US20080299375A1

公开(公告)日：2008-12-04

申请号：US12149776

申请日：2008-05-08

申请人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： C01B21/072 ,  B32B9/00

CPC分类号： C30B33/00 ,  Y10T428/21

摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

摘要翻译： 当AlxGayIn1-x-yN基板的直径为2英寸时，AlxGayIn1-x-yN基板在AlxGayIn1-x-yN基板的表面上具有至少0.2μm的粒度的粒子的数目为20个以上的Al x Ga y In 1-x-y N基板 以及可以获得Al x Ga y In 1-x-y N基板的清洗方法。 此外，AlxGayIn1-x-yN衬底，其中，通过X射线光电子能谱法测定Al x Ga y In 1-x-y N衬底的表面的光电子光谱，检测角度为10°时，C1s电子的峰面积之比 并且N1s电子的峰面积（C1s电子峰面积/ N1s电子峰面积）为3以下，提供了可以获得Al x Ga y In 1-x-y N基板的清洗方法。 另外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al2s电子的峰面积与N1s电子的峰面积之比 （Al 2 S电子峰面积/ N1s电子峰面积）为0.65以下，设置可获得AlN基板的清洗方法。

公开(公告)号：US20060003134A1

公开(公告)日：2006-01-05

申请号：US11148239

申请日：2005-06-09

申请人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： B32B9/00

CPC分类号： C30B33/00 ,  Y10T428/21

摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

摘要翻译： 在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时， 在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。 此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中， 通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积） 至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。 此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积 电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗 提供了可以获得AlN衬底的方法。

公开(公告)号：US20090032907A1

公开(公告)日：2009-02-05

申请号：US11919705

申请日：2006-08-17

申请人： Tomoki Uemura ,  Shinsuke Fujiwara ,  Takuji Okahisa ,  Ryu Hirota ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Shinsuke Fujiwara ,  Takuji Okahisa ,  Ryu Hirota ,  Hideaki Nakahata

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  C30B29/406

摘要： It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.

摘要翻译： 看来，通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而，这种常规方法具有问题 因为当加热器（5）和（6）加热时，石英反应管（1）熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN（0≤x≤1） ）晶体（12）通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板（7）的表面上生长GaxIn1-xN（0 <= x <= 1）晶体（12） 在石英反应管（1）中，在GaxIn1-xN（0 <= x <= 1）晶体（12）生长期间，石英反应管（1）被外部加热， 基底基板（7）被单独加热。

公开(公告)号：US20090194848A1

公开(公告)日：2009-08-06

申请号：US12298332

申请日：2007-04-24

申请人： Tomoki Uemura ,  Takashi Sakurada ,  shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Takashi Sakurada ,  shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/02623 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.

摘要翻译： 提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法， 晶种基片。 在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或 反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。 这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

公开(公告)号：US06661152B2

公开(公告)日：2003-12-09

申请号：US10264264

申请日：2002-10-04

申请人： Keiji Ishibashi ,  Takahiro Imai ,  Tomoki Uemura ,  Daichi Kawaguchi ,  Hideaki Nakahata ,  Satoshi Fujii

发明人： Keiji Ishibashi ,  Takahiro Imai ,  Tomoki Uemura ,  Daichi Kawaguchi ,  Hideaki Nakahata ,  Satoshi Fujii

IPC分类号： H03H925

CPC分类号： H03H9/02582

摘要： A diamond film is deposited in the thickness of 20 &mgr;m on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.

摘要翻译： 通过灯丝CVD在0.8mm厚的硅晶片上沉积厚度为20μm的金刚石膜。 这里，将金刚石膜的氢含量调整为原子百分比为1％以上5％以下的范围。 通过用包括金刚石磨料的砂轮进行机械抛光，使金刚石膜平滑，使得其表面的算术平均粗糙度（Ra）不超过20nm。

公开(公告)号：US08147612B2

公开(公告)日：2012-04-03

申请号：US12298332

申请日：2007-04-24

申请人： Tomoki Uemura ,  Takashi Sakurada ,  Shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Takashi Sakurada ,  Shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

IPC分类号： C30B21/02

CPC分类号： H01L21/02623 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.

摘要翻译： 提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法， 晶种基片。 在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或 反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。 这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

公开(公告)号：US08294245B2

公开(公告)日：2012-10-23

申请号：US12797617

申请日：2010-06-10

申请人： Hideaki Nakahata ,  Shinsuke Fujiwara ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Seiji Nakahata ,  Tomoki Uemura

发明人： Hideaki Nakahata ,  Shinsuke Fujiwara ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Seiji Nakahata ,  Tomoki Uemura

IPC分类号： H01L29/20

CPC分类号： H01L29/872 ,  C30B25/00 ,  C30B29/406 ,  H01L21/02008 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205

摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.

摘要翻译： 提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成 衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。

公开(公告)号：US5959389A

公开(公告)日：1999-09-28

申请号：US964469

申请日：1997-11-04

申请人： Hideaki Nakahata ,  Tomoki Uemura ,  Kenjiro Higaki ,  Satoshi Fujii ,  Hiroyuki Kitabayashi ,  Shin-ichi Shikata

发明人： Hideaki Nakahata ,  Tomoki Uemura ,  Kenjiro Higaki ,  Satoshi Fujii ,  Hiroyuki Kitabayashi ,  Shin-ichi Shikata

IPC分类号： H03H9/02 ,  H03H9/10 ,  H03H9/145

CPC分类号： H03H9/02582

摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.Z /.lambda.) and a parameter kh2=2.pi.(t.sub.S /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.

摘要翻译： 根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。 其中参数kh3 =2π（tA /λ）为：0.033≤kh3

公开(公告)号：US20110132410A1

公开(公告)日：2011-06-09

申请号：US12376573

申请日：2007-06-15

申请人： Tomoki Uemura ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Hideaki Nakahata

IPC分类号： B08B3/12 ,  B32B5/16 ,  C11D7/32

CPC分类号： C30B29/403 ,  B08B3/12 ,  C30B33/00 ,  C30B33/10 ,  H01L21/02052 ,  Y10T428/25

摘要： Affords GaxIn1-xN substrates onto which high-quality epitaxial films can be stably grown, and cleaning methods for manufacturing the GaxIn1-xN substrates. GaxIn1-xN substrate in which the number of particles of not less than 0.2 μm particle size present on the GaxIn1-xN substrate surface is 20 or fewer, given that the GaxIn1-xN substrate diameter is 2 inches. Furthermore, a GaxIn1-xN substrate in which, in a photoelectron spectrum along the surface by X-ray photoelectron spectroscopy at a take-off angle of 10°, the ratio between the peak areas of the C1s electron and N1s electron (C 1s electron peak area/N 1s electron peak area) is not greater than 3.

摘要翻译： 提供可稳定生长高品质外延膜的GaxIn1-xN基板，以及用于制造GaxIn1-xN基板的清洗方法。 考虑到GaxIn1-xN基板直径为2英寸，GaxIn1-xN基板在GaxIn1-xN基板表面上存在不少于0.2μm粒径的颗粒数为20个以下的GaxIn1-xN基板。 此外，GaxIn1-xN衬底，其中，在以10°的起飞角通过X射线光电子能谱分析的沿着表面的光电子光谱中，C1s电子和N1s电子的峰面积之比（C 1s电子 峰面积/ N 1s电子峰面积）不大于3。