公开(公告)号：US20120012874A1

公开(公告)日：2012-01-19

申请号：US13180889

申请日：2011-07-12

申请人： Tomoko MORIOKA ,  Takayoshi Fujii ,  Toshitake Kitagawa ,  Kazufumi Shiozawa ,  Taisuke Sato ,  Hidefumi Yasuda ,  Yuko Kato

发明人： Tomoko MORIOKA ,  Takayoshi Fujii ,  Toshitake Kitagawa ,  Kazufumi Shiozawa ,  Taisuke Sato ,  Hidefumi Yasuda ,  Yuko Kato

IPC分类号： H01L33/60 ,  H01L33/20

CPC分类号： H01L33/20 ,  H01L33/38

摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.

摘要翻译： 根据一个实施例，半导体发光器件包括衬底，第一半导体层，发光层，第二半导体层和透光性电极。 基板包括沿着第一主表面的周边设置的第一区域和设置在从第一区域观察的第一主表面的中心侧的第二区域。 第一半导体层设置在基板的第一主表面上。 发光层设置在第一半导体层上。 第二半导体层设置在发光层上。 半透明电极设置在第二半导体层上。 第二区域的反射率高于第一区域的反射率。

公开(公告)号：US20120138985A1

公开(公告)日：2012-06-07

申请号：US13208658

申请日：2011-08-12

申请人： Hiroshi ONO ,  Toshiki HIKOSAKA ,  Tomoko MORIOKA ,  Toshiyuki OKA ,  Shinya NUNOUE

发明人： Hiroshi ONO ,  Toshiki HIKOSAKA ,  Tomoko MORIOKA ,  Toshiyuki OKA ,  Shinya NUNOUE

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层和发光部分。 第一半导体层包括n型半导体层。 第二半导体层包括p型半导体层。 发光部分设置在第一半导体层和第二半导体层之间，并且包括多个势垒层和设置在多个势垒层之间的阱层。 第一半导体层具有第一不规则性和第二不规则性。 第一不规则性设置在第一半导体层的与发光部相反的一侧的第一主表面上。 第二不规则性设置在第一凹凸的底面和顶面上，并且具有小于底面与顶面之间的水平差的水平差。