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公开(公告)号：US20120001541A1
公开(公告)日：2012-01-05
申请号：US13173074
申请日：2011-06-30
IPC分类号： H01J61/06
CPC分类号： H01J61/0732 , H01J61/0737 , H01J61/86
摘要： A short arc type discharge lamp wherein a cathode and an anode are arranged opposite to each other in an interior of a light emitting tube and said cathode comprises a main part made from tungsten and a tip end part made from thoriated tungsten, wherein thorium oxide particles having been peripherally coated with thorium are contained in the tip end part of said cathode.
摘要翻译： 一种短弧型放电灯，其中阴极和阳极在发光管的内部彼此相对布置，并且所述阴极包括由钨制成的主要部分和由钍钨制成的尖端部分，其中氧化钍粒子 被外周涂覆有钍的物质包含在所述阴极的末端部分中。
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公开(公告)号：US20120081002A1
公开(公告)日：2012-04-05
申请号：US13245028
申请日：2011-09-26
IPC分类号： H01J17/04
CPC分类号： H01J61/0735 , H01J61/0732 , H01J61/86
摘要： A short arc type discharge lamp wherein a cathode and an anode are arranged opposite to each other in an interior of a light emitting tube and said cathode consists of a main body part with tungsten as the main constituent and an emitter part comprised of thoriated tungsten, wherein an oxygen content of the main body part of said cathode is lower than that of the emitter part, and band-shaped tungsten carbide is formed at the tip end face of the emitter part of said cathode.
摘要翻译： 一种短弧型放电灯，其中阴极和阳极在发光管的内部彼此相对布置，并且所述阴极由以钨为主要成分的主体部分和由钍钨组成的发射极部分组成， 其中所述阴极的主体部分的氧含量低于发射极部分的氧含量，并且在所述阴极的发射极部分的末端面上形成带状碳化钨。
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公开(公告)号：US20120001542A1
公开(公告)日：2012-01-05
申请号：US13173098
申请日：2011-06-30
IPC分类号： H01J61/04
CPC分类号： H01J61/073 , H01J61/86
摘要： A short arc type discharge lamp wherein a cathode and an anode are arranged opposite to each other in an interior of a light emitting tube and said cathode comprises a main part made from tungsten and an emitter part made from thoriated tungsten, and said emitter part having been diffusion bonded to the main part via a joint face, wherein gaps are formed locally at said joint face of said main part and the emitter part.
摘要翻译： 一种短弧型放电灯，其中阴极和阳极在发光管的内部彼此相对布置，并且所述阴极包括由钨制成的主要部分和由钍钨制成的发射极部分，并且所述发射极部分具有 通过接合面扩散粘合到主要部分，其中间隙在所述主要部分和发射体部分的所述接合面局部形成。
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公开(公告)号：US20110181181A1
公开(公告)日：2011-07-28
申请号：US13015136
申请日：2011-01-27
IPC分类号： H01J61/18
CPC分类号： H01J61/0732 , H01J61/0735 , H01J61/86
摘要： A discharge lamp with excellent arc stability and excellent durability in which the use level of thoriated tungsten is restrained has an anode and a cathode in the interior of a discharge vessel, wherein said cathode is made up from a thoriated tungsten part with a tungsten filling ratio of at least 90 vol.-% and a main body part connected to said thoriated tungsten part and consisting of pure tungsten, wherein a ratio ST/S of a side surface area ST of said thoriated tungsten part and a side surface area S of said cathode is in a range of from 0.005 to 0.15, with the proviso that, in case the cathode has a length in the direction of the cathode axis which exceeds twice the maximum diameter of the cathode, a side surface area S is used for calculating the ratio ST/S which corresponds to the side surface area where the distance along the cathode axis from a tip end adjacent to the anode is twice the maximum diameter of the cathode.
摘要翻译： 具有优异的电弧稳定性和优异耐久性的放电灯，其中钍钨的使用水平被限制在放电容器的内部具有阳极和阴极，其中所述阴极由具有钨填充比的钍钨部分 至少90体积％，以及连接到所述钍钨部分并由纯钨组成的主体部分，其中所述钍钨部分的侧表面积ST和所述钍钨部分的侧表面积S的比率ST / S 阴极在0.005至0.15的范围内，条件是在阴极的长度方向上阴极轴线的长度超过阴极最大直径的两倍的情况下，侧面积S用于计算 与沿着阴极轴线距离与阳极相邻的尖端的距离为两倍于阴极最大直径的侧表面积的比率ST / S。
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公开(公告)号：US20070195263A1
公开(公告)日：2007-08-23
申请号：US11677246
申请日：2007-02-21
申请人： Akihiro SHIMIZU , Kota NISHI , Yoshitaka Goto , Takanori MIYAZAWA
发明人： Akihiro SHIMIZU , Kota NISHI , Yoshitaka Goto , Takanori MIYAZAWA
IPC分类号： G02C7/06
CPC分类号： G02B3/10 , B29D11/00028 , B29D11/0049
摘要： A multifocal lens includes a group including M layered lenses. M-kinds (M is an integer of two or more) of lens materials having glass deformation point temperatures of At1, At2, . . . , AtM, are used and diluted by a heat press method. A contact surface of an N−1th lens (N is an arbitrary integer of two or more and M or less) contacted with an Nth lens is a concave face, a contact surface of the Nth lens contacted with the N−1th lens is a convex face. The glass deformation point temperatures have a relation of AtN-1>AtN.
摘要翻译： 多焦点透镜包括包括M个分层透镜的组。 具有玻璃变形点温度为1/2，2/2的透镜材料的M种（M为2以上的整数）。 。 。 通过热压法使用和稀释。 与第N透镜接触的第N-1个透镜（N为2以上且M以下的任意整数）的接触面为凹面，与第N-1透镜接触的第N透镜的接触面为 凸面。 玻璃变形点温度具有在N N 1 的关系。
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公开(公告)号：US20080303091A1
公开(公告)日：2008-12-11
申请号：US12190433
申请日：2008-08-12
IPC分类号： H01L27/12 , H01L21/8238
CPC分类号： H01L29/7845 , H01L21/0217 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L21/823864 , H01L21/84 , H01L27/092 , H01L27/0922 , H01L29/665 , H01L29/6659 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.
摘要翻译： 半导体器件包括n沟道导电型FET，其具有形成在半导体衬底的主表面上的第一区域中的沟道形成区域和形成在主表面的第二区域中的沟道形成区域的ap沟道导电型FET， 第二区域与第一区域不同。 n沟道FET的栅电极的杂质浓度的杂质浓度大于p沟道FET的栅电极的杂质浓度，从而在沟道形成区域中的漏极电流的流动方向产生拉伸应力 的n沟道FET。 n沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力大于p沟道FET的沟道形成区域中的漏极电流的流动方向上的拉伸应力。
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公开(公告)号：US20110156155A1
公开(公告)日：2011-06-30
申请号：US13044260
申请日：2011-03-09
申请人： Shuji IKEDA , Toshiaki YAMANAKA , Kenichi KIKUSHIMA , Shinichiro MITANI , Kazushige SATO , Akira FUKAMI , Masaya IIDA , Akihiro SHIMIZU
发明人： Shuji IKEDA , Toshiaki YAMANAKA , Kenichi KIKUSHIMA , Shinichiro MITANI , Kazushige SATO , Akira FUKAMI , Masaya IIDA , Akihiro SHIMIZU
IPC分类号： H01L27/088
CPC分类号： H01L27/11 , G11C11/412 , G11C11/4125 , H01L21/76895 , H01L27/0203 , H01L27/0207 , H01L27/1104 , Y10S257/904
摘要： A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.
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公开(公告)号：US20090039427A1
公开(公告)日：2009-02-12
申请号：US12251536
申请日：2008-10-15
IPC分类号： H01L29/78
CPC分类号： H01L29/7845 , H01L21/0217 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L21/823864 , H01L21/84 , H01L27/092 , H01L27/0922 , H01L29/665 , H01L29/6659 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.
摘要翻译： 半导体器件包括n沟道导电型FET，其具有形成在半导体衬底的主表面上的第一区域中的沟道形成区域和形成在主表面的第二区域中的沟道形成区域的ap沟道导电型FET， 第二区域与第一区域不同。 n沟道FET的栅电极的杂质浓度的杂质浓度大于p沟道FET的栅电极的杂质浓度，从而在沟道形成区域中的漏极电流的流动方向产生拉伸应力 的n沟道FET。 n沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力大于p沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力。
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公开(公告)号：US20050185286A1
公开(公告)日：2005-08-25
申请号：US10906385
申请日：2005-02-17
申请人： Akira KOMATSU , Akihiro SHIMIZU , Katsuyuki HONDA
发明人： Akira KOMATSU , Akihiro SHIMIZU , Katsuyuki HONDA
IPC分类号： G02B15/167 , G02B13/00 , G02B13/18 , G02B15/16 , G02B15/177 , G02B15/14
CPC分类号： G02B13/004 , G02B13/009 , G02B15/177
摘要： A miniature zoom lens has, sequentially from an object side, a first lens group G1 having negative refractive power, a second lens group G2 having positive refractive power and including a diaphragm, and a third lens group G3 having positive refractive power. The first lens group G1 is formed from a single negative lens L1. The second lens group G2 is formed from, sequentially from the object side, a single positive lens L2 and a single negative lens L3. The third lens group G3 is formed form a single positive lens L4. The first lens group G1 is immovable and the second lens group G2 and the third lens group G3 move in an optical axis direction at variable power. The miniature zoom lens provides a large zoom ratio while keeping a constant total length.
摘要翻译： 微型变焦透镜从物体侧依次具有具有负折光力的第一透镜组G 1，具有正折射光焦度的第二透镜组G 2和具有正光焦度的第三透镜组G 3。 第一透镜组G 1由单个负透镜L 1形成。 第二透镜组G 2从物体侧依次形成为单个正透镜L 2和单个负透镜L 3.第三透镜组G 3形成为单个正透镜L 4。 第一透镜组G 1是不可移动的，第二透镜组G 2和第三透镜组G 3以可变光焦度沿光轴方向移动。 微型变焦镜头提供大的变焦比，同时保持恒定的总长度。
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