Solid-state imaging device
    2.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4405935A

    公开(公告)日:1983-09-20

    申请号:US227679

    申请日:1981-01-23

    CPC分类号: H01L27/14672

    摘要: Disclosed is a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for selecting positions of picture elements and scanners for turning "on" and "off" the switching elements in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected to one end of each of the switching elements, and a light transmitting electrode which is disposed on the photoconductive film, characterized at least in that a breakdown voltage of a junction formed between the semiconductor substrate and an impurity region which has a conductivity type opposite to that of the semiconductor substrate and which stores therein carriers attendant upon incidence of light is made smaller than a breakdown voltage between the storing first impurity region of said each switching element and a second impurity region thereof which forms a signal leading-out portion.

    摘要翻译: 公开了一种具有半导体集成电路的固态成像装置,其中用于选择用于按时间顺序将开关元件“接通”和“关闭”的图像元素和扫描器的位置的多个开关元件设置在相同的基板上, 设置在所述集成电路上并连接到每个所述开关元件的一端的光电导膜和设置在所述光电导膜上的透光电极,其特征在于,至少形成在所述光电导膜之间形成的结的击穿电压, 所述半导体衬底和具有与所述半导体衬底的导电类型相反的导电类型并且存储在入射时伴随的载流子的杂质区域被制成小于所述每个开关元件的所述存储第一杂质区域与所述第二开关元件的存储第一杂质区域之间的击穿电压 其形成信号导出部分的杂质区域。

    Color solid-state imager
    3.
    发明授权
    Color solid-state imager 失效
    彩色固态成像仪

    公开(公告)号:US4500915A

    公开(公告)日:1985-02-19

    申请号:US423446

    申请日:1982-09-24

    摘要: The present invention consists in providing a CCD type color solid-state imager in which color signals respectively separated in time can be derived from picture elements for respective colors arrayed in the shape of a matrix and which permits interlacing without degrading a resolution and without causing image lag. Concretely, pairs of CCD shift registers which are electrically insulated and separated and which run in the vertical direction are arrayed in the horizontal direction, signal charges stored in adjacent picture elements are sent into the individual opposing CCD registers through transfer gates arrayed in a checkerboard pattern, and signal charges transferred in time sequence are distributed to a plurality of CCD shift registers which run in the horizontal direction, whereby a CCD type color solid-state imager having a high resolution and exhibiting no image lag is obtained.

    摘要翻译: 本发明的目的在于提供一种CCD型彩色固态成像器,其中分别在时间上分离出的色信号可以从以矩阵形排列的各种颜色的图像元素中导出,并且允许隔行扫描而不降低分辨率并且不引起图像 落后。 具体地说,电绝缘和分离并沿垂直方向延伸的CCD对移位寄存器沿水平方向排列,存储在相邻像素中的信号电荷通过排列在棋盘图案中的传输门发送到各个相对的CCD寄存器 ,并且以时间顺序传送的信号电荷被分配到在水平方向上运行的多个CCD移位寄存器,由此获得具有高分辨率且不显示图像滞后的CCD型彩色固态成像器。

    Method for fabricating a solid-state imaging device using
photoconductive film
    4.
    发明授权
    Method for fabricating a solid-state imaging device using photoconductive film 失效
    使用光电导膜制造固态成像装置的方法

    公开(公告)号:US4364973A

    公开(公告)日:1982-12-21

    申请号:US247737

    申请日:1981-03-26

    CPC分类号: H01L27/14665

    摘要: A method for fabricating a solid-state imaging device using photoconductive film, comprising the step of depositing a photoconductive material onto a scanner IC by the use of a shield plate, the scanner IC including vertical switching MOS transistors and horizontal switching MOS transistors arrayed in the form of a matrix and vertical and horizontal scanning shift registers for scanning the vertical and horizontal switching MOS transistors respectively, the shield plate having an open part corresponding to a vertical switching MOS transistor array area.

    摘要翻译: 一种使用光电导膜制造固态成像装置的方法,包括通过使用屏蔽板将光电导材料沉积到扫描仪IC上的步骤,所述扫描器IC包括垂直开关MOS晶体管和排列在 形式的矩阵和用于扫描垂直和水平切换MOS晶体管的垂直和水平扫描移位寄存器,所述屏蔽板具有对应于垂直开关MOS晶体管阵列区域的开路部分。

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4360821A

    公开(公告)日:1982-11-23

    申请号:US66230

    申请日:1979-08-13

    IPC分类号: H01L27/146 H01L27/14

    CPC分类号: H01L27/14665

    摘要: In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.

    摘要翻译: 在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上,感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜 感光材料层; 一种固态成像装置,其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。 感光材料的氢含量优选为5原子%至30原子%,特别是10原子%至25原子%。

    Solid-state imaging device
    6.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4323912A

    公开(公告)日:1982-04-06

    申请号:US152690

    申请日:1980-05-23

    CPC分类号: H01L27/14665

    摘要: In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.

    摘要翻译: 在具有半导体集成电路的固态成像装置中,其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上, 设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极,施加到光透射电极的电压,从而偏压光电导区域 相对于其相对侧的区域,光入射侧的膜是正或负的; 一种固态成像装置,其特征在于,所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

    Optical image sensor apparatus with grouped photosensors connected in
common
    8.
    发明授权
    Optical image sensor apparatus with grouped photosensors connected in common 失效
    具有分组光电传感器的光学图像传感器装置共同连接

    公开(公告)号:US4556800A

    公开(公告)日:1985-12-03

    申请号:US479893

    申请日:1983-03-29

    摘要: An optical image sensor apparatus in which a plurality of photosensors arrayed in a primary scanning direction are scanned to produce readout signals. The plurality of photosensors are classified into a number of groups each including a predetermined number of the photosensors, wherein those photosensors occupying equivalently the same position in the different groups are combined in common. The outputs of the photosensors are sequentially and selectively scanned on a group basis to produce readout signal for each of the groups. To provide a scanning readout operation at an increased speed, an integrating circuit is provided for each of the photosensors exchangeably for each group. The outputs of all the photosensors belonging to a given one of the group are simultaneously supplied to the respective integrating circuits. The readout signal output is obtained by scanning sequentially the outputs of the integrating circuits.

    摘要翻译: 其中扫描沿主扫描方向排列的多个光电传感器以产生读出信号的光学图像传感器装置。 多个光电传感器被分成多个组,每个组包括预定数量的光传感器,其中在不同组中占据相同位置的那些光传感器共同组合。 依次选择性地扫描光电传感器的输出,以产生每个组的读出信号。 为了以增加的速度提供扫描读出操作,为每组可更换的每个光电传感器提供积分电路。 属于给定组中的所有光电传感器的输出被同时提供给各个积分电路。 通过依次扫描积分电路的输出来获得读出信号输出。

    Photoelectric conversion element
    9.
    发明授权
    Photoelectric conversion element 失效
    光电转换元件

    公开(公告)号:US4554478A

    公开(公告)日:1985-11-19

    申请号:US497841

    申请日:1983-05-25

    摘要: In a photoelectric conversion element including at least a first electrode and a photoconductive layer having an amorphous material whose indispensable constituent is silicon and which contains hydrogen as an essential constituent element on a predetermined substrate, the present invention discloses a photoelectric conversion element wherein said layer of the amorphous material is disposed on said first electrode via a light transmitting or light semi-transmitting metallic layer for adhesion with respect to said amorphous material. As said metallic layer for adhesion, preferred is a layer consisting of at least one metal selected from the group consisting of Ta, Cr, W, Nd, Mo, V and Ti. Thus, adhesion between said substrate and said amorphous material can be improved.

    摘要翻译: 在至少具有第一电极和光电导层的光电转换元件中,所述光电转换元件具有不可缺少的成分为硅并且含有作为必要构成元素的氢作为预定基板的非晶材料的光电转换元件,本发明公开了一种光电转换元件, 非晶材料通过透光或半透光金属层设置在所述第一电极上,用于相对于所述无定形材料的粘合。 作为所述金属粘合层,优选由选自Ta,Cr,W,Nd,Mo,V和Ti中的至少一种金属组成的层。 因此,可以提高所述基板和所述非晶材料之间的粘附。

    Photo electro transducer device
    10.
    发明授权
    Photo electro transducer device 失效
    光电传感器装置

    公开(公告)号:US4565928A

    公开(公告)日:1986-01-21

    申请号:US421403

    申请日:1982-09-22

    摘要: A photosensor comprises a first conductive layer formed on a given substrate, a one-dimensional array of a plurality of unit picture elements formed on the first conductive layer to extend in the longitudinal direction thereof, each unit picture element having a photodiode and a blocking diode connected in series with the photodiode in a relationship of reversed rectifying direction therewith, a second conductive layer for connecting together, at one end, respective unit picture elements belonging to each of at least two unit picture element groups having each at least two of adjacent unit picture elements, and a third conductive layer for connecting together, at the other end, corresponding unit picture elements in the respective groups, the set of the photodiode and blocking diode in the respective groups being made of the same semiconductor material. Dispersion of outputs from the respective unit picture elements can be minimized.

    摘要翻译: 光电传感器包括形成在给定衬底上的第一导电层,形成在第一导电层上的多个单位像素的一维阵列,以沿其纵向方向延伸,每个单位像素具有光电二极管和阻塞二极管 与反射整流方向的光电二极管串联连接的第二导电层,用于将属于至少两个单元像素组中的至少两个单元像素组中的每一个的相应单元图像元素连接在一起的第二导电层, 图像元素和用于将另一端连接在一起的第三导电层,各组中的相应单元像素,各组中的光电二极管和阻塞二极管的组由相同的半导体材料制成。 可以将来自相应单元图像的输出的色散最小化。