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公开(公告)号：US20110295405A1
公开(公告)日：2011-12-01
申请号：US13147736
申请日：2010-12-14
申请人： Toshiaki Sudo , Eriko Suzuki , Naoki Ono
发明人： Toshiaki Sudo , Eriko Suzuki , Naoki Ono
IPC分类号： G06F19/00
CPC分类号： C03B19/095 , C30B15/10 , G06F17/5018 , G06F2217/80
摘要： Provided is a method of calculating a temperature distribution with higher accuracy than a conventional method, which calculates a temperature distribution of an inner surface of a silica powder molded body during manufacturing based on boundary conditions corrected in accordance with the actually measured temperature in consideration of plasma radiation by arc discharge and heat radiation of arc discharge.According to a method of calculating a temperature distribution of a crucible during manufacturing, includes a temperature calculation process in which a temperature calculator calculates temperature distribution in an inner surface of a silica powder molded body through a numerical calculation method which mesh-divides an object to be calculated, by calculating heat flux from heat plasma modeled by a gas flow and radiation of heat plasma radiated from arc electrodes, wherein the temperature distribution is calculated by adjusting gas flow and radiation conditions in a way that the calculated temperature distribution and the actually measured temperature distribution of an inner surface of a silica powder molded body becomes similar, and reading, from a correspondence table, gas flow and radiation conditions corresponding each step of a control sequence for producing a crucible.
摘要翻译： 提供了一种比传统方法更高精度地计算温度分布的方法，该方法基于考虑到等离子体而根据实际测量的温度校正的边界条件计算制造期间二氧化硅粉末成型体的内表面的温度分布 电弧放电辐射和放电电弧放电。 根据制造时的坩埚的温度分布的计算方法，包括温度计算处理，其中温度计算器通过数值计算方法计算二氧化硅粉末成形体的内表面的温度分布， 通过计算由通过气流和从电弧电极辐射的热等离子体的辐射建立的热等离子体的热通量来计算，其中通过以计算的温度分布和实际测量的方式调节气体流量和辐射条件来计算温度分布 二氧化硅粉末成型体的内表面的温度分布变得相似，并且从对应表读取对应于用于制造坩埚的控制顺序的每个步骤的气体流量和辐射条件。
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公开(公告)号：US08739573B2
公开(公告)日：2014-06-03
申请号：US13389392
申请日：2010-08-09
申请人： Toshiaki Sudo , Eriko Suzuki , Hiroshi Kishi , Takeshi Fujita
发明人： Toshiaki Sudo , Eriko Suzuki , Hiroshi Kishi , Takeshi Fujita
CPC分类号： C25B11/12 , C03B19/09 , C03B19/095 , C04B35/52 , C25B11/0405 , Y02P40/57
摘要： There are provided an apparatus and a method for manufacturing a vitreous silica crucible which can prevent the deterioration of the inner surface property in the manufacturing process of a vitreous silica crucible. The apparatus includes a mold defining an outer shape of a vitreous silica crucible, and an arc discharge unit having electrodes and a power-supply unit, wherein each of the electrodes includes a tip end directed to the mold, the other end opposite to the tip end, and a bent portion provided between the tip end and the other end.
摘要翻译： 提供了一种可以防止在石英玻璃坩埚的制造过程中内表面特性劣化的石英玻璃坩埚的制造装置和方法。 该装置包括限定二氧化硅玻璃坩埚的外形的模具和具有电极和电源单元的电弧放电单元，其中每个电极包括指向模具的尖端，与尖端相对的另一端 端部和设置在前端和另一端之间的弯曲部分。
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公开(公告)号：US08726692B2
公开(公告)日：2014-05-20
申请号：US13337948
申请日：2011-12-27
申请人： Toshiaki Sudo , Eriko Suzuki
发明人： Toshiaki Sudo , Eriko Suzuki
CPC分类号： C03B19/095 , G01J5/0022 , Y02P40/57
摘要： The present invention provides a method of manufacturing a vitreous silica crucible by heating and fusing a silica powder layer in a rotating mold by arc discharge generated by carbon electrodes comprising: a preparation process for determining optimal temperatures during heating and fusing the silica powder layer for one or more selected from the group consisting of the silica powder layer, fume generated during arc fusing, and arc flame generated in the arc discharge; a temperature measuring process for measuring actual temperatures during heating and fusing for one or more selected from the group where the optimal temperatures are determined; and a temperature controlling process for controlling the actual temperatures for one or more selected from the group where the actual temperatures are measured so that the actual temperatures match the optimal temperatures.
摘要翻译： 本发明提供一种通过由碳电极产生的电弧放电加热和熔融旋转模具中的二氧化硅粉末层而制造石英玻璃坩埚的方法，包括：用于确定加热期间的最佳温度并将二氧化硅粉末层熔合在一起的制备方法 或更多选自二氧化硅粉末层，电弧熔合时产生的烟雾和在电弧放电中产生的电弧火焰; 用于测量加热和熔化中的实际温度的温度测量过程，所述温度是从确定最佳温度的组中选出的一种或多种; 以及用于控制从实际温度被测量的组中选出的一个或多个实际温度的温度控制过程，使得实际温度与最佳温度相匹配。
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公开(公告)号：US09797063B2
公开(公告)日：2017-10-24
申请号：US13307253
申请日：2011-11-30
申请人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
发明人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
CPC分类号： C30B15/10 , C03B19/095 , Y10T117/1032
摘要： The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm−1 and 606 cm−1, respectively, in Raman spectrum of vitreous silica of the region having a thickness of 2 mm from an outer surface to an inner surface of a wall of the crucible.
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公开(公告)号：US09115019B2
公开(公告)日：2015-08-25
申请号：US13145094
申请日：2010-12-14
申请人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
发明人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
IPC分类号： C03B19/06 , C03B19/09 , C03C15/00 , C03C23/00 , C30B15/10 , C30B29/06 , C30B35/00 , C03C17/23
CPC分类号： C03B19/095 , C03C15/00 , C03C17/23 , C03C23/0025 , C03C23/007 , C03C2218/345 , C30B15/10 , C30B29/06 , C30B35/002 , Y02P40/57 , Y10T117/1032
摘要： Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion.
摘要翻译： 提供一种制造用于拉制硅单晶的石英玻璃坩埚的方法，其可以抑制填充在其中的硅熔体的熔融表面振动并且具有长的寿命。 坩埚包括周壁部分，弯曲部分和底部部分，并且在周壁部分的内表面的特定区域上具有多个微凹部。
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公开(公告)号：US09085480B2
公开(公告)日：2015-07-21
申请号：US13337918
申请日：2011-12-27
申请人： Toshiaki Sudo , Eriko Suzuki
发明人： Toshiaki Sudo , Eriko Suzuki
CPC分类号： C03B19/095
摘要： There is provided a method of manufacturing a vitreous silica crucible having a suitably controlled inner surface property. The present invention provides a method of manufacturing a vitreous silica crucible by heating and fusing a silica powder layer in a rotating mold by arc discharge generated by carbon electrodes including: a preparation process for determining optimal fusing temperatures during heating and fusing the silica powder layer at plural points of different heights of the silica powder layer; a temperature measuring process for measuring actual temperatures during heating and fusing the silica powder layer at the plural points; a temperature controlling process for controlling the actual temperatures at the plural points so that the actual temperatures matches the optimal fusing temperatures at the respective points.
摘要翻译： 提供了一种具有适当控制的内表面性能的石英玻璃坩埚的制造方法。 本发明提供一种通过碳化硅电极产生的电弧放电加热熔融旋转模具中的二氧化硅粉末层而制造石英玻璃坩埚的方法，包括：在加热和熔融二氧化硅粉末层期间确定最佳定影温度的制备方法 二氧化硅粉末层的不同高度的多个点; 用于在多个点加热和熔融二氧化硅粉末层期间测量实际温度的温度测量过程; 用于控制多个点处的实际温度的温度控制过程，使得实际温度与各个点处的最佳定影温度相匹配。
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公开(公告)号：US08806892B2
公开(公告)日：2014-08-19
申请号：US13337845
申请日：2011-12-27
申请人： Toshiaki Sudo , Eriko Suzuki
发明人： Toshiaki Sudo , Eriko Suzuki
CPC分类号： C03B19/095 , Y02P40/57
摘要： The present invention provides a method of manufacturing a vitreous silica crucible including: a silica powder supplying process of supplying a material silica powder into a mold for molding a crucible, to form a silica powder layer, and an arc fusing process of arc fusing the silica powder layer by arc discharge generated by carbon electrodes, wherein the arc fusing process includes processes of measuring a temperature of the silica powder layer, and controlling a vitreous silica fused state based on a reference temperature which is a temperature at a local maximum point which appears first in the arc fusing process.
摘要翻译： 本发明提供一种石英玻璃坩埚的制造方法，其特征在于，包括：二氧化硅粉末供给工序，将二氧化硅粉末供给到用于成型坩埚的模具中，形成二氧化硅粉末层，以及电弧熔合二氧化硅 由碳电极产生的电弧放电的粉末层，其中电弧熔合工艺包括测量二氧化硅粉末层的温度和基于作为出现的局部最大点处的温度的参考温度来控制氧化硅熔融状态的过程 首先在电弧定影过程中。
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公开(公告)号：US20120255487A1
公开(公告)日：2012-10-11
申请号：US13145094
申请日：2010-12-14
申请人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
发明人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
CPC分类号： C03B19/095 , C03C15/00 , C03C17/23 , C03C23/0025 , C03C23/007 , C03C2218/345 , C30B15/10 , C30B29/06 , C30B35/002 , Y02P40/57 , Y10T117/1032
摘要： Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion.
摘要翻译： 提供一种制造用于拉制硅单晶的石英玻璃坩埚的方法，其可以抑制填充在其中的硅熔体的熔融表面振动并且具有长的寿命。 坩埚包括周壁部分，弯曲部分和底部部分，并且在周壁部分的内表面的特定区域上具有多个微凹部。
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9.发明授权公开(公告)号：US09328009B2
公开(公告)日：2016-05-03
申请号：US13106993
申请日：2011-05-13
申请人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
发明人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
CPC分类号： C03B19/095 , C30B11/002 , C30B29/06 , C30B35/002 , Y02P40/57 , Y10T117/1032
摘要： Provided is a vitreous silica crucible for pulling a silicon single crystal, which stably suppresses surface vibration of a silicon melted solution filled therein and has a long life, and a method for manufacturing the same. The vitreous silica crucible for pulling a silicon single crystal includes a peripheral wall portion, a curved portion, and a bottom portion, wherein a plurality of minute concave portions are formed on a certain area of an inner surface of the peripheral wall portion, and a plurality of bubbles are formed on a lower position of the minute concave portions.
摘要翻译： 本发明提供一种用于拉伸硅单晶的玻璃状石英坩埚，其能够稳定地抑制填充在其中的硅熔融溶液的表面振动并且具有长寿命及其制造方法。 用于拉出硅单晶的玻璃状石英坩埚包括周壁部分，弯曲部分和底部部分，其中在周壁部分的内表面的特定区域上形成有多个微小凹部， 在微小凹部的下部位置形成有多个气泡。
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10.发明授权公开(公告)号：US09157168B2
公开(公告)日：2015-10-13
申请号：US13166189
申请日：2011-06-22
申请人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
发明人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
CPC分类号： C30B15/10 , C03B19/095 , C30B29/06 , C30B35/002 , Y10T117/1032
摘要： Provided is a vitreous silica crucible which can suppress inward sagging and buckling of the sidewall effectively even when time for pulling silicon ingots is extremely long. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein the crucible has a wall comprising, from an inner surface toward an outer surface of the crucible, a transparent vitreous silica layer having a bubble content rate of less than 0.5%, a bubble-containing vitreous silica layer having a bubble content rate of 1% or more and less than 50%, a semi-transparent vitreous silica layer having a bubble content rate of 0.5% or more and less than 1.0% and having an OH group concentration of 35 ppm or more and less than 300 ppm.
摘要翻译： 本发明提供一种玻璃状石英坩埚，即使在硅锭的拉伸时间极长的情况下也能够有效地抑制侧壁的向下的下垂和翘曲。 根据本发明，提供了一种用于拉制硅单晶的石英玻璃坩埚，其中坩埚具有从坩埚的内表面朝向外表面的包含具有气泡含量率的透明玻璃状二氧化硅层的壁 小于0.5％的气泡含量为1％以上且小于50％的含气泡的玻璃状二氧化硅层，气泡含量率为0.5％以上且小于1.0％的半透明玻璃状石英层， OH基浓度为35ppm以上且小于300ppm。
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