公开(公告)号：US10551589B2

公开(公告)日：2020-02-04

申请号：US15551765

申请日：2016-02-17

申请人： Toshihiko Honma ,  Noriyuki Kobayashi

发明人： Toshihiko Honma ,  Noriyuki Kobayashi

IPC分类号： G02B7/10 ,  G02B7/08 ,  G02B7/02 ,  G02B7/04 ,  G02B7/09 ,  G03B3/10 ,  H02K41/035

摘要： Using drive force from a voice coil motor constituted of an autofocus coil unit and an autofocus magnet unit, a lens drive device automatically carries out focusing by moving an autofocus movable unit, which includes the autofocus coil unit, with respect to an autofocus fixed unit, which includes the autofocus magnet unit, in the direction of an optical axis. The autofocus movable unit has a lens holder that holds the autofocus coil unit. The lens holder has a cut-out part recessed on the inside in the radial direction from the outer periphery of the holder, and a binding part that protrudes to the outside in the radial direction from the cut-out part and binds an end part of the autofocus coil unit. The tip of the binding part is positioned to the inside of the outer periphery of the holder in the radial direction.

公开(公告)号：US09130018B2

公开(公告)日：2015-09-08

申请号：US13584327

申请日：2012-08-13

申请人： Naotsugu Hoshi ,  Noriyuki Kobayashi

发明人： Naotsugu Hoshi ,  Noriyuki Kobayashi

IPC分类号： H01L21/306 ,  C23F1/00 ,  H01L21/768 ,  H01J37/32 ,  H01L21/311

CPC分类号： H01L21/76813 ,  H01J37/32091 ,  H01J37/32926 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76814

摘要： A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.

摘要翻译： 能够提高阻挡层与层间绝缘膜的选择比的等离子体蚀刻方法。 等离子体蚀刻方法是在具有由CwFx（x和w是预定的自然数）形成的层间绝缘膜的基板上进行的，停止层停止蚀刻并露出在形成于其中的孔或沟槽的底部 层间绝缘膜。 层间绝缘膜和停止层同时暴露于由CyFz（y和z是预定的自然数）产生的等离子体气体和含氢气体。

公开(公告)号：US08901303B2

公开(公告)日：2014-12-02

申请号：US13067838

申请日：2011-06-29

申请人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

发明人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

IPC分类号： C07D401/06 ,  C07D215/227 ,  A61K31/497

CPC分类号： C07D215/227 ,  C07B2200/13 ,  C07D215/22 ,  Y10T428/2982

摘要： The present invention provides low hygroscopic forms of aripiprazole and processes for the preparation thereof which will not convert to a hydrate or lose their original solubility even when a medicinal preparation containing the anhydrous Aripiprazole crystals is stored for an extended period.

公开(公告)号：US20130344346A1

公开(公告)日：2013-12-26

申请号：US13980405

申请日：2012-01-10

申请人： Maiko Suzuki ,  Satoshi Kitada ,  Tomoyuki Nemoto ,  Noriyuki Kobayashi ,  Kouichirou Taniguchi

发明人： Maiko Suzuki ,  Satoshi Kitada ,  Tomoyuki Nemoto ,  Noriyuki Kobayashi ,  Kouichirou Taniguchi

IPC分类号： B32B27/08

CPC分类号： B32B27/08 ,  B32B27/18 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/327 ,  B32B2250/03 ,  B32B2250/242 ,  B32B2250/246 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/30 ,  B32B2307/306 ,  B32B2307/412 ,  B32B2307/50 ,  B32B2307/514 ,  B32B2307/54 ,  B32B2307/58 ,  B32B2307/704 ,  B32B2307/734 ,  B32B2439/70 ,  B32B2553/00 ,  C08L23/10 ,  C08L2205/02 ,  Y10T428/31844 ,  Y10T428/31913 ,  Y10T428/3192

摘要： There is provided a packaging film which has a good suitability for use in an automatic packaging machine, and is free from occurrence of sagging even when stored in a low-temperature condition for a long period of time as well as hardly suffers from occurrence of whitening when subjected to high stretch packaging. The stretch packaging film of the present invention comprises a laminated film having at least three layers comprising opposite surface layers each comprising an ethylene-based resin (A) as a main component and an intermediate layer comprising a propylene-based resin (C) and a propylene-based resin (B) which respectively satisfy specific conditions, at a specific compounding ratio, and having a heat of crystallization (ΔHc) of 10 to 60 J/g as measured at a temperature drop rate of 10° C./min using a differential scanning calorimeter (DSC) and a storage elastic modulus (E′) at 20° C. of 100 MPa to 1 GPa as measured with respect to the laminated film at an oscillation frequency of 10 Hz and a distortion of 0.1% by a dynamic viscoelasticity measuring method.

摘要翻译： 提供了一种在自动包装机中具有良好适用性的包装膜，并且即使在长时间的低温条件下储存时也不会发生流挂，并且几乎不发生白化 当经受高拉伸包装时。 本发明的拉伸包装膜包括具有至少三层的层压膜，其包含各自包含乙烯类树脂（A）作为主要成分的相对表面层，以及包含丙烯类树脂（C）和 丙烯类树脂（B）分别满足特定条件，特定配混比，结晶热（DeltaHc）为10〜60J / g，以10℃/分钟的降温速度测定，使用 差示扫描量热计（DSC）和在20℃下的储能弹性模量（E'）为100MPa至1GPa，相对于叠层膜以10Hz的振荡频率和0.1％的失真度测量 动态粘弹性测量方法。

公开(公告)号：US08580796B2

公开(公告)日：2013-11-12

申请号：US13350117

申请日：2012-01-13

申请人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

发明人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

IPC分类号： A61K31/497 ,  C07D401/06

CPC分类号： C07D215/227 ,  C07B2200/13 ,  C07D215/22 ,  Y10T428/2982

摘要： The present invention provides low hygroscopic forms of aripiprazole and processes for the preparation thereof which will not convert to a hydrate or lose their original solubility even when a medicinal preparation containing the anhydrous Aripiprazole crystals is stored for an extended period.

摘要翻译： 本发明提供低吸湿形式的阿立哌唑及其制备方法，即使当含有无水阿立哌唑晶体的药物制剂长时间储存​​时，其也不会转化为水合物或丧失其原始溶解度。

公开(公告)号：US20120308378A1

公开(公告)日：2012-12-06

申请号：US13575883

申请日：2011-01-24

申请人： Noriyuki Kobayashi ,  Hitomi Ito

发明人： Noriyuki Kobayashi ,  Hitomi Ito

IPC分类号： F01D25/24

CPC分类号： F04B39/121 ,  B23K9/0286 ,  B23K9/164 ,  B23K9/173 ,  B23K33/006 ,  B23K2101/12 ,  F01C19/005 ,  F04B39/14 ,  F04C23/008 ,  F04C2230/231 ,  F04C2240/30 ,  Y10S418/01

摘要： Provided is a fluid machine which can be produced to have an increased weld strength and an increased reliability, at a reduced production cost. A first and a second shells (78, 80), each having a rim and a sealing portion constituting part of the rim, are butted together with the rims (78a, 80a) held together to form a groove (82) and with the sealing portions (96, 98) in contact with each other, and joined together by a weld (84) formed in the groove over the entire length of the groove to be separated from the sealing portions by a space (100).

摘要翻译： 本发明提供一种能够以降低的制造成本生产具有增加的焊接强度和增加的可靠性的流体机械。 第一和第二壳体（78,80）各自具有构成边缘的一部分的边缘和密封部分，与边缘（78a，80a）保持在一起以形成凹槽（82）并与密封件 彼此接触的部分（96,98），并且通过形成在所述凹槽中的所述凹槽的整个长度上的焊缝（84）连接在一起，以与所述密封部分分离空间（100）。

公开(公告)号：US08139243B2

公开(公告)日：2012-03-20

申请号：US11197459

申请日：2005-08-05

申请人： Naohiro Isshiki ,  Yukihiko Shimizu ,  Noriyuki Kobayashi ,  Takeshi Namikata ,  Atsushi Matsumoto ,  Tomohiro Akiba ,  Takeshi Suwabe ,  Akira Negishi ,  Hidehiko Yokoyama

发明人： Naohiro Isshiki ,  Yukihiko Shimizu ,  Noriyuki Kobayashi ,  Takeshi Namikata ,  Atsushi Matsumoto ,  Tomohiro Akiba ,  Takeshi Suwabe ,  Akira Negishi ,  Hidehiko Yokoyama

IPC分类号： G06F3/12

CPC分类号： G06F3/126 ,  G06F3/1222 ,  G06F3/1238 ,  G06F3/1288 ,  G06F21/608

摘要： A print job often includes secret information, and information may suffer sniffing from devices that execute distributed processing of jobs, or on the network. Therefore, executing the distributed processing of a print job including secret information reduces the robustness in terms of security protection. Hence, upon reception of a job, a task manager (TM) issues, to a dynamic job scheduler (DJS), a request of target devices of distributed processing according to a security level indicating the importance level of data included in that job. The DJS notifies the TM of the target devices, and the TM transmits divided jobs to the target devices.

摘要翻译： 打印作业通常包括秘密信息，并且信息可能遭受来自执行作业的分布式处理的设备或网络上的嗅探。 因此，执行包括秘密信息的打印作业的分布式处理降低了安全保护方面的鲁棒性。 因此，在接收到作业时，任务管理器（TM）根据指示该作业中包括的数据的重要性级别的安全级别向动态作业调度器（DJS）发出分布式处理的目标设备的请求。 DJS通知TM目标设备，TM将分配的作业发送到目标设备。

公开(公告)号：US08125668B2

公开(公告)日：2012-02-28

申请号：US11682436

申请日：2007-03-06

申请人： Noriyuki Kobayashi

发明人： Noriyuki Kobayashi

IPC分类号： G06F3/12 ,  G06K1/00

CPC分类号： G06F3/1288 ,  G06F3/1204 ,  G06F3/1222 ,  G06F3/1238 ,  G06F3/1273 ,  G06F21/608 ,  H04N1/00204 ,  H04N1/00464 ,  H04N1/00493 ,  H04N1/32128 ,  H04N1/4413 ,  H04N1/444 ,  H04N2201/0094 ,  H04N2201/3246 ,  H04N2201/3278

摘要： An information processing device, capable of communicating with an image processing device, has: an acceptance unit to accept an instruction as to whether or not to add, to a print job, browsing management information corresponding to an original file of the print job; and a transfer unit to, in a case where the acceptance unit accepts the instruction to add the browsing management information, add the browsing management information to the print job and transfer the acquired print job to the image processing device, and, in a case where the acceptance unit does not accept the instruction to add the browsing management information, transfer the print job to the image processing device without adding the browsing management information.

摘要翻译： 一种能够与图像处理装置通信的信息处理装置具有：接收单元，接受关于是否向打印作业添加与打印作业的原始文件相对应的浏览管理信息的指示; 以及传送单元，在接受单元接受添加浏览管理信息的指示的情况下，将浏览管理信息添加到打印作业并将获取的打印作业传送到图像处理装置，并且在如下情况下 接收单元不接受添加浏览管理信息的指令，将打印作业传送到图像处理装置，而不添加浏览管理信息。

公开(公告)号：US20110214815A1

公开(公告)日：2011-09-08

申请号：US13113330

申请日：2011-05-23

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC分类号： H01L21/3065

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3065

摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US07988816B2

公开(公告)日：2011-08-02

申请号：US11157061

申请日：2005-06-21

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ooya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ooya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

CPC分类号： H01J37/32422 ,  H01J37/32018 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/2001 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/67069 ,  Y10S156/915

摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

摘要翻译： 等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体以在晶片W上进行等离子体蚀刻。该装置还包括设置在晶片周围的冷却环，设置在冷却周围的校正环 环和直接连接到校正环的可变直流电源，所述直流电压被预设为向校正环提供相对于地电位的负偏压，用于吸引等离子体中的离子并将校正环的温度增加到 补偿由于冷却环导致的目标基板的边缘附近的空间的温度的降低。