摘要:
In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.
摘要:
In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要:
The present invention consists in providing a CCD type color solid-state imager in which color signals respectively separated in time can be derived from picture elements for respective colors arrayed in the shape of a matrix and which permits interlacing without degrading a resolution and without causing image lag. Concretely, pairs of CCD shift registers which are electrically insulated and separated and which run in the vertical direction are arrayed in the horizontal direction, signal charges stored in adjacent picture elements are sent into the individual opposing CCD registers through transfer gates arrayed in a checkerboard pattern, and signal charges transferred in time sequence are distributed to a plurality of CCD shift registers which run in the horizontal direction, whereby a CCD type color solid-state imager having a high resolution and exhibiting no image lag is obtained.
摘要:
In a thin film device having a hydrogenated amorphous silicon film, a metal layer is formed on the hydrogenated amorphous silicon film and then the metal layer is removed. A resulting reaction layer formed on the hydrogenated amorphous silicon film is used as a resistor.
摘要:
A photosensor comprises a first conductive layer formed on a given substrate, a one-dimensional array of a plurality of unit picture elements formed on the first conductive layer to extend in the longitudinal direction thereof, each unit picture element having a photodiode and a blocking diode connected in series with the photodiode in a relationship of reversed rectifying direction therewith, a second conductive layer for connecting together, at one end, respective unit picture elements belonging to each of at least two unit picture element groups having each at least two of adjacent unit picture elements, and a third conductive layer for connecting together, at the other end, corresponding unit picture elements in the respective groups, the set of the photodiode and blocking diode in the respective groups being made of the same semiconductor material. Dispersion of outputs from the respective unit picture elements can be minimized.
摘要:
A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
摘要:
A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit scanning of the elements by scanners. To counteract noise and blooming, a second field effect transistor acting as an amplifier is connected between the photoelectric converting element and the switching field effect transistor. A third field effect transistor is coupled to the photoelectric converting element for resetting the same.
摘要:
Disclosed is a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for selecting positions of picture elements and scanners for turning "on" and "off" the switching elements in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected to one end of each of the switching elements, and a light transmitting electrode which is disposed on the photoconductive film, characterized at least in that a breakdown voltage of a junction formed between the semiconductor substrate and an impurity region which has a conductivity type opposite to that of the semiconductor substrate and which stores therein carriers attendant upon incidence of light is made smaller than a breakdown voltage between the storing first impurity region of said each switching element and a second impurity region thereof which forms a signal leading-out portion.
摘要:
A method for fabricating a solid-state imaging device using photoconductive film, comprising the step of depositing a photoconductive material onto a scanner IC by the use of a shield plate, the scanner IC including vertical switching MOS transistors and horizontal switching MOS transistors arrayed in the form of a matrix and vertical and horizontal scanning shift registers for scanning the vertical and horizontal switching MOS transistors respectively, the shield plate having an open part corresponding to a vertical switching MOS transistor array area.
摘要:
An optical image sensor apparatus in which a plurality of photosensors arrayed in a primary scanning direction are scanned to produce readout signals. The plurality of photosensors are classified into a number of groups each including a predetermined number of the photosensors, wherein those photosensors occupying equivalently the same position in the different groups are combined in common. The outputs of the photosensors are sequentially and selectively scanned on a group basis to produce readout signal for each of the groups. To provide a scanning readout operation at an increased speed, an integrating circuit is provided for each of the photosensors exchangeably for each group. The outputs of all the photosensors belonging to a given one of the group are simultaneously supplied to the respective integrating circuits. The readout signal output is obtained by scanning sequentially the outputs of the integrating circuits.