摘要:
An electrostatic actuator comprises first and second movable sections and a stator. The stator has a hollow frame into which the movable sections are arranged independently. Driving electrodes are provided on surfaces of the movable sections and holding electrodes are also provided on the opposite surfaces pf the movable section. A driving electrode section is provided on the inner surface of the stator facing the driving electrodes on the movable section. Also, holding electrode sections are provided on the inner surface of the stator facing the holding electrodes on the movable section. Stripes of the electrodes are arranged in a longitudinal direction and each strip is extended in a lateral direction crossing the longitudinal direction, and the holding electrodes are extended in the longitudinal direction.
摘要:
An electrostatic actuator comprises first and second movable sections and a stator. The stator has a hollow frame into which the movable sections are arranged independently. Driving electrodes are provided on surfaces of the movable sections and holding electrodes are also provided on the opposite surfaces pf the movable section. A driving electrode section is provided on the inner surface of the stator facing the driving electrodes on the movable section. Also, holding electrode sections are provided on the inner surface of the stator facing the holding electrodes on the movable section. Stripes of the electrodes are arranged in a longitudinal direction and each strip is extended in a lateral direction crossing the longitudinal direction, and the holding electrodes are extended in the longitudinal direction.
摘要:
An electrostatic actuator comprises first and second movable sections and a stator. The stator has a hollow frame into which the movable sections are arranged independently. Driving electrodes are provided on surfaces of the movable sections and holding electrodes are also provided on the opposite surfaces pf the movable section. A driving electrode section is provided on the inner surface of the stator facing the driving electrodes on the movable section. Also, holding electrode sections are provided on the inner surface of the stator facing the holding electrodes on the movable section. Stripes of the electrodes are arranged in a longitudinal direction and each strip is extended in a lateral direction crossing the longitudinal direction, and the holding electrodes are extended in the longitudinal direction.
摘要:
A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要:
A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm−1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.
摘要:
A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要:
A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).
摘要:
A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要:
In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.
摘要:
For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.