公开(公告)号：US5456762A

公开(公告)日：1995-10-10

申请号：US171430

申请日：1993-12-22

申请人： Toshimitsu Kariya ,  Keishi Saito

发明人： Toshimitsu Kariya ,  Keishi Saito

IPC分类号： H01L27/00 ,  H01L31/036 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/10 ,  H01L31/105 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0368 ,  H01L31/0376

CPC分类号： H01L31/076 ,  H01L31/036 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1055 ,  H01L31/1812 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

摘要翻译： 本发明提供光电转换元件，其中提高了长波长灵敏度，填充因子和光电转换效率。 为了提供光劣化降低的光电转换元件，提高了场耐久性，提高了温度特性，由含有氢的非晶硅型半导体构成的p层，由含有氢的非晶硅锗型半导体构成的i层 氢并且还包括微晶锗，并且由含有氢的非晶硅型半导体构成的n层层叠在基板上，所述i层通过微波等离子体CVD在400〜600℃的基板温度下形成， 所述微晶锗的粒径为50-500埃。 此外，微晶锗的含量在层厚度方向上变化。

公开(公告)号：US5371380A

公开(公告)日：1994-12-06

申请号：US188731

申请日：1994-01-31

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/16 ,  H01L29/26 ,  H01L45/00

CPC分类号： H01L29/1604 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/263

摘要： A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), wherein said non-single crystalline semiconductor has an average radius of 3.5 .ANG. or less and a density of 1.times.10.sup.19 (cm.sup.-3) or less as for microvoids contained therein. The non-single crystalline semiconductor excels in semiconductor characteristics and adhesion with other materials and are effectively usable as a constituent element of various semiconductor devices.

摘要翻译： 含有选自硅原子（Si）和锗原子（Ge）作为基体的至少一种原子的非单晶半导体，以及选自氢原子中的至少一种原子（ H）和卤素原子（X），其中所述非单晶半导体的平均半径为3.5AANG或更小，密度为1×1019（cm-3）或更小，对于其中包含的微孔。 非单晶半导体具有优异的半导体特性和与其他材料的粘合性，并且可以有效地用作各种半导体器件的组成元件。

公开(公告)号：US5849108A

公开(公告)日：1998-12-15

申请号：US638501

申请日：1996-04-26

申请人： Toshimitsu Kariya ,  Keishi Saito

发明人： Toshimitsu Kariya ,  Keishi Saito

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0264 ,  H01L31/036 ,  H01L31/0392

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548

摘要： A photovoltaic element has a substrate with a conductive surface, a zinc oxide layer containing fluorine and a non-single-crystal semiconductor layer, where the fluorine content of the zinc oxide layer (i) varies across the thickness of the layer, (ii) is at a minimum at the interface with the substrate and (iii) increases toward the semiconductor layer.

摘要翻译： 光电元件具有导电表面的衬底，含氟的氧化锌层和非单晶半导体层，其中氧化锌层（i）的氟含量在层的厚度上变化，（ii） 在与衬底的界面处至少是最小的，并且（iii）朝着半导体层增加。

公开(公告)号：US5418680A

公开(公告)日：1995-05-23

申请号：US155655

申请日：1993-11-22

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/20 ,  H05F7/00

CPC分类号： H01L31/208 ,  H01L21/28 ,  H01L31/022466 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An apparatus for repairing a defective semiconductor device having an electrically short-circuited portion, wherein the semiconductor device includes a semiconductor thin film and a conductive thin film disposed in the named order on a conductive surface of a substrate and in which the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion so that the semiconductor device is defective. The apparatus includes a substrate holding unit for holding the substrate of the defective semiconductor device and an electrode arranged above the substrate holding unit so that, when the defective semiconductor is positioned on the substrate holding unit, there is a predetermined distance between the electrode and the conductive thin film of the defective semiconductor device, the electrode being capable of moving in relation to the substrate of the defective semiconductor device. The apparatus further includes a voltage applying unit for applying a desired voltage to the electrode, wherein discharge is caused between the electrode and the conductive thin film of the defective semiconductor device by applying a desired voltage to the electrode through the voltage applying means to thereby modify a region of the conductive thin film of the defective semiconductor device in electrical contact with the conductive surface of the substrate of the defective semiconductor device.

摘要翻译： 一种用于修复具有电短路部分的有缺陷的半导体器件的装置，其中所述半导体器件包括半导体薄膜和导电薄膜，所述半导体薄膜和导电薄膜按照所述顺序设置在衬底的导电表面上，并且其中导电薄膜和 衬底的导电表面在发生在半导体薄膜中的针孔处电短路以形成电短路部分，使得半导体器件有缺陷。 该装置包括用于保持有缺陷的半导体器件的衬底的衬底保持单元和布置在衬底保持单元上方的电极，使得当缺陷半导体位于衬底保持单元上时，电极和 有缺陷的半导体器件的导电薄膜，电极能够相对于有缺陷的半导体器件的衬底移动。 该装置还包括用于向电极施加期望电压的电压施加单元，其中通过施加期望的电压通过电压施加装置在电极和缺陷半导体器件的导电薄膜之间引起放电，从而修改 所述有缺陷的半导体器件的导电薄膜的区域与有缺陷的半导体器件的衬底的导电表面电接触。

公开(公告)号：US5284525A

公开(公告)日：1994-02-08

申请号：US806347

申请日：1991-12-13

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

IPC分类号： H01L31/0236 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/03921 ,  H01L31/0236 ,  H01L31/075 ,  Y02E10/548

摘要： A solar cell comprising a conductive substrate and semiconductor layers laminated on the conductive substrate, said laminate comprising a p-type layer composed of a non-single crystal Si material, an i-type layer serving as an active layer and an n-type layer, wherein a diamond layer having an uneven surface and containing a valence electron controlling agent is interposed between the conductive substrate and the semiconductor layers.

摘要翻译： 一种太阳能电池，包括导电基板和层叠在导电基板上的半导体层，所述层压体包括由非单晶Si材料构成的p型层，用作有源层的i型层和n型层 其中具有不平坦表面并含有价电子控制剂的金刚石层插入在导电基板和半导体层之间。

公开(公告)号：US6107116A

公开(公告)日：2000-08-22

申请号：US134929

申请日：1998-08-17

申请人： Toshimitsu Kariya ,  Keishi Saito

发明人： Toshimitsu Kariya ,  Keishi Saito

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  C23C14/34 ,  C23C14/08

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548

摘要： A photovoltaic element is formed by providing a substrate under vacuum; introducing a sputter gas and applying RF power to generate a plasma and provide a photovoltaic element having a substrate, a zinc oxide layer containing fluorine on the substrate, wherein a fluorine-containing zinc oxide layer is employed as a target.

摘要翻译： 通过在真空下提供衬底形成光电元件; 引入溅射气体并施加RF功率以产生等离子体，并提供具有衬底的光电元件，在衬底上含有氟的氧化锌层，其中使用含氟氧化锌层作为靶。

公开(公告)号：US5656098A

公开(公告)日：1997-08-12

申请号：US456403

申请日：1995-06-01

申请人： Nobuyuki Ishikawa ,  Keishi Saito ,  Soichiro Kawakami ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzo Kouda ,  Naoto Okada

发明人： Nobuyuki Ishikawa ,  Keishi Saito ,  Soichiro Kawakami ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzo Kouda ,  Naoto Okada

IPC分类号： H01L31/0216 ,  H01L31/048 ,  H01L31/052 ,  H01L31/075 ,  H01L31/04 ,  H01L31/18

CPC分类号： H01L31/073 ,  H01L31/02167 ,  H01L31/048 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/543 ,  Y02E10/548

摘要： A photovoltaic device has a semiconductor layer; electrodes and a surface protection layer adjacent to the light incident side. Granules of a material different from those of the surface protection layer are disposed in the surface protection layer. The granules in the surface protection layer have an average grain size of 0.001-20 microns, a surface density S from 0.2 to 0.9 and/or a density per volume from 0.001 to 0.5.To produce a surface protecting layer for a photovoltaic device in which the surface protecting layer has granules at a light incident side the surface of a photovoltaic device is painted with a liquid resin containing the granules.

摘要翻译： 光电器件具有半导体层; 电极和与光入射侧相邻的表面保护层。 与表面保护层不同的材料颗粒设置在表面保护层中。 表面保护层中的颗粒的平均粒度为0.001-20微米，表面密度S为0.2至0.9，和/或每体积密度为0.001至0.5。 为了制造其中表面保护层在光入射侧具有颗粒的光伏器件的表面保护层，光伏器件的表面被涂有含有颗粒的液体树脂。

公开(公告)号：US5599403A

公开(公告)日：1997-02-04

申请号：US489372

申请日：1995-06-12

申请人： Toshimitsu Kariya ,  Keishi Saito

发明人： Toshimitsu Kariya ,  Keishi Saito

IPC分类号： H01L27/00 ,  H01L31/036 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/10 ,  H01L31/105 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0368

CPC分类号： H01L31/076 ,  H01L31/036 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1055 ,  H01L31/1812 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

摘要翻译： 本发明提供光电转换元件，其中提高了长波长灵敏度，填充因子和光电转换效率。 为了提供光劣化降低的光电转换元件，提高了场耐久性，提高了温度特性，由含有氢的非晶硅型半导体构成的p层，由含有氢的非晶硅锗型半导体构成的i层 氢并且还包括微晶锗，并且由含有氢的非晶硅型半导体构成的n层层叠在基板上，所述i层通过微波等离子体CVD在400〜600℃的基板温度下形成， 所述微晶锗的粒径为50-500埃。 此外，微晶锗的含量在层厚度方向上变化。

公开(公告)号：US5439533A

公开(公告)日：1995-08-08

申请号：US337195

申请日：1994-11-07

申请人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

发明人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： An object of the present invention is to provide a photovoltaic device and a method of producing the photovoltaic device which can prevent recombination of photo-excited carriers and which permits increases in the open circuit voltage and the carrier range. The photovoltaic device of the present invention has a laminate structure composed of at least a p-type layer of a silicon non-single crystal semiconductor, a photoactive layer having a plurality of i-type layers, and an n-type layer. The photoactive layer has a laminate structure composed of a first i-type layer deposited on the side of the n-type layer by a microwave plasma CVD process, and a second i-type layer deposited on the side of said the p-type layer by an RF plasma CVD process. The first i-type layer deposited by the microwave plasma CVD process contains at least silicon and carbon atoms, and has a minimum band gap between the center thereof and the p-type layer, and the second i-type layer deposited by the RF plasma CVD process contains at least silicon atoms and has a thickness of 30 nm or less.

摘要翻译： 本发明的目的是提供一种能够防止光激发载流子复合并且允许开路电压和载流子范围增加的光电器件及其制造方法。 本发明的光电器件具有至少由非硅单晶半导体的p型层，具有多个i型层的光活性层和n型层构成的层叠结构。 光敏层具有由微波等离子体CVD工艺在n型层侧沉积的第一i型层和沉积在所述p型层侧的第二i型层构成的层叠结构 通过RF等离子体CVD工艺。 通过微波等离子体CVD法沉积的第一i型层至少包含硅和碳原子，并且在其中心和p型层之间具有最小的带隙，并且由RF等离子体沉积的第二i型层 CVD工艺至少含有硅原子，其厚度为30nm以下。

公开(公告)号：US5362684A

公开(公告)日：1994-11-08

申请号：US840537

申请日：1992-02-25

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/78 ,  H01L29/786 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10 ,  H01L31/20

CPC分类号： H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/931

摘要： A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5.ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.

摘要翻译： 非单晶碳化硅半导体包含碳原子，硅原子和氢原子和卤素原子中的至少一个，非单晶碳化硅半导体具有微孔密度为平均半径不超过3.5的微孔 不超过1×1019 cm-3。