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公开(公告)号：US5786659A
公开(公告)日：1998-07-28
申请号：US350027
申请日：1994-11-29
CPC分类号： H01J3/022 , H01J1/3042 , H01J2201/319
摘要： A field emission type electron source capable of permitting a resistance value between a cathode wiring and each of emitter cones to be set at substantially the same level and increasing packaging density of the emitter cones. The electron source includes stripe-like cathode wirings arranged on an insulating substrate. The cathode wirings each are formed with a plurality of windows, so that a plurality of island-like cathode conductors and resistance layers different in resistance value from each other are formed separate from the cathode wiring. Then, a resistance layer, an insulating layer and a gate electrode are formed thereon. The gate electrode and insulating layer are formed with apertures in a manner to be common to both, in which the emitter cones are arranged, resulting in emission of electrons from the emitter cones of each group unit being rendered uniform.
摘要翻译： 能够使阴极配线和各个发射极锥体之间的电阻值设定在基本相同的水平并增加发射锥体的封装密度的场致发射型电子源。 电子源包括布置在绝缘基板上的条状阴极布线。 阴极布线各自形成有多个窗口，使得与阴极布线分离地形成彼此电阻值不同的多个岛状阴极导体和电阻层。 然后，在其上形成电阻层，绝缘层和栅电极。 栅极电极和绝缘层以其中布置发射极锥体的共同方式形成有孔，导致来自每个组单元的发射极锥体的电子发射均匀。
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公开(公告)号：US5189341A
公开(公告)日：1993-02-23
申请号：US701027
申请日：1991-05-16
申请人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Toshinori Takagi
发明人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Toshinori Takagi
IPC分类号： H01J27/02 , H01J1/304 , H01J29/04 , H01J31/12 , H01J37/073
CPC分类号： H01J1/3042
摘要： An electron emitting element capable of preventing pollution of the emitter due to absorption of gas thereon, to thereby ensure stable emission of electrons over a long period of time even in a low vacuum atmosphere. The electron emitting element is constructed so as to permit a part of electrons emitted from one of emitters to impinge on the other of the emitters being ready for emission to clean it.
摘要翻译： 一种电子发射元件，其能够防止由于其上的气体吸收引起的发射体的污染，从而即使在低真空气氛中也能够长时间保证电子的稳定的发射。 电子发射元件被构造成允许从发射器之一发射的电子的一部分撞击准备发射的另一个发射器以将其清洁。
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公开(公告)号：US4451499A
公开(公告)日：1984-05-29
申请号：US403151
申请日：1982-07-29
IPC分类号： C23C14/06 , B01J19/08 , C01F3/02 , C04B35/08 , C23C14/00 , C23C14/08 , C23C14/32 , C23C14/56 , C30B25/02 , C30B25/06 , C30B28/12 , C30B28/14 , C30B29/16 , B05D5/12
CPC分类号： C30B25/06 , B01J19/088 , C01F3/02 , C04B35/08 , C23C14/0005 , C23C14/0021 , C23C14/32 , C30B25/02 , C30B29/16
摘要： A beryllium oxide (BeO) film is disclosed, which is produced by impinging partially ionized vapor of metal beryllium and oxygen upon a substrate.
摘要翻译： 公开了氧化铍（BeO）膜，其通过将金属铍和氧的部分电离蒸气撞击在基底上而制备。
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公开(公告)号：US4394210A
公开(公告)日：1983-07-19
申请号：US248212
申请日：1981-03-27
申请人： Kiyoshi Morimoto , Toshinori Takagi
发明人： Kiyoshi Morimoto , Toshinori Takagi
摘要： There is disclosed a process for forming a lead film by a cluster ion beam deposition which includes the step of impinging ionized and non-ionized neutral clusters having 100 to 2,000 atoms of vapor of lead loosely coupled by Van der Walls force upon a substrate within a vacuum chamber which is kept at about 10.sup.-2 Torr or less thereby forming the lead film thereon.
摘要翻译： 公开了一种用于通过聚簇离子束沉积形成引线膜的方法，该方法包括以下步骤：将具有100至2,000原子的由Van der Walls力松耦合的引线的电离和非离子化中性簇撞击在基底内 真空室保持在约10-2乇或更低，从而在其上形成引线膜。
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5.发明授权
公开(公告)号：US4217855A
公开(公告)日：1980-08-19
申请号：US11917
申请日：1979-02-13
申请人： Toshinori Takagi
发明人： Toshinori Takagi
CPC分类号： C23C14/221
摘要： The present ion source called "Vaporized-Metal Cluster Ion Source" is adapted to produce ionized vapor aggregate (ionized cluster) instead of atomic or molecular ions in conventional ion sources. Clusters consisting of 10.sup.2 -10.sup.3 atoms are formed by the adiabatic expansion due to the ejection into a high vacuum region through a nozzle of a heated crucible and ionized by electron bombardment. By "Ionized-Cluster Beam Deposition" using the ion source, fine-quality deposited films of many kinds of materials can be obtained on metal, semiconductor and insulator substrate with strong adhesion and with a fairly high deposition rate.
摘要翻译： 称为“蒸发金属簇离子源”的本离子源适于在常规离子源中产生电离蒸气聚集体（电离簇），而不是原子或分子离子。 由102-103个原子构成的簇由于通过加热的坩埚的喷嘴喷射到高真空区域并通过电子轰击而电离而通过绝热膨胀形成。 通过使用离子源的“离子束聚束光沉积”，可以在金属，半导体和绝缘体基板上获得具有强粘附性和相当高的沉积速率的精细质量的多种材料沉积膜。
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公开(公告)号：US4139857A
公开(公告)日：1979-02-13
申请号：US705696
申请日：1976-07-15
CPC分类号： H01L21/0242 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L29/04 , H01L31/07 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.
摘要翻译： 一种肖特基势垒型固体元素及其制造方法，肖特基势垒型固体元素包括由金属板和设置在金属板上的半导体膜层构成的肖特基势垒型元件部，金属板 由能够在其与半导体膜层之间形成肖特基势垒的金属形成，并且设置在半导体膜层的外表面上以便与其形成欧姆接触的半导体侧端子电极，其中至少 半导体膜层由所谓的离子束聚束束沉积工艺形成。
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公开(公告)号：US4082636A
公开(公告)日：1978-04-04
申请号：US648296
申请日：1976-01-12
申请人： Toshinori Takagi
发明人： Toshinori Takagi
CPC分类号： C23C14/32 , Y10S148/045 , Y10S148/169
摘要： In atomistic film deposition processes employing ion plating technology, an ion source is provided which includes a filament, an ionization electrode and an ion acceleration electrode. The voltage relationships between these electrodes are altered so as to form many kinds of fine-quality deposited films in a multi-layer fashion.
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公开(公告)号：US3967125A
公开(公告)日：1976-06-29
申请号：US552607
申请日：1975-02-24
CPC分类号： H01J37/317 , C09K11/00
摘要： A method of preparing a phosphor by injection of activator ions which become luminescent centers into crystals of a base material of the phosphor comprising the steps of generating ions of an activator, accelerating the activator ions by giving kinetic energy thereto, irradiating and injecting the accelerated activator ions into the base material, and agitating the base material.An apparatus for preparing phosphor according to the method of the invention comprises an activator ion source section having an ion generating section for generating activator ions and an ion accelerating electrode section for accelerating and irradiating the generated activator ions into the base material of the phosphor, a base activating vessel section having an agitating means for containing the base material of the phosphor and for continuously circulating the same therein in order to uniformly irradiate the accelerated activator ions into the base material of the phosphor, and a vacuum system for providing a low-pressure atmosphere at least to the activator ion source section and the base activating vessel section.
摘要翻译： 通过注入成为发光中心的活化剂离子的荧光体的制备方法，该荧光体成为荧光体的基材的晶体，包括以下步骤：产生活化剂的离子，通过向其施加动能来加速活化剂离子，照射和注入加速的活化剂 离子进入基材，并搅拌基材。
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9.发明申请Vacuum Deposition Method and Sealed-Type Evaporation Source Apparatus for Vacuum Deposition 审中-公开真空沉积法和真空沉积密封型蒸发源装置公开(公告)号：US20070281081A1
公开(公告)日：2007-12-06
申请号：US10586400
申请日：2005-01-21
申请人： Hiroki Nakamura , Toshinori Takagi
发明人： Hiroki Nakamura , Toshinori Takagi
IPC分类号： C23C14/24
CPC分类号： C23C14/24 , C23C14/246 , C30B23/066
摘要： A vacuum deposition method is provided. In the vacuum deposition for evaporating a sublimation evaporation material, the gas sealed-type heating container 11 has the blast aperture 14 and an area for evaporating the evaporation material by the radiation heat from the inner surface thereof. The holder 15 holds an evaporation material in a region in which the evaporation material does not evaluate due to the heat transferred from the heating container 11. Thus, the generated vapor is emitted from the blast aperture 14 into the deposition subject surface outside the container.
摘要翻译： 提供真空沉积方法。 在用于蒸发升华蒸发材料的真空沉积中，气体密封型加热容器11具有鼓风孔14和用于通过来自其内表面的辐射热蒸发蒸发材料的区域。 保持器15由于从加热容器11传递的热量在蒸发材料不能评估的区域中保持蒸发材料。 因此，产生的蒸汽从鼓风孔14发射到容器外部的沉积物体表面。
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公开(公告)号：US4638217A
公开(公告)日：1987-01-20
申请号：US476470
申请日：1983-03-18
申请人： Masao Okubo , Kiyoshi Sugaya , Toshinori Takagi , Junzo Ishikawa
发明人： Masao Okubo , Kiyoshi Sugaya , Toshinori Takagi , Junzo Ishikawa
CPC分类号： H01J27/26
摘要： An ion source having a sintered metal head for ionizing various substances is disclosed. This ion source comprises a container made of a material which has a higher fusing point than that of the substance which is to be ionized, and a tip formed of a molded sintered metal of a higher fusing point than that of the substance which is to be ionized. The head is formed into a nearly conical shape and has a porosity capable of allowing the substance which is to be ionized to infiltrate therethrough in the molten state and the tip of the head is positioned at the opening of one end of the container for the ionizable material and arranged in such a manner that it protrudes beyond the end of the container.
摘要翻译： 公开了一种具有用于电离各种物质的烧结金属头的离子源。 该离子源包括由与要离子化的物质相比具有更高熔点的材料制成的容器，以及由与要物质相同的物质的熔点高的成型烧结金属形成的尖端 电离。 头部形成为近似圆锥形的形状，并且具有能够使被离子化的物质在熔融状态下渗透的孔隙，并且头部的顶端位于容器的一端的开口处，用于可离子化 材料并且以使其突出超过容器的端部的方式布置。
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