公开(公告)号：US20090012054A1

公开(公告)日：2009-01-08

申请号：US12280419

申请日：2007-03-16

申请人： Toshio Yamanaka ,  Ayako Toda ,  Hidenori Ohki ,  Shinya Okuda ,  Kohji Kawabata ,  Kenji Murano ,  Kazuo Hatano ,  Shinobu Takeda ,  Toru Nakai ,  Masaru Oogaki ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh

发明人： Toshio Yamanaka ,  Ayako Toda ,  Hidenori Ohki ,  Shinya Okuda ,  Kohji Kawabata ,  Kenji Murano ,  Kazuo Hatano ,  Shinobu Takeda ,  Toru Nakai ,  Masaru Oogaki ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh

IPC分类号： A61K31/546 ,  C07D501/16 ,  A61P31/00

CPC分类号： C07D501/46

摘要： The present invention provides a compound of the formula [I]: wherein R1 is lower alkyl, etc. and R2 is hydrogen, etc., or R1 and R2 are bonded together to form lower alkylene; R3 is a group represented by wherein R6 and R7 are independently optionally protected amino, etc.; m and n are independently an integer of 0 to 6; R8 and R9 are independently optionally protected amino, etc., and q and r are independently an integer of 0 to 6, or R8 and R9, together with the adjacent alkylene(s) and the nitrogen atom, form saturated nitrogen-containing heterocycle optionally having substituent(s); R4 is lower alkyl, etc.; and R5 is amino, etc., or a pharmaceutically acceptable salt thereof.

摘要翻译： 本发明提供式[I]化合物：其中R1是低级烷基等，R2是氢等，或者R1和R2键合在一起形成低级亚烷基; R3是由R6和R7独立地是任意保护的氨基等表示的基团。 m和n分别为0〜6的整数。 R8和R9独立地是任选被保护的氨基等，q和r独立地是0-6的整数，或者R8和R9与相邻的亚烷基和氮原子一起形成饱和的含氮杂环， 具有取代基; R4是低级烷基等; R5为氨基等，或其药学上可接受的盐。

公开(公告)号：US07192943B2

公开(公告)日：2007-03-20

申请号：US10942916

申请日：2004-09-17

申请人： Toshio Yamanaka ,  Kenji Murano ,  Ayako Toda ,  Hidenori Ohki ,  Masaru Oogaki ,  Shinya Okuda ,  Kohji Kawabata ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh ,  Kenji Sato

发明人： Toshio Yamanaka ,  Kenji Murano ,  Ayako Toda ,  Hidenori Ohki ,  Masaru Oogaki ,  Shinya Okuda ,  Kohji Kawabata ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh ,  Kenji Sato

IPC分类号： C07D501/46 ,  A61K31/546 ,  A61P31/04

CPC分类号： C07D501/00 ,  Y02P20/55

摘要： The present invention relates to a compound of the formula [I]: wherein R1 is lower alkyl or hydroxy(lower)alkyl, and R2 is hydrogen or amino protecting group, or R1 and R2 are bonded together and form lower alkylene; R is -A-R6 wherein A is bond, —NHCO—(CH2CO)n—, lower alkylene, —NH—CO—CO— or the like, and R6 is wherein R7, R8, R9 and R10 are independently amino, guanidino, amidino or the like; R4 is carboxy or protected carboxy; and R5 is amino or protected amino, or a pharmaceutically acceptable salt thereof, a process for preparing a compound of the formula [I], and a pharmaceutical composition comprising a compound of the formula [I] in admixture with a pharmaceutically acceptable carrier.

摘要翻译： 本发明涉及式[I]化合物：其中R 1是低级烷基或羟基（低级）烷基，R 2是氢或氨基保护基 或R 1和R 2结合在一起形成低级亚烷基; R为-AR 6，其中A为键，-NHCO-（CH 2 CO 2）n - ，低级亚烷基，-NH-CO- CO-等，并且R 6是其中R 7，R 8，R 9和R 9， 胍基10是独立的氨基，胍基，脒基等; R 4是羧基或被保护的羧基; 和R 5是氨基或被保护的氨基或其药学上可接受的盐，制备式[I]化合物的方法，以及药物组合物，其包含式[I]化合物 与药学上可接受的载体混合。

公开(公告)号：US20050096306A1

公开(公告)日：2005-05-05

申请号：US10942916

申请日：2004-09-17

申请人： Toshio Yamanaka ,  Kenji Murano ,  Ayako Toda ,  Hidenori Ohki ,  Masaru Oogaki ,  Shinya Okuda ,  Kohji Kawabata ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh ,  Kenji Sato

发明人： Toshio Yamanaka ,  Kenji Murano ,  Ayako Toda ,  Hidenori Ohki ,  Masaru Oogaki ,  Shinya Okuda ,  Kohji Kawabata ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh ,  Kenji Sato

IPC分类号： A61K31/546 ,  C07D501/00 ,  A61K31/545 ,  C07D501/14

CPC分类号： C07D501/00 ,  Y02P20/55

摘要： The present invention relates to a compound of the formula [I]: wherein R1 is lower alkyl or hydroxy(lower)alkyl, and R2 is hydrogen or amino protecting group, or R1 and R2 are bonded together and form lower alkylene; R is -A-R6 wherein A is bond, —NHCO—(CH2CO)n—, lower alkylene, —NH—CO—CO— or the like, and R6 is wherein R7, R8, R9 and R10 are independently amino, guanidino, amidino or the like; R4 is carboxy or protected carboxy; and R5 is amino or protected amino, or a pharmaceutically acceptable salt thereof, a process for preparing a compound of the formula [I], and a pharmaceutical composition comprising a compound of the formula [I] in admixture with a pharmaceutically acceptable carrier.

摘要翻译： 本发明涉及式[I]化合物：其中R 1是低级烷基或羟基（低级）烷基，R 2是氢或氨基保护基 或R 1和R 2结合在一起形成低级亚烷基; R为-AR 6，其中A为键，-NHCO-（CH 2 CO 2）n - ，低级亚烷基，-NH-CO- CO-等，并且R 6是其中R 7，R 8，R 9和R 9， 胍基10是独立的氨基，胍基，脒基等; R 4是羧基或被保护的羧基; 和R 5是氨基或被保护的氨基或其药学上可接受的盐，制备式[I]化合物的方法，以及药物组合物，其包含式[I]化合物 与药学上可接受的载体混合。

公开(公告)号：US20050004094A1

公开(公告)日：2005-01-06

申请号：US10833088

申请日：2004-04-28

申请人： Toshio Yamanaka ,  Hidenori Ohki ,  Masaru Ohgaki ,  Shinya Okuda ,  Ayako Toda ,  Kohji Kawabata ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh ,  Kenji Satoh

发明人： Toshio Yamanaka ,  Hidenori Ohki ,  Masaru Ohgaki ,  Shinya Okuda ,  Ayako Toda ,  Kohji Kawabata ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh ,  Kenji Satoh

IPC分类号： A61P31/04 ,  C07D501/00 ,  C07D501/14 ,  C07D501/46 ,  A61K31/545

CPC分类号： C07D501/00

摘要： The present invention relates to a compound of the formula [I]: wherein R1 is lower alkyl which may have suitable substituent(s), R2 is amino, protected amino or guanidino, R3 is carboxy or protected carboxy, R4 is amino or protected amino, and A is lower alkylene, or a pharmaceutically acceptable salt thereof, a process for preparing a compound of the formula [I], and a pharmaceutical composition comprising a compound of the formula [I] in admixture with a pharmaceutically acceptable carrier.

摘要翻译： 本发明涉及式[I]化合物：其中R 1为可具有合适取代基的低级烷基，R 2为氨基，保护的氨基或胍基，R 3为羧基或 保护的羧基，R 4是氨基或被保护的氨基，A是低级亚烷基或其药学上可接受的盐，制备式[I]化合物的方法，以及药物组合物，其包含式[ I]与药学上可接受的载体混合。

公开(公告)号：US07129232B2

公开(公告)日：2006-10-31

申请号：US10695895

申请日：2003-10-30

申请人： Hidenori Ohki ,  Shinya Okuda ,  Toshio Yamanaka ,  Masaru Ohgaki ,  Ayako Toda ,  Kohji Kawabata ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh ,  Kenji Satoh

发明人： Hidenori Ohki ,  Shinya Okuda ,  Toshio Yamanaka ,  Masaru Ohgaki ,  Ayako Toda ,  Kohji Kawabata ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh ,  Kenji Satoh

IPC分类号： C07D501/46 ,  C07D501/38 ,  A61K31/546 ,  A61P31/04

CPC分类号： C07D501/00 ,  Y02P20/55

摘要： The present invention relates to a compound of the formula [I]: wherein R1 is lower alkyl, hydroxy(lower)alkyl or halo(lower)alkyl, and R2 is hydrogen or amino protecting group, or R1 and R2 are bonded together and form lower alkylene or lower alkenylene; R3 is hydrogen or lower alkyl; R4 is R5 is carboxy or protected carboxy; and R6 is amino or protected amino, or a pharmaceutically acceptable salt thereof, a process for preparing a compound of the formula [I], and a pharmaceutical composition comprising a compound of the formula [I] in admixture with a pharmaceutically acceptable carrier.

摘要翻译： 本发明涉及式[I]化合物：其中R 1是低级烷基，羟基（低级）烷基或卤代（低级）烷基，R 2是 是氢或氨基保护基，或R 1和R 2结合在一起形成低级亚烷基或低级亚烯基; R 3是氢或低级烷基; R 4是R 5是羧基或被保护的羧基; 和R 6是氨基或被保护的氨基或其药学上可接受的盐，制备式[I]化合物的方法，以及药物组合物，其包含式[I]化合物 与药学上可接受的载体混合。

公开(公告)号：US20070037786A1

公开(公告)日：2007-02-15

申请号：US11585262

申请日：2006-10-24

申请人： Hidenori Ohki ,  Shinya Okuda ,  Toshio Yamanaka ,  Masaru Ohgaki ,  Ayako Toda ,  Kohji Kawabata ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh ,  Kenji Satoh

发明人： Hidenori Ohki ,  Shinya Okuda ,  Toshio Yamanaka ,  Masaru Ohgaki ,  Ayako Toda ,  Kohji Kawabata ,  Satoshi Inoue ,  Keiji Misumi ,  Kenji Itoh ,  Kenji Satoh

IPC分类号： A61K31/545 ,  C07D501/14

CPC分类号： C07D501/00 ,  Y02P20/55

摘要： The present invention relates to a compound of the formula [I]: wherein R1 is lower alkyl, hydroxy(lower)alkyl or halo(lower)alkyl, and R2 is hydrogen or amino protecting group, or R1 and R2 are bonded together and form lower alkylene or lower alkenylene; R3 is hydrogen or lower alkyl; R4 is R5 is carboxy or protected carboxy; and R6 is amino or protected amino, or a pharmaceutically acceptable salt thereof, a process for preparing a compound of the formula [I], and a pharmaceutical composition comprising a compound of the formula [I] in admixture with a pharmaceutically acceptable carrier.

摘要翻译： 本发明涉及式[I]化合物：其中R 1是低级烷基，羟基（低级）烷基或卤代（低级）烷基，R 2是 是氢或氨基保护基，或R 1和R 2结合在一起形成低级亚烷基或低级亚烯基; R 3是氢或低级烷基; R 4是R 5是羧基或被保护的羧基; 和R 6是氨基或保护的氨基或其药学上可接受的盐，制备式[I]化合物的方法，以及药物组合物，其包含式[I]化合物 与药学上可接受的载体混合。

公开(公告)号：US09580791B2

公开(公告)日：2017-02-28

申请号：US13697164

申请日：2011-04-26

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

IPC分类号： C23C16/04 ,  H05B33/10 ,  C23C14/04 ,  B05C21/00 ,  H01L51/00 ,  H01L51/50

CPC分类号： C23C14/042 ,  B05C21/005 ,  H01L51/0011 ,  H01L51/50

摘要： A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.

摘要翻译： 蒸镀掩模（70）依次包括第一层（71），第二层（72）和第三层（73）。 多个第一开口（71h），多个第二开口（72h）和多个第三开口（73h）分别形成在第一层，第二层和第三层中。 第一开口，第二开口和第三开口彼此连通，从而构成掩模开口（75）。 第二开口的开口尺寸大于第一开口的开口尺寸，并且大于第三开口的开口尺寸。 利用这种构造，可以防止由于气相沉积颗粒粘附到掩模开口而导致的掩模开口的开口尺寸的减小或掩模开口的堵塞。

公开(公告)号：US09391275B2

公开(公告)日：2016-07-12

申请号：US13703873

申请日：2011-08-17

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C16/00 ,  H01L51/00 ,  C23C14/04 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0008 ,  C23C14/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of control plates (80) and a vapor deposition mask (70) are disposed in this order. A substrate (10) is moved relative to the vapor deposition mask in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval. Vapor deposition particles (91) discharged from a vapor deposition source opening (61) of the vapor deposition source pass through neighboring inter-control plate spaces (81) and mask openings (71) formed in the vapor deposition mask, and then adhere to the substrate to form a coating film (90). At least a part of the coating film is formed by the vapor deposition particles that have passed through two or more different inter-control plate spaces. It is thereby possible to form a coating film in which edge blur and variations in the thickness are suppressed.

摘要翻译： 蒸镀源（60），多个控制板（80）和蒸镀掩模（70）依次配置。 在基板和气相沉积掩模以固定间隔间隔开的状态下，基板（10）相对于气相沉积掩模移动。 从气相沉积源的气相沉积源开口（61）排出的气相沉积颗粒（91）通过相邻的控制板间隙（81）和形成在气相沉积掩模中的掩模开口（71），然后粘附到 基板以形成涂膜（90）。 涂膜的至少一部分由已经通过两个或更多个不同的控制间隙的气相沉积颗粒形成。 由此，可以形成抑制边缘模糊和厚度变化的涂膜。

公开(公告)号：US08845808B2

公开(公告)日：2014-09-30

申请号：US13997173

申请日：2011-12-19

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： C23C14/26 ,  C23C16/448 ,  H05B33/10 ,  C23C14/24 ,  H01L21/02 ,  H01L51/00 ,  H01L51/56

CPC分类号： C23C16/45578 ,  C23C14/24 ,  C23C14/243 ,  H01L21/02263 ,  H01L51/001 ,  H01L51/56 ,  H05B33/10

摘要： A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a vapor deposition source (80) that has an injection hole (81) from which vapor deposition particles are injected, a vapor deposition particle crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80), and a rotation motor (86) for changing a distribution of the injection amount of the vapor deposition particles by rotating the vapor deposition source (80).

摘要翻译： 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，所述蒸镀装置具有：蒸镀源（80），具有喷射孔 ），用于将气相沉积粒子供给到气相沉积源（80）的气相沉积粒子坩埚（82）和用于改变蒸汽喷射量分布的旋转马达（86） 通过旋转气相沉积源（80）来沉积颗粒。

公开(公告)号：US08673082B2

公开(公告)日：2014-03-18

申请号：US13980875

申请日：2012-01-13

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC分类号： C23C16/00

CPC分类号： C23C16/448 ,  C23C14/243 ,  C23C16/042 ,  G03B37/06 ,  H01L51/0008

摘要： A crucible (50) of the present invention includes: an opening (55a) from which vapor deposition particles are injected toward a film formation substrate on which a film is to be formed; a focal point member (54a), provided so as to face the opening (55a), which reflects vapor deposition particles injected from the opening (55a); and a revolution paraboloid (55b) which reflects, toward the film formation substrate, vapor deposition particles which have been reflected by the focal point member (54a).

摘要翻译： 本发明的坩埚（50）包括：朝向要在其上形成膜的成膜基板上注入蒸镀颗粒的开口（55a） 设置成面对开口（55a）的焦点部件（54a），其反射从开口（55a）喷射的气相沉积粒子; 以及向所述成膜基板反射已被所述焦点部件（54a）反射的气相沉积粒子的旋转抛物面（55b）。