公开(公告)号：US20060088072A1

公开(公告)日：2006-04-27

申请号：US11255932

申请日：2005-10-24

申请人： Toshiro Hayakawa ,  Hideki Asano ,  Shinichi Nagahama ,  Yuji Matsuyama ,  Katsutoshi Komoto

发明人： Toshiro Hayakawa ,  Hideki Asano ,  Shinichi Nagahama ,  Yuji Matsuyama ,  Katsutoshi Komoto

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/34333

摘要： A GaN system stripe type semiconductor laser having an index guiding structure, and producing higher mode or multimode oscillation in the transverse mode, which is constructed such that the horizontal beam radiation angle of each of a plurality of the emitting regions is minimized to provide a high luminance focused beam. In a GaN system stripe type semiconductor laser, which has an index guiding structure constituted, for example, by a ridge structure formed on a p-GaN cap layer 28 and p-Al0.1Ga0.9N clad layer 27 with the width W2, and produces higher mode or multimode oscillation in the transverse mode, the effective index difference Δn between the central region of the stripe and outside of the stripe is set not greater than 1.5×10−2.

摘要翻译： 一种具有折射率引导结构的GaN系带条型半导体激光器，在横模中产生较高模式或多模振荡，其结构使得多个发射区域中的每一个的水平射束辐射角最小化以提供高 亮度聚焦光束。 在GaN系带状半导体激光器中，其具有例如由p-GaN覆盖层28和p-Al 0.1 Ga 0.9形成的脊结构构成的折射引导结构 具有宽度W 2的N包覆层27，并且在横向模式中产生较高模式或多模式振荡，条纹的中心区域和条纹外部之间的有效折射率差Deltan被设置为不大于1.5×10 ^{-2 。}