公开(公告)号：US07846820B2

公开(公告)日：2010-12-07

申请号：US11568336

申请日：2005-04-20

申请人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Toshitaka Shimamoto ,  Yoshiaki Hasegawa ,  Yasutoshi Kawaguchi ,  Isao Kidoguchi

发明人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Toshitaka Shimamoto ,  Yoshiaki Hasegawa ,  Yasutoshi Kawaguchi ,  Isao Kidoguchi

IPC分类号： H01L21/36

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3216 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C) of selectively growing AlxGayInzN crystals (0≦x, y, z≦1: x+y+z=1) 104 on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx′Gay′Inz′N crystal (0≦x′, y′, z′≦1:x′+y′+z′=1) 106 on the AlxGayInzN crystals 104, the Alx′Gay′Inz′N crystal 106 containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals 104 with the Alx′Gay′Inz′N crystal 106 to form one nitride semiconductor layer 120.

摘要翻译： 根据本发明的制造氮化物半导体的方法包括：提供n-GaN衬底101的步骤（A）; 在基板101上形成具有平行于基板101的主面的上表面的多个条纹脊的步骤（B）; 在多个条纹脊的上表面上选择性地生长Al x Ga y In z N晶体（0＆nlE; x，y，z＆nlE; 1：x + y + z = 1）104的步骤（C），含有n型杂质的Al x Ga y In z N晶体 第一集中; 以及在Al x Ga y In z N晶体104上生长Al x Ga Ga y In z N晶体（0＆amp; nlE; x'，y'，z'＆nlE; 1：x'+ y'+ z'= 1）106的步骤（D） Alx'Gay'Inz'N晶体106，其含有低于第一浓度的第二浓度的n型杂质，并且将每两个相邻的Al x Ga y In z N晶体104与Al x Ga y In z N晶体106连接以形成一个氮化物 半导体层120。

公开(公告)号：US07704860B2

公开(公告)日：2010-04-27

申请号：US10597575

申请日：2005-11-15

申请人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L21/20

CPC分类号： H01S5/22 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01S5/32341 ,  H01S2304/12

摘要： A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.

摘要翻译： 根据本发明的氮化物基半导体器件包括支撑在具有导电性的衬底结构101上的半导体多层结构。 衬底结构101的主表面具有至少一个垂直生长区，其起垂直生长氮化物基半导体的晶种的作用，以及用于允许在其上生长的氮化物基半导体的多个横向生长区 垂直生长区域横向生长。 在箭头A所示的方向上测量的垂直生长区域的各自尺寸的总和＆Sgr X以及在相同方向上测量的横向生长区域的各自尺寸的总和＆Sgr; Y满足不等式＆lt; Sgr; X /＆S; Y> 1.0。

公开(公告)号：US20080272462A1

公开(公告)日：2008-11-06

申请号：US10597575

申请日：2005-11-15

申请人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L21/20 ,  H01L29/201

CPC分类号： H01S5/22 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01S5/32341 ,  H01S2304/12

摘要： A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.

摘要翻译： 根据本发明的氮化物基半导体器件包括支撑在具有导电性的衬底结构101上的半导体多层结构。 衬底结构101的主表面具有至少一个垂直生长区，其起垂直生长氮化物基半导体的晶种的作用，以及用于允许在其上生长的氮化物基半导体的多个横向生长区 垂直生长区域横向生长。 在箭头A所指的方向上测量的垂直生长区域的各自尺寸的大小和在相同方向上测量的横向生长区域的各自尺寸的总和SigmaY的和ΣX满足SigmaX / SigmaY> 1.0的不等式。

公开(公告)号：US20070217460A1

公开(公告)日：2007-09-20

申请号：US11568336

申请日：2005-04-20

申请人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Toshitaka Shimamoto ,  Yoshiaki Hasegawa ,  Yasutoshi Kawaguchi ,  Isao Kidoguchi

发明人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Toshitaka Shimamoto ,  Yoshiaki Hasegawa ,  Yasutoshi Kawaguchi ,  Isao Kidoguchi

IPC分类号： H01S5/30 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3216 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C) of selectively growing AlxGayInzN crystals (0≦x, y, z≦1: x+y+z=1) 104 on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx′Gay′Inz′N crystal (0≦x′, y′, z′≦1: x′+y′+z′=1) 106 on the AlxGayInzN crystals 104, the Alx′Gay′Inz′N crystal 106 containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals 104 with the Alx′Gay′Inz′N crystal 106 to form one nitride semiconductor layer 120.

摘要翻译： 根据本发明的制造氮化物半导体的方法包括：提供n-GaN衬底101的步骤（A）; 在基板101上形成具有平行于基板101的主面的上表面的多个条纹脊的步骤（B）; 选择性地生长Al x N晶体的步骤（C）（0≤x，y，z <= 1：x + y + z = 1）104，在多个条纹脊的上表面上，含有N，N，N， 第一浓度的n型杂质; 和步骤（D），生长Al 2 O 3 / （0 <= x'，y'，z'<= 1：x'）。 + y'+ z'= 1）106在Al x N y晶体104中，Al x x < 包含低于第一浓度的第二浓度的n型杂质，并且连接每两个相邻的Al x x的子晶体106 在具有Al x Si 2 O 3的N z晶体104中，Ga 3+ 在＆lt; SUB＆gt;＆lt; SUB＆gt;＆lt; / SUB＆gt;＆lt;＆lt;＆lt; 形成一个氮化物半导体层120。

公开(公告)号：US20070290230A1

公开(公告)日：2007-12-20

申请号：US10573211

申请日：2004-09-24

申请人： Yasutoshi Kawaguchi ,  Toshitaka Shimamoto ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Yasutoshi Kawaguchi ,  Toshitaka Shimamoto ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01S5/3215 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3077 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

摘要翻译： 根据本发明的氮化物半导体器件包括p型氮化物半导体层，n型氮化物半导体层和介于p型氮化物半导体层和n型氮化物半导体层之间的有源层。 p型氮化物半导体层包括：含有Al和Mg的第一p型氮化物半导体层; 以及包含Mg的第二p型氮化物半导体层。 第一p型氮化物半导体层位于有源层和第二p型氮化物半导体层之间，第二p型氮化物半导体层的带隙比第一p型氮化物半导体层的带隙大 层。

公开(公告)号：US07160748B2

公开(公告)日：2007-01-09

申请号：US11063533

申请日：2005-02-24

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

摘要翻译： 本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。 步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

公开(公告)号：US20050142682A1

公开(公告)日：2005-06-30

申请号：US11063533

申请日：2005-02-24

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01S5/30 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00 ,  H01L21/336

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

公开(公告)号：US06921678B2

公开(公告)日：2005-07-26

申请号：US10434063

申请日：2003-05-09

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01S5/30 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/223

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

摘要翻译： 本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。 步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

公开(公告)号：US06586774B2

公开(公告)日：2003-07-01

申请号：US10021006

申请日：2001-12-19

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01L2906

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

公开(公告)号：US20060239321A1

公开(公告)日：2006-10-26

申请号：US11327405

申请日：2006-01-09

申请人： Masahiro Kume ,  Toshitaka Shimamoto ,  Isao Kidoguchi ,  Tomoaki Uno

发明人： Masahiro Kume ,  Toshitaka Shimamoto ,  Isao Kidoguchi ,  Tomoaki Uno

IPC分类号： H01S5/00

CPC分类号： H01S5/4031 ,  B82Y20/00 ,  G11B7/1275 ,  G11B2007/0006 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/162 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/3436 ,  H01S5/4087

摘要： A semiconductor laser device includes a first semiconductor laser element for emitting a first laser light having a first oscillation wavelength of λ1 and a second semiconductor laser element for emitting a second laser light having a second oscillation wavelength of λ2 (wherein λ2≧λ1), which are formed on a single substrate. A first dielectric film which has a refractive index of n1 with respect to a wavelength λ between the first oscillation wavelength λ1 and the second oscillation wavelength λ2 and has a film thickness of approximately λ/(8n1) is formed at light emitting facets in the first semiconductor laser element and the second semiconductor laser element, from which the laser lights are emitted, and a second dielectric film having a refractive index of n2 and a film thickness of λ/(8n2) are formed on the first dielectric film.

摘要翻译： 半导体激光器件包括用于发射具有第一振荡波长λ1的第一激光的第一半导体激光元件和用于发射具有第二振荡波长λ的第二激光元件的第二半导体激光元件 其中形成在单个衬底上的第二层（其中λ2