公开(公告)号：US20100239482A1

公开(公告)日：2010-09-23

申请号：US12725577

申请日：2010-03-17

申请人： Toshiya TAKAHASHI ,  Kouji TONOHARA ,  Shinsuke TAKAHASHI

发明人： Toshiya TAKAHASHI ,  Kouji TONOHARA ,  Shinsuke TAKAHASHI

IPC分类号： C23C16/513 ,  C23C16/32 ,  C23C16/52 ,  C23C16/34 ,  C23C16/36 ,  B32B9/00 ,  C01B21/068 ,  C01B31/36 ,  C01B33/00

CPC分类号： H05B33/04 ,  C23C16/345 ,  C23C16/50 ,  C23C16/545 ,  H01L51/5253 ,  H01L51/5256 ,  H01L2251/5338

摘要： A method according to the invention comprises: starting plasma discharge for forming the gas barrier layer in a film deposition chamber; and producing the gas barrier layer by using a plasma after a first predetermined period of time has elapsed from a start of the plasma discharge.

摘要翻译： 根据本发明的方法包括：在成膜室中开始形成阻气层的等离子体放电; 并且在从等离子体放电开始经过第一预定时间段之后通过使用等离子体产生阻气层。

公开(公告)号：US20110041765A1

公开(公告)日：2011-02-24

申请号：US12862213

申请日：2010-08-24

申请人： Tatsuya FUJINAMI ,  Shinsuke TAKAHASHI ,  Kouji TONOHARA ,  Jun FUJINAWA

发明人： Tatsuya FUJINAMI ,  Shinsuke TAKAHASHI ,  Kouji TONOHARA ,  Jun FUJINAWA

IPC分类号： C23C16/52

CPC分类号： C23C16/545 ,  C23C16/45519

摘要： The film deposition device includes a CVD film forming room disposed on a travel path of a substrate and having a function of performing the film deposition on a substrate by CVD, a treatment room disposed upstream or downstream of the CVD film forming room on the travel path and having a function of performing a predetermined treatment on the substrate, and a differential room disposed between and communicating with the CVD film forming room and the treatment room. The differential room includes a evacuation unit, a gas introducing unit for introducing at least one of a gas to be supplied to both of the CVD film forming room and the treatment room, and an inert gas, and a controller which controls the evacuation unit and the gas introducing unit to keep the differential room at a higher pressure than the CVD film forming room and the treatment room.

摘要翻译： 该膜沉积装置包括设置在基板的行进路径上并具有通过CVD在基板上进行膜沉积的功能的CVD成膜室，设置在行进路径上的CVD成膜室的上游或下游的处理室 并且具有对基板进行预定处理的功能，以及设置在CVD成膜室和处理室之间并与其连通的差动室。 差速室包括排气单元，用于引入要供应到CVD成膜室和处理室的气体中的至少一种的气体引入单元和惰性气体，以及控制排气单元和 该气体导入单元将差压室保持在比CVD成膜室和处理室更高的压力。

公开(公告)号：US20110064890A1

公开(公告)日：2011-03-17

申请号：US12880615

申请日：2010-09-13

申请人： Tatsuya FUJINAMI ,  Shinsuke TAKAHASHI ,  Jun FUJINAWA ,  Kouji TONOHARA

发明人： Tatsuya FUJINAMI ,  Shinsuke TAKAHASHI ,  Jun FUJINAWA ,  Kouji TONOHARA

IPC分类号： C23C16/458 ,  C23C16/505

CPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/517 ,  C23C16/54 ,  C23C16/545

摘要： A film deposition method deposits a film on a surface of a substrate in strip form traveling on a peripheral surface of a cylindrical drum in at least one film deposition compartment around the peripheral surface of the drum. The method disposes previously a differential compartment between one film deposition compartment and a compartment including a wrapping space containing at least one of a first position at which the substrate starts to travel on the drum and a second position at which the substrate separates from the drum, the differential compartments communicating with the compartment including the wrapping space and the film deposition compartment, sets a first pressure of the wrapping space lower than a second pressure of the at least one film deposition compartment and performs film deposition in the film deposition compartment with electric power supplied to the drum.

摘要翻译： 薄膜沉积方法将薄膜沉积在基板的表面上，以条带形式在圆筒形滚筒的圆周表面上行进，在至少一个薄膜沉积室周围的圆筒表面上。 该方法事先将一个薄膜沉积隔室和隔室之间的差分隔室置于包含一个包装空间的隔间，该包装空间包含基板开始在滚筒上行进的第一位置和基板与滚筒分离的第二位置中的至少一个， 与包括所述包装空间和所述成膜室的所述隔室连通的所述差动隔间将所述包装空间的第一压力设定为低于所述至少一个成膜室的第二压力，并且利用电力在所述成膜室中进行膜沉积 提供给鼓。

公开(公告)号：US20110064932A1

公开(公告)日：2011-03-17

申请号：US12884468

申请日：2010-09-17

申请人： Toshiya TAKAHASHI ,  Takeshi SENGA ,  Kouji TONOHARA

发明人： Toshiya TAKAHASHI ,  Takeshi SENGA ,  Kouji TONOHARA

IPC分类号： B32B27/06 ,  B32B33/00 ,  C09K3/00

CPC分类号： C23C16/345 ,  C23C16/52

摘要： Gas barrier coatings and gas barrier films are used in displays and so forth. Described gas barrier coatings are excellent not only in gas barrier properties but oxidation resistance, transparency and flexibility. A gas barrier coating is based on silicon nitride, and includes: a N/Si compositional ratio of 1 to 1.4; and a hydrogen content of 10 to 30 atomic percent. A peak of an absorption caused by Si—H stretching vibration occurs at a wavenumber ranging from 2170 to 2200 cm−1 in a Fourier transform infrared absorption spectrum of the coating, with a ratio [I(Si—H)/I(Si—N)] between a peak intensity I(Si—H) of the absorption caused by Si—H stretching vibration and a peak intensity I(Si—H) of an absorption caused by Si—N stretching vibration in the vicinity of 840 cm−1 being 0.03 to 0.15.

摘要翻译： 气体阻隔涂层和阻气膜用于显示器等。 描述的阻气涂层不仅具有阻气性，而且具有抗氧化性，透明性和柔韧性。 气体阻隔涂层是基于氮化硅，并且包括：N / Si组成比为1至1.4; 氢含量为10〜30原子％。 在涂层的傅里叶变换红外吸收光谱中，由Si-H伸缩振动引起的吸收峰出现在2170〜2200cm -1的波数，[I（Si-H）/ I（Si- 由Si-H伸缩振动引起的吸收的峰强度I（Si-H）与在840cm -1附近的Si-N伸缩振动引起的吸收的峰值强度I（Si-H） 1为0.03〜0.15。

公开(公告)号：US20120048197A1

公开(公告)日：2012-03-01

申请号：US13222529

申请日：2011-08-31

申请人： Yoshihiko MOCHIZUKI ,  Kouji TONOHARA

发明人： Yoshihiko MOCHIZUKI ,  Kouji TONOHARA

IPC分类号： C23C16/00

CPC分类号： C23C16/509 ,  C23C16/345 ,  C23C16/545

摘要： A film deposition device includes a conveyor of a strip of substrate in a conveying direction, a film deposition electrode disposed so as to face the substrate, a counter electrode disposed at an opposite side of the film deposition electrode, gas supplier of film deposition gases and a grounded shield disposed in a planar direction of the substrate so as to surround the film deposition electrode. An upstream end portion of the film deposition electrode in the conveying direction is closer to the substrate than an upstream end portion of the grounded shield in the conveying direction corresponding to the upstream end portion of the film deposition electrode.

摘要翻译： 薄膜沉积装置包括沿输送方向的基板条的输送机，与基板相对设置的成膜电极，设置在成膜电极的相对侧的对置电极，成膜气体的气体供给器， 设置在基板的平面方向上以围绕成膜电极的接地屏蔽。 成膜电极沿输送方向的上游端部比接地屏蔽体在与成膜电极的上游侧端部对应的输送方向的上游端部更靠近基板。

公开(公告)号：US20080213602A1

公开(公告)日：2008-09-04

申请号：US12040941

申请日：2008-03-03

申请人： Kensuke MORITA ,  Makoto MURAMATSU ,  Kouji TONOHARA

发明人： Kensuke MORITA ,  Makoto MURAMATSU ,  Kouji TONOHARA

IPC分类号： B32B9/04 ,  B05D3/00 ,  C08L43/00

CPC分类号： C09D143/04 ,  G02B1/111 ,  Y10T428/31663

摘要： An antireflection film forming composition, includes: a polymerized product of Compound (I) having m number of RSi(O0.5)3 units, in which m stands for an integer of from 8 to 16, and Rs each independently represents a non-hydrolyzable group, with the proviso that at least two of Rs each represents a vinyl- or ethynyl-containing group, wherein each of the RSi(O0.5)3 units is linked to another RSi(O0.5)3 unit while having an oxygen atom in common and constitutes a cage structure, and wherein, of solids contained in the composition, the polymerized product obtained by a polymerization reaction of Compound (I) amounts to 60 mass % or greater and Compound (I) amounts to 15 mass % or less.

摘要翻译： 一种防反射膜形成组合物，包括：具有m个RSi（O <0.5>）3个单元的化合物（I）的聚合产物，其中m代表整数 8至16，并且R 5各自独立地表示不可水解基团，条件是Rs中的至少两个表示含乙烯基或乙炔基的基团，其中每个RSi（O <0.5） >）3个单元与另一个RSi（O <0.5> 3）3 单元连接，同时具有共同的氧原子并构成笼结构，并且 其中，通过化合物（I）的聚合反应得到的聚合产物为60质量％以上，化合物（I）为15质量％以下。