公开(公告)号：US08735304B2

公开(公告)日：2014-05-27

申请号：US13429742

申请日：2012-03-26

申请人： Yuichiro Morozumi ,  Takuya Sugawara ,  Koji Akiyama ,  Shingo Hishiya ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yuichiro Morozumi ,  Takuya Sugawara ,  Koji Akiyama ,  Shingo Hishiya ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02189 ,  C23C16/18 ,  C23C16/405 ,  C23C16/45529 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L28/40 ,  H01L29/66181

摘要： A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.

摘要翻译： 形成包括氧化锆膜的电介质膜的方法包括：通过提供锆材料和氧化剂在待处理的基板上形成氧化锆膜，所述锆材料包括包含结构中的环戊二烯基环的Zr化合物， 并且通过供给钛材料和氧化剂在氧化锆膜上形成氧化钛膜，所述钛材料包括结构中包含环戊二烯基环的Ti化合物。

公开(公告)号：US08288241B2

公开(公告)日：2012-10-16

申请号：US13245515

申请日：2011-09-26

申请人： Toshiyuki Hirota ,  Takakazu Kiyomura ,  Yuichiro Morozumi ,  Shingo Hishiya

发明人： Toshiyuki Hirota ,  Takakazu Kiyomura ,  Yuichiro Morozumi ,  Shingo Hishiya

IPC分类号： H01L21/02

CPC分类号： H01L28/40 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228

摘要： To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectric film of a capacitor, the dielectric film has at least one Al-doped layer, and an area density of Al atoms in one layer of the Al-doped layer is smaller than 1.4E+14 atoms/cm2. Further, to achieve the area density, there is employed a combination of formation of a dielectric film using a general ALD method and Al doping using an adsorption site blocking ALD method including adsorbing a blocker molecule restricting an adsorption site of an Al source, adsorbing the Al source, and introducing a reaction gas for reaction.

摘要翻译： 为了提供具有良好结晶性的电介质膜，同时抑制尺寸效应的影响并且防止电介质膜被Al掺杂层划分，尽管提供了用于改善电介质膜中的泄漏特性的Al掺杂层 电介质膜具有至少一个Al掺杂层，并且Al掺杂层的一层中的Al原子的面密度小于1.4E + 14原子/ cm 2。 此外，为了实现面积密度，采用通常的ALD法形成电介质膜和使用吸附位阻挡ALD法的Al掺杂的组合，其包括吸附限制Al源的吸附位点的阻断分子，吸附 Al源，并引入反应气体进行反应。

公开(公告)号：US08357583B2

公开(公告)日：2013-01-22

申请号：US13227667

申请日：2011-09-08

申请人： Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/02

CPC分类号： H01L28/60 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L27/0207 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/75 ,  H01L28/91

摘要： A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode.

摘要翻译： 一种半导体器件的制造方法，至少在半导体基板上形成包含氮化钛的下电极，在下电极上形成包含氧化锆作为主要成分的电介质膜，在电介质上形成包含钛化合物的第一保护膜 并且在第一保护膜上形成包括氮化钛的上电极。 该方法可以包括在下电极上形成电介质膜的步骤之前在下电极上形成第二保护膜的步骤。

公开(公告)号：US08283227B2

公开(公告)日：2012-10-09

申请号：US13282814

申请日：2011-10-27

申请人： Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/8242

CPC分类号： H01L27/10817 ,  H01L27/10852 ,  H01L28/57

摘要： In a method for manufacturing a semiconductor memory device, a three dimensional lower electrode including a titanium nitride film is formed on a semiconductor substrate, and a dielectric film is formed on the surface of the lower electrode. After a first upper electrode is formed at a temperature that the crystal of the dielectric film is not grown on the surface of the dielectric film, the first upper electrode and the dielectric film are heat-treated at a temperature that the crystal of the dielectric film is grown to convert at least a portion of the dielectric film into a crystalline state. Thereafter, a second upper electrode is formed on the surface of the first upper electrode.

摘要翻译： 在制造半导体存储器件的方法中，在半导体衬底上形成包括氮化钛膜的三维下电极，并且在下电极的表面上形成电介质膜。 在电介质膜的晶体不在电介质膜的表面上生长的温度下形成第一上电极之后，在电介质膜的晶体的温度下对第一上电极和电介质膜进行热处理 生长以将至少一部分电介质膜转化为结晶状态。 此后，在第一上电极的表面上形成第二上电极。

公开(公告)号：US20110052810A1

公开(公告)日：2011-03-03

申请号：US12918152

申请日：2009-02-18

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： C23C16/22

CPC分类号： H01L21/02197 ,  C23C16/409 ,  C23C16/45531 ,  H01G4/1227 ,  H01L21/0228 ,  H01L21/31691 ,  H01L28/55

摘要： An AxByOz-type oxide film can be produced by introducing a first organic metal compound source material, a second organic metal compound source material and an oxidizer into a processing chamber and forming the AxByOz-type oxide film on a substrate. In the production, a compound which has a low vapor pressure and has an organic ligand capable of being decomposed with an oxidizer to produce CO is used as the first organic metal compound source material, a metal alkoxide is used as the second organic metal compound source material, and gaseous O3 or O2 is used as the oxidizer. It is absolutely necessary to introduce the second organic metal compound source material immediately before the introduction of the oxidizer.

摘要翻译： 可以通过将第一有机金属化合物源材料，第二有机金属化合物源材料和氧化剂引入到处理室中并在基板上形成AxByOz型氧化物膜来制造AxByOz型氧化物膜。 在制造中，使用具有低蒸气压并具有能够用氧化剂分解以产生CO的有机配体的化合物作为第一有机金属化合物源材料，使用金属醇盐作为第二有机金属化合物源 材料和气态O 3或O 2用作氧化剂。 在引入氧化剂之前，绝对需要引入第二有机金属化合物源材料。

公开(公告)号：US20120235276A1

公开(公告)日：2012-09-20

申请号：US13051531

申请日：2011-03-18

申请人： Xiangxin Rui ,  Hanhong Chen ,  Edward Haywood ,  Sandra Malhotra ,  Takashi Arao ,  Naonori Fujiwara ,  Toshiyuki Hirota ,  Takakazu Kiyomura ,  Kenichi Koyanagi

发明人： Xiangxin Rui ,  Hanhong Chen ,  Edward Haywood ,  Sandra Malhotra ,  Takashi Arao ,  Naonori Fujiwara ,  Toshiyuki Hirota ,  Takakazu Kiyomura ,  Kenichi Koyanagi

IPC分类号： H01L29/02 ,  H01L21/02

CPC分类号： H01L28/60 ,  H01L21/02 ,  H01L27/1085 ,  H01L28/40

摘要： A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO2) on the first TiN electrode; depositing a dielectric material on the first layer of titanium dioxide; and depositing a second TiN electrode on the dielectric material.

摘要翻译： 公开了一种用于制造动态随机存取存储器电容器的方法。 该方法可以包括沉积第一氮化钛（TiN）电极; 在第一TiN电极上形成第一层二氧化钛（TiO 2）; 在第一层二氧化钛上沉积电介质材料; 以及在所述电介质材料上沉积第二TiN电极。

公开(公告)号：US20110036288A1

公开(公告)日：2011-02-17

申请号：US12918165

申请日：2009-02-18

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： C30B1/02

CPC分类号： H01L21/02197 ,  C23C16/40 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02323 ,  H01L21/02356 ,  H01L21/31691 ,  H01L28/40

摘要： Disclosed is a method for Sr—Ti—O-base film formation. The method comprises placing a substrate with a Ru film formed thereon in a treatment vessel, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a first Sr—Ti—O-base film having a thickness of not more than 10 nm on the Ru film, annealing the first Sr—Ti—O-base film for crystallization, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a second Sr—Ti—O-base film on the first Sr—Ti—O-base film, and annealing the second Sr—Ti—O-base film for crystallization.

摘要翻译： 公开了一种Sr-Ti-O基成膜方法。 该方法包括将其上形成有Ru膜的基板放置在处理容器中，将气态Ti材料，气态Sr材料和气态氧化剂引入处理容器中以形成第一Sr-Ti-O基膜，其具有 在Ru膜上的厚度不大于10nm，对第一Sr-Ti-O基膜进行结晶退火，将气态Ti材料，气态Sr材料和气态氧化剂引入处理容器中以形成 在第一Sr-Ti-O基膜上形成第二Sr-Ti-O基膜，并对第二Sr-Ti-O基膜进行退火以进行结晶化。

公开(公告)号：US08679913B2

公开(公告)日：2014-03-25

申请号：US12676237

申请日：2008-09-02

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/8242 ,  H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/316

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/67115 ,  H01L21/68742 ,  H01L28/55

摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.

摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。

公开(公告)号：US20120115300A1

公开(公告)日：2012-05-10

申请号：US13282814

申请日：2011-10-27

申请人： Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/02

CPC分类号： H01L27/10817 ,  H01L27/10852 ,  H01L28/57

摘要： In a method for manufacturing a semiconductor memory device, a three dimensional lower electrode including a titanium nitride film is formed on a semiconductor substrate, and a dielectric film is formed on the surface of the lower electrode. After a first upper electrode is formed at a temperature that the crystal of the dielectric film is not grown on the surface of the dielectric film, the first upper electrode and the dielectric film are heat-treated at a temperature that the crystal of the dielectric film is grown to convert at least a portion of the dielectric film into a crystalline state. Thereafter, a second upper electrode is formed on the surface of the first upper electrode.

摘要翻译： 在制造半导体存储器件的方法中，在半导体衬底上形成包括氮化钛膜的三维下电极，并且在下电极的表面上形成电介质膜。 在电介质膜的晶体不在电介质膜的表面上生长的温度下形成第一上电极之后，在电介质膜的晶体的温度下对第一上电极和电介质膜进行热处理 生长以将至少一部分电介质膜转化为结晶状态。 此后，在第一上电极的表面上形成第二上电极。

公开(公告)号：US20110014797A1

公开(公告)日：2011-01-20

申请号：US12676237

申请日：2008-09-02

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/30

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/67115 ,  H01L21/68742 ,  H01L28/55

摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.

摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。