公开(公告)号：US5897983A

公开(公告)日：1999-04-27

申请号：US655568

申请日：1996-05-30

申请人： Toshiyuki Hirota ,  Tomomi Kurokawa ,  Masanobu Zenke ,  Kazuki Yokota

发明人： Toshiyuki Hirota ,  Tomomi Kurokawa ,  Masanobu Zenke ,  Kazuki Yokota

IPC分类号： G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  G03C5/00

CPC分类号： H01L28/92 ,  H01L27/10852

摘要： In a method for forming an annular-shaped and vertically extending bottom electrode of a memory cell capacitor, a conductive film is formed on an inter-layer insulator. A photo-resist material is applied on the conductive film to form a photo-resist film thereon. The photo-resist film is patterned by a photo-lithography using a mask which includes a transparent plate-like body and a phase shifting film selectively provided on a predetermined region of the transparent plate-like body to form an annular-shaped and vertically extending photo-resist pattern over the conductive film. The conductive film is subjected to an anisotropic etching, in which the annular-shaped and vertically extending photo-resist pattern is used as a mask, to form an annular-shaped and vertically extending bottom electrode under the annular-shaped and vertically extending photo-resist pattern. The annular-shaped and vertically extending photo-resist pattern is removed.

摘要翻译： 在形成存储单元电容器的环状且垂直延伸的底部电极的方法中，在层间绝缘体上形成导电膜。 在导电膜上涂布光致抗蚀剂材料以在其上形成光致抗蚀剂膜。 通过使用包括透明板状体的掩模和选择性地设置在透明板状体的规定区域上的相移膜的光刻法对光致抗蚀剂膜进行图案化，以形成环状且垂直延伸 导电膜上的光刻胶图案。 对导电膜进行各向异性蚀刻，其中使用环形和垂直延伸的光致抗蚀剂图案作为掩模，以在环形和垂直延伸的光致抗蚀剂图案下形成环形且垂直延伸的底部电极， 抗蚀图案 去除环形和垂直延伸的光刻胶图案。

公开(公告)号：US6146966A

公开(公告)日：2000-11-14

申请号：US859210

申请日：1997-05-20

申请人： Toshiyuki Hirota ,  Hirohito Watanabe ,  Fumiki Aiso ,  Shuji Fujiwara ,  Masanobu Zenke

发明人： Toshiyuki Hirota ,  Hirohito Watanabe ,  Fumiki Aiso ,  Shuji Fujiwara ,  Masanobu Zenke

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L28/84 ,  H01L27/10852

摘要： In a process of forming hemi-spherical silicon grains on an amorphous silicon film in accordance with the "crystal nucleation" process, in order to form crystal nuclei on a top surface and a side surface of the amorphous silicon film, SiH.sub.4 is irradiated onto the top and side surfaces of the amorphous silicon film at a stabilized temperature which is lower than, by at least 5.degree. C., an annealing temperature for growing the hemi-spherical silicon grains from the crystal nuclei, with the result that it is possible to suppress or retard the growth of the crystals growing into the amorphous silicon film from a boundary between the amorphous silicon film and an interlayer insulator film. Thereafter, the amorphous silicon film having the crystal nuclei thus formed on the surface thereof is annealed at the annealing temperature so that the hemi-spherical silicon grains are formed on the whole surface of the top and side surfaces of the amorphous silicon film.

摘要翻译： 在根据“晶体成核”法在非晶硅膜上形成半球形硅晶粒的过程中，为了在非晶硅膜的顶表面和侧表面上形成晶核，将SiH 4照射到 该非晶硅膜的顶表面和侧表面在稳定的温度下低于至少5℃的用于从晶核生长半球形硅晶粒的退火温度，结果是可以 从非晶硅膜和层间绝缘膜之间的边界抑制或延缓从非晶硅膜生长的晶体的生长。 此后，在其表面上形成具有晶核的非晶硅膜在退火温度下退火，使得半球形硅晶粒形成在非晶硅膜的顶表面和侧表面的整个表面上。

公开(公告)号：US5372962A

公开(公告)日：1994-12-13

申请号：US11855

申请日：1993-02-01

申请人： Toshiyuki Hirota ,  Ichirou Honma ,  Hirohito Watanabe ,  Masanobu Zenke

发明人： Toshiyuki Hirota ,  Ichirou Honma ,  Hirohito Watanabe ,  Masanobu Zenke

IPC分类号： H01L21/8242 ,  H01L27/108 ,  H01L21/70

CPC分类号： H01L27/10852 ,  H01L27/10808 ,  Y10S148/138 ,  Y10S438/964

摘要： A capacitor incorporated in a semiconductor integrated circuit device is expected to have a large amount of capacitance without increase of the occupation area, and has a lower electrode increased in surface area by using a roughening technique selected from the group consisting of an anodizing technique, an anodic oxidation, a wet etching and a dry etching so that a surface of the lower electrode becomes porous, thereby increasing the capacitance.

摘要翻译： 期望并入半导体集成电路器件中的电容器具有大量的电容而不增加占用面积，并且通过使用选自以下的粗糙化技术，具有增加表面积的下电极，所述粗糙化技术包括阳极氧化技术， 阳极氧化，湿蚀刻和干蚀刻，使得下电极的表面变多孔，从而增加电容。

公开(公告)号：US5959326A

公开(公告)日：1999-09-28

申请号：US852530

申请日：1997-05-07

申请人： Fumiki Aiso ,  Hirohito Watanabe ,  Toshiyuki Hirota ,  Masanobu Zenke ,  Shuji Fujiwara

发明人： Fumiki Aiso ,  Hirohito Watanabe ,  Toshiyuki Hirota ,  Masanobu Zenke ,  Shuji Fujiwara

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/205 ,  H01L21/283 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01G4/06

CPC分类号： H01L28/84

摘要： In a capacitor incorporated in a semiconductor device, a capacitor lower plate is formed of a first amorphous silicon film on an interlayer insulator film and a second amorphous silicon film stacked on the first amorphous silicon film. A crystallization preventing film is formed between the first and second amorphous silicon films, or alternatively, the first amorphous silicon film is formed to have an impurity concentration lower than that of the second amorphous silicon film. A stacked structure formed of the first and second amorphous silicon films is patterned into a capacitor lower plate having a top surface and a side surface, and hemispherical grains are formed on not only the top surface but also the side surface of the patterned stacked structure. In this process, crystalline growth from the interlayer insulator film is prevented by the crystallization preventing film or by the fact that the first amorphous silicon film is formed to have an impurity concentration lower than that of the second amorphous silicon film. Thus, concaves and convexes in the form of hemispherical grains are uniformly formed on not only the top surface but also the side surface of the patterned stacked structure, so that a remarkably increased capacitance can be obtained.

摘要翻译： 在并入半导体装置的电容器中，电容器下板由层叠绝缘膜上的第一非晶硅膜和层叠在第一非晶硅膜上的第二非晶硅膜形成。 在第一和第二非晶硅膜之间形成结晶防止膜，或者，形成第一非晶硅膜的杂质浓度低于第二非晶硅膜的杂质浓度。 由第一和第二非晶硅膜形成的堆叠结构被图案化成具有顶表面和侧表面的电容器底板，并且半球形晶粒不仅形成在图案化堆叠结构的顶表面而且形成在侧表面上。 在该方法中，通过防止结晶化膜或者形成第一非晶硅膜的杂质浓度低于第二非晶硅膜的杂质浓度来防止来自层间绝缘膜的晶体生长。 因此，半球状晶粒形式的凹凸不仅在图案化叠层结构的顶表面，而且均匀地形成，从而可以获得显着增加的电容。

公开(公告)号：USRE45361E1

公开(公告)日：2015-02-03

申请号：US14068785

申请日：2013-10-31

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： H01L21/302

CPC分类号： H01L21/3081 ,  H01L21/3083 ,  H01L21/76224

摘要： The object of the present invention is to embed an insulating film in a hole having a high aspect ratio and a small width without the occurrence of a void. The thickness of a polishing stopper layer is reduced by making separate layers respectively serve as a mask during forming the hole in a semiconductor substrate, and a stopper during removing the insulating film filled in the hole.

摘要翻译： 本发明的目的是将绝缘膜嵌入具有高纵横比和小宽度的孔中而不发生空隙。 通过在形成半导体衬底中的孔期间分别用作掩模的分隔层和在填充在孔中的绝缘膜去除期间的止动件来减少抛光阻挡层的厚度。

公开(公告)号：US07888726B2

公开(公告)日：2011-02-15

申请号：US12195884

申请日：2008-08-21

申请人： Toshiyuki Hirota ,  Masami Tanioku

发明人： Toshiyuki Hirota ,  Masami Tanioku

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01G4/10 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45546 ,  H01G4/1218 ,  H01G4/20 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L27/1085 ,  H01L28/65 ,  Y10T29/417

摘要： A capacitor for a semiconductor device having a dielectric film between an upper electrode and a lower electrode is featured in that the dielectric film includes an alternately laminated film of hafnium oxide and titanium oxide at an atomic layer level.

摘要翻译： 在上电极和下电极之间具有电介质膜的半导体器件的电容器的特征在于，电介质膜包括原子层级的氧化铪和氧化钛的交替层叠膜。

公开(公告)号：US20090161303A1

公开(公告)日：2009-06-25

申请号：US12256260

申请日：2008-10-22

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： G06F1/16

CPC分类号： G06F1/1632

摘要： According to one embodiment, a docking station for docking therewith a portable computer through connectors includes a docker side control apparatus for energizing an electromagnet to bring a securing mechanism of a PC into a state where the lock of the securing mechanism can be released, and an authentication control apparatus for authenticating a user through a fingerprint sensor or the like. When the user is authenticated as a regular user through the authentication control apparatus, the docker side control apparatus energizes the electromagnet to bring the securing by the securing mechanism into a state where the securing can be released.

摘要翻译： 根据一个实施例，用于通过连接器对接便携式计算机的对接站包括用于激励电磁体以使PC的固定机构进入可以释放固定机构的锁定的状态的码头侧控制装置，以及 用于通过指纹传感器等认证用户的认证控制装置。 当用户通过认证控制装置认证为普通用户时，码头侧控制装置使电磁铁通电，使得固定机构的固定能够释放固定的状态。

公开(公告)号：US20080316120A1

公开(公告)日：2008-12-25

申请号：US12140876

申请日：2008-06-17

申请人： Toshiyuki Hirota ,  Hironori Motoe ,  Noriyasu Kawamura ,  Tomomi Murayama ,  Kentaro Tomioka

发明人： Toshiyuki Hirota ,  Hironori Motoe ,  Noriyasu Kawamura ,  Tomomi Murayama ,  Kentaro Tomioka

IPC分类号： H01Q1/24

CPC分类号： H01Q1/48 ,  H01Q1/2258 ,  H01Q1/38 ,  H01Q9/42 ,  H01Q21/28

摘要： According to one embodiment, an electronic apparatus includes a housing, an inner conductor member provided inside the housing, a conductor part with which the housing is provided, and which restrains undesired electromagnetic radiation from leaking from inside the housing to the outside, and an antenna including an antenna element that is provided on an outer surface of the housing, the antenna using the conductor part as an antenna ground. The housing includes a non-conductor part that is out of the conductor part at least at a part of a region in which the antenna element is provided. When the antenna is viewed from a direction in which the antenna element and the housing overlap each other, a size of a part of the antenna element overlapping the non-conductor part is larger than a part of the antenna element overlapping the conductor part.

摘要翻译： 根据一个实施例，电子设备包括壳体，设置在壳体内部的内部导体构件，设置有壳体的导体部分，并且其抑制不期望的电磁辐射从壳体内部泄漏到外部，并且天线 包括设置在壳体的外表面上的天线元件，使用导体部分作为天线接地的天线。 壳体包括至少在设置有天线元件的区域的一部分处的导体部分外的非导体部分。 当从天线元件和壳体彼此重叠的方向观察天线时，与非导体部分重叠的天线元件的一部分的尺寸大于天线元件与导体部分重叠的部分的尺寸。

公开(公告)号：US20070273595A1

公开(公告)日：2007-11-29

申请号：US11802149

申请日：2007-05-21

申请人： Hiroshi Shimasaki ,  Masao Teshima ,  Satoshi Mizoguchi ,  Anwar Sathath ,  Toshiyuki Hirota

发明人： Hiroshi Shimasaki ,  Masao Teshima ,  Satoshi Mizoguchi ,  Anwar Sathath ,  Toshiyuki Hirota

IPC分类号： H01Q1/24

CPC分类号： H01Q1/2266 ,  G06F1/1616 ,  G06F1/1698 ,  H01Q21/28

摘要： Information equipment according to an embodiment includes a display housing with a display unit, a first radio communication antenna disposed at an end part of the display housing, a second radio communication antenna using a frequency band adjacent to or overlapped with that of the first radio communication antenna, and a third radio communication antenna disposed at an end part between the first and the second radio communication antennas, and uses a frequency band not adjacent to nor overlapped with those of the first and the second radio communication antennas.

摘要翻译： 根据实施例的信息设备包括具有显示单元的显示器壳体，设置在显示器壳体的端部的第一无线电通信天线，使用与第一无线电通信的相邻或重叠的频带的第二无线电通信天线 天线，以及设置在第一和第二无线电通信天线之间的端部的第三无线电通信天线，并且使用与第一和第二无线电通信天线不相邻或与其重叠的频带。

公开(公告)号：US20060139220A1

公开(公告)日：2006-06-29

申请号：US11315338

申请日：2005-12-23

申请人： Toshiyuki Hirota ,  Koichi Kaji

发明人： Toshiyuki Hirota ,  Koichi Kaji

IPC分类号： H01Q1/24

CPC分类号： H04B7/0802 ,  G06F1/1616 ,  G06F1/1698 ,  H01Q1/2266 ,  H01Q1/2291 ,  H01Q21/29 ,  H04B7/0602

摘要： An electronic apparatus comprises antennas, a first radio communication unit which performs radio communication by a first communication system having an antenna switching function in response to a reception state of electronic waves when the first communication unit is connected to any one of the antennas, a second communication unit which performs radio communication by a second communication system different from the first system when the second communication unit is connected to any one of the antennas, a setting unit which sets priorities of connection to the antennas in the first and the second communication unit, and a connection unit which connects any one of the antennas to a radio communication unit high in priority and connects the antennas not connected to the communication unit high in priority to a radio communication unit low in priority on the basis of the priorities which is set by the setting unit.

摘要翻译： 电子设备包括天线，第一无线电通信单元，当第一通信单元连接到天线中的任何一个时，响应于电子波的接收状态，具有天线切换功能的第一通信系统执行无线电通信，第二无线通信单元 通信单元，当所述第二通信单元连接到所述天线中的任一个时，由与所述第一系统不同的第二通信系统执行无线电通信;设置单元，其设置与所述第一和第二通信单元中的天线的连接的优先级， 以及连接单元，其将天线中的任一个连接到优先级高的无线电通信单元，基于优先级低优先级将低优先级的无线电通信单元优先地连接到优先级高的无线电通信单元，将未连接到通信单元的天线连接到优先级高的优先级， 设置单位。