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公开(公告)号：US08461059B2
公开(公告)日：2013-06-11
申请号：US12838911
申请日：2010-07-19
IPC分类号： H01L21/473
CPC分类号： C23C16/402 , C23C16/45525 , C23C16/45557 , H01L21/02164 , H01L21/0228 , H01L21/3141 , H01L21/31608
摘要： A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.
摘要翻译： 分批CVD法重复包括吸附和反应步骤的循环以及除去残余气体的步骤。 通过首先将源气体阀开启第一时间段，然后将源气体阀关闭而将源气体供应到处理容器中，同时将原料气体供给到处理容器中，同时通过保持反应气体阀 关闭，并且不通过保持排气阀关闭从处理容器内部排出气体。 通过将源气体阀保持关闭，同时通过将反应性气体阀打开而将反应性气体供给到处理容器中，并且通过将处理容器内的气体排出到处理容器内部来排出气体，从而进行反应步骤， 排气阀从预定的打开状态逐渐减小阀开度。
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公开(公告)号：US20110021033A1
公开(公告)日：2011-01-27
申请号：US12838911
申请日：2010-07-19
IPC分类号： H01L21/46
CPC分类号： C23C16/402 , C23C16/45525 , C23C16/45557 , H01L21/02164 , H01L21/0228 , H01L21/3141 , H01L21/31608
摘要： A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.
摘要翻译： 分批CVD法重复包括吸附和反应步骤的循环以及除去残余气体的步骤。 通过首先将源气体阀开启第一时间段，然后将源气体阀关闭而将源气体供应到处理容器中，同时将原料气体供给到处理容器中，同时通过保持反应气体阀 关闭，并且不通过保持排气阀关闭从处理容器内部排出气体。 通过将源气体阀保持关闭，同时通过将反应性气体阀打开而将反应性气体供给到处理容器中，并且通过将处理容器内的气体排出到处理容器内部来排出气体，进行反应步骤， 排气阀从预定的打开状态逐渐减小阀开度。
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公开(公告)号：US07926445B2
公开(公告)日：2011-04-19
申请号：US11898366
申请日：2007-09-11
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
IPC分类号： C23C16/00 , C23C16/455
CPC分类号： C23C8/12 , C23C8/16 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.
摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。
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公开(公告)号：US20050272269A1
公开(公告)日：2005-12-08
申请号：US11086671
申请日：2005-03-23
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
IPC分类号： H01L21/31 , C23C8/12 , C23C8/16 , C23C16/00 , H01L21/316 , H01L21/469
CPC分类号： C23C8/12 , C23C8/16 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.
摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。
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公开(公告)号：US20080056967A1
公开(公告)日：2008-03-06
申请号：US11898366
申请日：2007-09-11
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
CPC分类号： C23C8/12 , C23C8/16 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.
摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。
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公开(公告)号：US07125811B2
公开(公告)日：2006-10-24
申请号：US10924853
申请日：2004-08-25
IPC分类号： H01L21/31
CPC分类号： C23C8/16 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.
摘要翻译： 用于对目标基板的表面进行氧化的半导体工艺的氧化方法包括加热容纳目标基板的处理容器，并且在排出处理容器的同时将氢气和氧气供给到处理容器中。 氧化方法还包括使氢气和氧气在处理容器中在处理温度和工艺压力下彼此反应以产生水蒸汽，并通过水蒸汽氧化目标基底的表面。 工艺压力设定为2000Pa（15Torr）以上。
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公开(公告)号：US20060183343A1
公开(公告)日：2006-08-17
申请号：US11059630
申请日：2005-02-17
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
IPC分类号： H01L21/31
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67757
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.
摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。
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公开(公告)号：US07674724B2
公开(公告)日：2010-03-09
申请号：US12213784
申请日：2008-06-24
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
IPC分类号： H01L21/469
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67757
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.
摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。
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公开(公告)号：US07625604B2
公开(公告)日：2009-12-01
申请号：US10523803
申请日：2003-08-08
申请人： Keisuke Suzuki , Wenling Wang , Tsukasa Yonekawa , Toshiyuki Ikeuchi , Toru Sato
发明人： Keisuke Suzuki , Wenling Wang , Tsukasa Yonekawa , Toshiyuki Ikeuchi , Toru Sato
IPC分类号： C23C16/00
CPC分类号： H01L21/67253 , C23C16/46 , C23C16/52 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/31662 , H01L21/67109 , H01L21/67248 , H01L22/20 , Y10T436/25
摘要： The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step. Then, a third thermal processing step carries out thermal processing steps by using production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected during the previous step.
摘要翻译： 热处理方法技术领域本发明涉及一种热处理方法，其包括使用多个第一基板进行热处理步骤的第一热处理步骤，其中通过较少的处理气体的消耗在多个第一基板的表面上形成薄膜 比生产基板的表面。 然后，第二热处理步骤通过使用多个第二基板进行热处理步骤，其中通过更多的处理气体的消耗而在多个第二基板的表面上形成薄膜，而不是在多个第二基板的表面上形成薄膜 第一基板，并且其中加热单元分别被调整到在前一步骤期间设置的相应温度设定值。 然后，第三热处理步骤通过使用生产基板作为多个基板来进行热处理步骤，其中多个加热单元分别被调整到在前一步骤期间校正的各个温度设定值。
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公开(公告)号：US07304003B2
公开(公告)日：2007-12-04
申请号：US11086671
申请日：2005-03-23
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
IPC分类号： H01L21/31
CPC分类号： C23C8/12 , C23C8/16 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.
摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。
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