公开(公告)号：US20050272258A1

公开(公告)日：2005-12-08

申请号：US11143449

申请日：2005-06-03

申请人： Toshiyuki Morita ,  Hiroshi Toyoda ,  Yoshitaka Matsui ,  Fumitoshi Ikegaya ,  Atsuko Sakata ,  Tomio Katata ,  Seiichi Omoto

发明人： Toshiyuki Morita ,  Hiroshi Toyoda ,  Yoshitaka Matsui ,  Fumitoshi Ikegaya ,  Atsuko Sakata ,  Tomio Katata ,  Seiichi Omoto

IPC分类号： H01L21/285 ,  H01L21/288 ,  H01L21/768 ,  H01L31/00

CPC分类号： H01L21/2885 ,  H01L21/2855 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76835 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one aspect of the present invention, provided is a method of manufacturing a semiconductor device, including: forming a first metal film on a substrate having a recessed portion in a surface thereof, by a plating method so as to bury the first metal film in at least part of the recessed portion; forming a second metal film on the first metal film by a film deposition method different from the plating method, the second metal film including, as a main component, a metal that is a main component of the first metal film and containing an impurity whose concentration is lower than concentration of an impurity contained in the first metal film; heat-treating the first and second metal films; and removing the first and second metal films except portions buried in the recessed portion.

摘要翻译： 根据本发明的一个方面，提供一种制造半导体器件的方法，包括：通过电镀方法在其表面具有凹陷部分的基板上形成第一金属膜，以便将第一金属膜 在所述凹部的至少一部分中; 通过不同于镀覆方法的成膜方法在第一金属膜上形成第二金属膜，第二金属膜以第一金属膜的主要成分为主成分，含有浓度为 低于第一金属膜中所含杂质的浓度; 热处理第一和第二金属膜; 以及去除除了隐藏在凹部中的部分之外的第一和第二金属膜。

公开(公告)号：US20060113674A1

公开(公告)日：2006-06-01

申请号：US11329081

申请日：2006-01-11

申请人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

发明人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

IPC分类号： H01L23/48

CPC分类号： H01L21/76846 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886 ,  H01L21/76888 ,  H01L22/32 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05605 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48799 ,  H01L2224/48805 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48816 ,  H01L2224/4882 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/05609 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48713 ,  H01L2224/48705 ,  H01L2224/4872 ,  H01L2224/48605 ,  H01L2224/48613 ,  H01L2224/4862 ,  H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

公开(公告)号：US20130093090A1

公开(公告)日：2013-04-18

申请号：US13707359

申请日：2012-12-06

申请人： Yumi HAYASHI ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

发明人： Yumi HAYASHI ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

IPC分类号： H01L23/485

CPC分类号： H01L23/485 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.

摘要翻译： 一种制造半导体器件的方法，包括在衬底上形成电介质膜; 在电介质膜中形成开口; 形成含有其形成硅化物的能量低于开口内的硅化铜的能量的金属的第一膜; 在形成有含有金属的第一膜的开口中形成导电性并且含有铜（Cu）的第二膜; 以及在所述基板的温度低于300℃的气氛中，在所述第二膜上选择性地形成含有Cu和硅（Si）的复合膜。

公开(公告)号：US20100181673A1

公开(公告)日：2010-07-22

申请号：US12652204

申请日：2010-01-05

申请人： Yumi HAYASHI ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

发明人： Yumi HAYASHI ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/485 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.

摘要翻译： 一种制造半导体器件的方法，包括在衬底上形成电介质膜; 在电介质膜中形成开口; 形成含有其形成硅化物的能量低于开口内的硅化铜的能量的金属的第一膜; 在形成有含有金属的第一膜的开口中形成导电性并且含有铜（Cu）的第二膜; 以及在所述基板的温度低于300℃的气氛中，在所述第二膜上选择性地形成含有Cu和硅（Si）的复合膜。

公开(公告)号：US07675183B2

公开(公告)日：2010-03-09

申请号：US12081818

申请日：2008-04-22

申请人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

发明人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76846 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886 ,  H01L21/76888 ,  H01L22/32 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05605 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48799 ,  H01L2224/48805 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48816 ,  H01L2224/4882 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/05609 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48713 ,  H01L2224/48705 ,  H01L2224/4872 ,  H01L2224/48605 ,  H01L2224/48613 ,  H01L2224/4862 ,  H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。

公开(公告)号：US08536706B2

公开(公告)日：2013-09-17

申请号：US13707359

申请日：2012-12-06

申请人： Yumi Hayashi ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

发明人： Yumi Hayashi ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/485 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.

公开(公告)号：US08344509B2

公开(公告)日：2013-01-01

申请号：US12652204

申请日：2010-01-05

申请人： Yumi Hayashi ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

发明人： Yumi Hayashi ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

IPC分类号： H01L23/48

CPC分类号： H01L23/485 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.

摘要翻译： 一种制造半导体器件的方法，包括在衬底上形成电介质膜; 在电介质膜中形成开口; 形成含有其形成硅化物的能量低于开口内的硅化铜的能量的金属的第一膜; 在形成有含有金属的第一膜的开口中形成导电性并且含有铜（Cu）的第二膜; 以及在所述基板的温度低于300℃的气氛中，在所述第二膜上选择性地形成含有Cu和硅（Si）的复合膜。

公开(公告)号：US08110497B2

公开(公告)日：2012-02-07

申请号：US12646598

申请日：2009-12-23

申请人： Atsuko Sakata ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

IPC分类号： H01L21/4763

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76835 ,  H01L21/76864 ,  H01L21/76877

摘要： An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.

摘要翻译： 本发明的实施例提供一种用于制造半导体器件的方法。 该方法包括：至少在基板的凹部的内表面上形成种子膜; 在种子膜上形成保护膜，保护膜由比形成种子膜的材料更容易氧化的材料制成; 热处理保护膜; 通过除去至少部分经热处理的保护膜来暴露至少部分种子膜; 通过电解电镀在所述种子膜上形成电镀膜，以通过向至少部分暴露的种子膜供电; 除去除了隐藏在凹部中的部分之外的电镀膜。

公开(公告)号：US20100167529A1

公开(公告)日：2010-07-01

申请号：US12646598

申请日：2009-12-23

申请人： Atsuko SAKATA ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

发明人： Atsuko SAKATA ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

IPC分类号： H01L21/768

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76835 ,  H01L21/76864 ,  H01L21/76877

摘要： An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.

摘要翻译： 本发明的实施例提供一种用于制造半导体器件的方法。 该方法包括：至少在基板的凹部的内表面上形成种子膜; 在种子膜上形成保护膜，保护膜由比形成种子膜的材料更容易氧化的材料制成; 热处理保护膜; 通过除去至少部分经热处理的保护膜来暴露至少部分种子膜; 通过电解电镀在所述种子膜上形成电镀膜，以通过向至少部分暴露的种子膜供电; 除去除了隐藏在凹部中的部分之外的电镀膜。

公开(公告)号：US20080237863A1

公开(公告)日：2008-10-02

申请号：US12081818

申请日：2008-04-22

申请人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

发明人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

IPC分类号： H01L23/49

CPC分类号： H01L21/76846 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886 ,  H01L21/76888 ,  H01L22/32 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05605 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48799 ,  H01L2224/48805 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48816 ,  H01L2224/4882 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/05609 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48713 ,  H01L2224/48705 ,  H01L2224/4872 ,  H01L2224/48605 ,  H01L2224/48613 ,  H01L2224/4862 ,  H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。