摘要:
The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.
摘要:
The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.
摘要:
The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.
摘要:
The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.
摘要:
The present invention discloses a semiconductor PN junction structure and a manufacturing method thereof. From top view, the PN junction includes a staggered comb-teeth structure. The PN junction forms a depletion region with enhanced breakdown voltage, hence broadening the applications of a semiconductor device having such PN junction.
摘要:
An LED (light emitting diode) chip includes a substrate, a first conduction layer formed on a top surface of the substrate, and a second conduction layer formed on the first conduction layer. The first conduction layer extends from a bottom surface of the second conduction layer to a circumferential surface of the second conduction layer, thereby surrounding the bottom surface and the circumferential surface of the second conduction layer. An active layer is sandwiched between the first and second conduction layers, to increase a contact area between the active layer and the first conduction layer and the second conduction layer.
摘要:
An exemplary lighting cup includes a cup body, a lighting module, and a power module. The cup body is for containing drink therein. The lighting module is mounted on the cup body and includes lighting elements. The power module supports the cup body and electrically connects with the lighting module to drive the lighting elements to emit light.
摘要:
A temperature controlling protection system for a heater of the wet etching device has a temperature controlling protection circuit and a heating ON/OFF controller, in which the temperature controlling circuit has an OR gate, an AND gate and a NOT gate. When the temperature controlling protection circuit receives signals from the wet etching device, such as a level signal for a level sensor, an overheated signal for a temperature sensor, a ON/OFF signal for an acid discharging switch, a protection signal and a caution signal for the heater 28 and output signal for a constant temperature controller, it is determined whether the heater of the wet etching device is actuated to provide heat to the reaction gas in the wet etching device.
摘要:
An LED (light emitting diode) includes a seat and an LED chip. The seat includes a main body, and a first electrode and a second electrode formed on the main body. The LED chip includes a first semiconductor layer, an annular light-emitting layer encircling the first semiconductor layer, and an annular second semiconductor layer encircling the light-emitting layer. The first electrode electrically connects with the first semiconductor layer, and the second electrode electrically connects with the second semiconductor layer.
摘要:
An energy-saving illumination system includes a piezoelectric floor, a revolving door, an accumulator, a light source, and an electrical power sensing device. The piezoelectric floor contains piezoelectric material therein. The revolving door comprises a power generating device. The accumulator is electrically connected to the piezoelectric floor and the power generating device. The light source is electrically connected with the accumulator. The electrical power sensing device is configured to detect the quantity of electric charge in the accumulator; the power generating device of the revolving door charges the accumulator according to the detected result obtained from the electrical power sensing device in respect to the accumulator.