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    Semiconductor device, RF-IC and manufacturing method of the same
    1.
    发明授权
    Semiconductor device, RF-IC and manufacturing method of the same 有权
    半导体器件，RF-IC及其制造方法相同

    公开(公告)号：US08183616B2

    公开(公告)日：2012-05-22

    申请号：US12873668

    申请日：2010-09-01

    申请人： Tsuyoshi Fujiwara ,  Toshinori Imai ,  Takeshi Saikawa ,  Yoshinori Kawasaki ,  Mitsuhiro Toya ,  Shunji Mori ,  Yoshiyuki Okabe

    发明人： Tsuyoshi Fujiwara ,  Toshinori Imai ,  Takeshi Saikawa ,  Yoshinori Kawasaki ,  Mitsuhiro Toya ,  Shunji Mori ,  Yoshiyuki Okabe

    IPC分类号： H01L29/94

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/87

    摘要： Provided is a technology capable of reducing parasitic capacitance of a capacitor while reducing the space occupied by the capacitor. A stacked structure is obtained by forming, over a capacitor composed of a lower electrode, a capacitor insulating film and an intermediate electrode, another capacitor composed of the intermediate electrode, another capacitor insulating film and an upper electrode. Since the intermediate electrode has a step difference, each of the distance between the intermediate electrode and lower electrode and the distance between the intermediate electrode and upper electrode in a region other than the capacitor formation region becomes greater than that in the capacitor formation region. For example, the lower electrode is brought into direct contact with the capacitor insulating film in the capacitor formation region, while the lower electrode is not brought into direct contact with the capacitor insulating film in the region other than the capacitor formation region.

    摘要翻译： 提供了一种能够减小电容器的寄生电容同时减小电容器所占空间的技术。 通过在由下电极构成的电容器，电容绝缘膜和中间电极上形成电容器，由中间电极，另一电容绝缘膜和上电极构成的另一电容器形成堆叠结构。 由于中间电极具有台阶差，所以在电容器形成区域以外的区域中，中间电极和下部电极之间的距离以及中间电极与上部电极之间的距离变得比电容器形成区域的大。 例如，下电极与电容器形成区域中的电容绝缘膜直接接触，而在电容器形成区域以外的区域中，下电极不与电容器绝缘膜直接接触。

    Semiconductor device, RF-IC and manufacturing method of the same
    2.
    发明申请
    Semiconductor device, RF-IC and manufacturing method of the same 审中-公开
    半导体器件，RF-IC及其制造方法相同

    公开(公告)号：US20060289917A1

    公开(公告)日：2006-12-28

    申请号：US11473229

    申请日：2006-06-23

    申请人： Tsuyoshi Fujiwara ,  Toshinori Imai ,  Takeshi Saikawa ,  Yoshihiro Kawasaki ,  Mitsuhiro Toya ,  Shunji Mori ,  Yoshiyuki Okabe

    发明人： Tsuyoshi Fujiwara ,  Toshinori Imai ,  Takeshi Saikawa ,  Yoshihiro Kawasaki ,  Mitsuhiro Toya ,  Shunji Mori ,  Yoshiyuki Okabe

    IPC分类号： H01L29/94

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/87

    摘要： Provided is a technology capable of reducing parasitic capacitance of a capacitor while reducing the space occupied by the capacitor. A stacked structure is obtained by forming, over a capacitor composed of a lower electrode, a capacitor insulating film and an intermediate electrode, another capacitor composed of the intermediate electrode, another capacitor insulating film and an upper electrode. Since the intermediate electrode has a step difference, each of the distance between the intermediate electrode and lower electrode and the distance between the intermediate electrode and upper electrode in a region other than the capacitor formation region becomes greater than that in the capacitor formation region. For example, the lower electrode is brought into direct contact with the capacitor insulating film in the capacitor formation region, while the lower electrode is not brought into direct contact with the capacitor insulating film in the region other than the capacitor formation region.

    摘要翻译： 提供了一种能够减小电容器的寄生电容同时减小电容器所占空间的技术。 通过在由下电极构成的电容器，电容绝缘膜和中间电极上形成电容器，由中间电极，另一电容绝缘膜和上电极构成的另一电容器形成堆叠结构。 由于中间电极具有台阶差，所以在电容器形成区域以外的区域中，中间电极和下部电极之间的距离以及中间电极和上部电极之间的距离变得比电容器形成区域的大。 例如，下电极与电容器形成区域中的电容绝缘膜直接接触，而在电容器形成区域以外的区域中，下电极不与电容器绝缘膜直接接触。