-
公开(公告)号：US20050072683A1
公开(公告)日：2005-04-07
申请号：US10816168
申请日：2004-04-02
摘要： An acid copper plating solution comprises copper ions, an organic acid or an inorganic acid, chloride ions, a high molecular weight surfactant that controls the electrodeposition reaction, and a sulfur-containing saturated organic compound that promotes the electrocoating rate. The high molecular weight surfactant comprises two or more types of surfactants with different hydrophobicities. The plating solution is used for forming a plating film on a conductor layer.
摘要翻译： 酸性铜电镀液包含铜离子，有机酸或无机酸，氯离子，控制电沉积反应的高分子量表面活性剂，以及促进电泳率的含硫饱和有机化合物。 高分子量表面活性剂包含两种或多种具有不同疏水性的表面活性剂。 电镀液用于在导体层上形成镀膜。
-
公开(公告)号：US20050045486A1
公开(公告)日：2005-03-03
申请号：US10885136
申请日：2004-07-07
IPC分类号： C25D3/38 , C25D5/02 , C25D7/12 , H01L21/288 , H01L21/445 , H01L21/768 , H05K3/18 , H05K3/42
CPC分类号： H05K3/423 , C25D3/38 , H01L21/2885 , H01L21/76877
摘要： The present invention provides a plating method which can embed copper in interconnect recesses, such as vias and interconnect trenches, having an opening width or size of several tens of μm and an aspect ratio of at least 1.5. The plating method comprises: providing a substrate having interconnect recesses, whose surfaces are covered with a conductive layer, formed in a surface of the substrate; bringing the surface of the substrate into contact with a plating solution containing copper ions, an organic or inorganic acid, chloride ions, a polymeric surfactant for suppressing electrodeposition, a sulfur-containing saturated organic compound for promoting the growth of a plated film, and a nitrogen-containing polymer for flattening a surface of the plated film; and applying a voltage between the conductive layer and an anode immersed in the plating solution.
摘要翻译： 本发明提供一种电镀方法，其可以将铜嵌入诸如通路和互连沟槽的互连凹槽中，其具有几十个开口宽度或尺寸，并且纵横比至少为1.5。 电镀方法包括：提供具有互连凹槽的基板，其表面被形成在基板的表面中的导电层覆盖; 使基板的表面与含有铜离子，有机或无机酸，氯离子的电镀溶液，用于抑制电沉积的聚合物表面活性剂接触，用于促进镀膜生长的含硫饱和有机化合物，以及 用于使镀膜表面变平的含氮聚合物; 以及在所述导电层和浸在所述电镀液中的阳极之间施加电压。
-
公开(公告)号：US20080264798A1
公开(公告)日：2008-10-30
申请号：US12139051
申请日：2008-06-13
IPC分类号： C25D3/38
摘要： An acid copper plating solution and plating method are disclosed. The acid copper plating solution comprises copper ions, an organic acid or an inorganic acid, chloride ions, high molecular weight surfactant which controls the electrodeposition reaction, and a sulfur-containing saturated organic compound which promotes the electrocoating rate, wherein the high molecular weight surfactant comprises two or more types with different hydrophobicities. The plating method is a method for forming a plating film on a conductor layer, which is formed on at least a part of a structural object having a concave-convex pattern on a semiconductor substrate, and comprises providing a cathode potential to the conductor layer and supplying a plating solution which electrically connects an anode with the conductor layer, wherein the plating solution contains 25-75 g/l of copper ion and 0.4 mol/l of an organic acid or inorganic acid and an electric resistor is installed between the conductor layer and the anode. Also disclosed is a plating method for forming a wiring circuit on an electronic circuit substrate having fine holes and trenches, comprising forming a plating film on a conductor layer, which is formed on at least a part of the substrate, and filling the holes and trenches with copper, wherein the plating film is formed by using an acid copper plating solution containing copper ions, organic or inorganic acid, chloride ions, sulfur-containing saturated organic compound, and high molecular weight surfactant controlling electrocoating concentration of 500 ppm or more.The acid copper plating solution and the plating methods are extremely useful as a technology for plating the surface of wafers, which are semiconductor materials, particularly for forming circuit patterns having submicron-level trenches on electronic circuit substrates such as wafers, semi-conductor substrates, or printed boards by using metal plating such as copper plating and can therefore be used with advantage for manufacturing next generation electronic circuit boards with an increasing density of wiring circuits.
-
4.发明申请Plating method, plating apparatus and a method of forming fine circuit wiring 审中-公开电镀方法，电镀装置以及形成精细电路布线的方法公开(公告)号：US20050126919A1
公开(公告)日：2005-06-16
申请号：US10980320
申请日：2004-11-04
摘要： A copper plating film has a lower chlorine ion content. Circuit wiring of high electromigration resistance is formed by electroplating. In a method of copper plating using a leveler containing a nitrogen-containing high molecular compound, the leveler is dechlorinated prior to its use for plating. A plating apparatus has a tank for preparing a plating solution, a device for dechlorinating a leveler, a leveler supply station for supplying the dechlorinated leveler to the tank and a plating station. A method of forming fine circuit wiring includes forming a circuit with a phosphorus-doped copper plating layer on a substrate for an electronic circuit having a fine circuit pattern, a barrier layer and any necessary seed layer formed thereon.
摘要翻译： 镀铜膜的氯离子含量较低。 具有高电迁移电阻的电路布线通过电镀形成。 在使用含有含氮高分子化合物的矫直机的镀铜方法中，在使用电镀之前，将矫平机脱氯。 电镀装置具有用于制备电镀液的容器，用于脱水的矫直机的装置，用于向该罐供给脱氯矫平机的矫平机供给站和电镀站。 形成精细电路布线的方法包括在具有精细电路图案，阻挡层和形成在其上的任何必要的种子层的电子电路用基板上形成具有磷掺杂铜电镀层的电路。
-
5.发明申请Method and apparatus for determining the concentrations of additives in a plating solution 审中-公开用于测定电镀溶液中添加剂浓度的方法和装置公开(公告)号：US20050208201A1
公开(公告)日：2005-09-22
申请号：US10980321
申请日：2004-11-04
申请人： Makoto Kubota , Tsuyoshi Sahoda , Tsutomu Nakada , Koji Mishima
发明人： Makoto Kubota , Tsuyoshi Sahoda , Tsutomu Nakada , Koji Mishima
摘要： This invention is a method of determining the concentration of any organic additive in a copper sulfate plating solution by using a cyclic voltammetric technique, comprising immersing a measuring probe in a copper sulfate plating solution not containing any organic additive and performing a plurality of times of potential sweeping prior to the analysis of any sample copper sulfate plating solution containing an organic additive. This invention is also a plating solution control system having a tank for preparing a plating solution, a station for determining the concentration of a surface active agent, a station for supplying a surface active agent and a control station, the station for determining the concentration of a surface active agent measuring the concentration of the surface active agent in a plating solution in the tank for preparing a plating solution.
摘要翻译： 本发明是通过使用循环伏安法测定硫酸铜电镀溶液中的任何有机添加剂的浓度的方法，包括将测量探针浸入不含任何有机添加剂的硫酸铜电镀溶液中并执行多次电位 在对含有有机添加剂的任何样品硫酸铜电镀溶液进行分析前进行扫描。 本发明也是一种电镀液控制系统，具有用于制备电镀溶液的槽，用于确定表面活性剂的浓度的站，用于供应表面活性剂的站和控制站的电镀液控制系统， 表面活性剂，其测量用于制备电镀溶液的罐中的电镀溶液中的表面活性剂的浓度。
-
公开(公告)号：US20060144714A1
公开(公告)日：2006-07-06
申请号：US11360685
申请日：2006-02-24
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inous , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inous , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D3/38
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.
-
公开(公告)号：US07033463B1
公开(公告)日：2006-04-25
申请号：US09762582
申请日：1999-08-11
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D17/00
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.
摘要翻译： 一种方法和装置，通过有效地填充形成在半导体衬底中的精细凹槽，镀覆金属而没有空隙或污染，从而形成衬底以形成布线。 用电镀金属填充形成在半导体衬底中的布线凹槽的衬底的电镀包括在衬底上进行形成初始层的无电镀处理，并且进行用电镀金属填充布线凹槽的电解电镀工艺，同时 初始层用作供料层。
-
公开(公告)号：US06638411B1
公开(公告)日：2003-10-28
申请号：US09492138
申请日：2000-01-27
申请人： Koji Mishima , Mizuki Nagai , Ryoichi Kimizuka , Tetsuo Matsuda , Hisashi Kaneko
发明人： Koji Mishima , Mizuki Nagai , Ryoichi Kimizuka , Tetsuo Matsuda , Hisashi Kaneko
IPC分类号： C25D534
CPC分类号： C25D17/001 , C25D5/18 , C25D5/34 , C25D7/123 , H05K3/22 , H05K2203/0392 , H05K2203/122 , Y10S205/917
摘要： The present invention relates to a method and apparatus for separating out metal copper according to an electroplating of copper using, for example, a solution of copper sulfate to produce copper interconnections on a surface of a substrate. The substrate is brought into contact, at least once, with a processing solution containing at least one of organic substance and sulfur compound which are contained in a plating solution. Thereafter, the substrate is brought into contact with the plating solution to plate the substrate.
摘要翻译： 本发明涉及一种使用例如硫酸铜溶液在铜的电镀上分离金属铜的方法和装置，以在基板的表面上产生铜互连。 使基板与包含在电镀液中的含有有机物质和硫化合物的至少一种的处理液接触至少一次。 此后，使基板与电镀液接触以对基板进行平板化。
-
公开(公告)号：US20050051437A1
公开(公告)日：2005-03-10
申请号：US10932126
申请日：2004-09-02
申请人： Keiichi Kurashina , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Tsutomu Nakada
发明人： Keiichi Kurashina , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Tsutomu Nakada
IPC分类号： B05D5/12 , C25D5/00 , C25D7/12 , C25D17/00 , H01L21/288 , H01L21/768
CPC分类号： C25D7/123 , C25D5/003 , C25D17/001 , C25D17/002 , H01L21/2885 , H01L21/76877
摘要： A plating apparatus is used for filling a fine interconnect pattern formed in the substrate with metal to form interconnects. The plating apparatus includes a substrate holder for holding a substrate, a cathode portion including a sealing member for contacting a peripheral portion of a surface, to be plated, of the substrate held by said substrate holder to seal said peripheral portion water-tightly, and a cathode for contacting the substrate to supply current to the substrate, an anode vertically movably disposed so as to face the surface, to be plated, of the substrate, and a porous member disposed between said anode and the surface, to be plated, of the substrate, said porous member being made of a water-retentive material, wherein said porous member has at least a hydrophilic substrate-facing surface which faces the surface, to be plated, of the substrate.
摘要翻译： 电镀装置用于用金属填充形成在衬底中的精细互连图案以形成互连。 电镀装置包括用于保持基板的基板保持件，阴极部分，其包括用于接触由所述基板保持器保持的基板的要被电镀的表面的周边部分的密封构件，以密封所述周边部分的水密性;以及 阴极，用于接触基板以向基板提供电流;阳极，其可垂直移动地设置成面对要被电镀的基板;以及多孔构件，设置在所述阳极和要被电镀的表面之间， 所述多孔构件由保水材料制成，其中所述多孔构件至少具有面向要被电镀的表面的亲水性基底面向表面。
-
公开(公告)号：US20060113192A1
公开(公告)日：2006-06-01
申请号：US10543097
申请日：2004-01-22
CPC分类号： C25D5/06 , C25D7/123 , C25D17/001 , C25D17/14 , H01L21/2885
摘要： According to the present invention, there is provided a plating apparatus which can deposit a metal plated film such as a copper layer selectively in fine recesses for interconnects, such as trenches or via holes in a circuit form. The plating apparatus of the present invention includes an electrode head (701) having an anode (704), a plating solution impregnated material (703) for holding a plating solution, and a porous contact member (702) which is brought into contact with a surface of a substrate; a cathode electrode (712) which is brought into contact with the substrate to supply current to the substrate; a pressing mechanism (709) for pressing the porous contact member of the electrode head against the surface of the substrate under a desired pressure; a power source (723) for applying plating voltage between the anode and the cathode electrode; and a control unit (721) for correlating and controlling the state for pressing the porous contact member of the electrode head against the surface of the substrate, and the state of plating voltage applied between the anode and the cathode electrode.
摘要翻译： 根据本发明，提供了一种电镀装置，其可以选择性地在诸如沟槽或电路形式的通孔之间的互连的细小凹槽中沉积诸如铜层的金属电镀膜。 本发明的电镀装置包括具有阳极（704）的电极头（701），用于保持电镀液的电镀液浸渍材料（703）以及与电镀液接触的多孔接触部件（702） 基材表面; 与基板接触以向基板提供电流的阴极电极（712）; 用于在所需压力下将电极头的多孔接触构件压靠在衬底的表面上的按压机构（709） 用于在阳极和阴极之间施加电镀电压的电源（723）; 以及控制单元（721），用于将电极头的多孔接触构件相对于基板的表面按压和控制的状态以及施加在阳极和阴极之间的电镀电压的状态。
-
-
-
-
-
-
-
-
-
搜索结果
169 条记录 (耗时 0.023 秒)