-
公开(公告)号：USRE42335E1
公开(公告)日：2011-05-10
申请号：US12605206
申请日：2009-10-23
IPC分类号： G05F1/40
CPC分类号： G05F1/575
摘要： A low-dropout regulator with a single-transistor-control providing improved transient response and stability is disclosed. The single-transistor-control provides a dynamic resistance at the output of the regulator for minimizing undershoot and overshoot, and hence improves transient response. Since the single-control transistor reduces the output resistance of the regulator, the output pole is pushed to a sufficiently high frequency without affecting stability. Therefore, the limited choice of combinations of the output capacitance and its equivalent-series-resistance is substantially relaxed.
摘要翻译： 公开了具有提供改进的瞬态响应和稳定性的单晶体管控制的低压差稳压器。 单晶体管控制在稳压器的输出端提供动态电阻，以最大限度地减少下冲和过冲，从而提高瞬态响应。 由于单控晶体管降低了稳压器的输出电阻，所以输出极被推到足够高的频率而不影响稳定性。 因此，输出电容和等效串联电阻的组合的有限选择基本上放宽。
-
公开(公告)号：US07285942B2
公开(公告)日：2007-10-23
申请号：US11369893
申请日：2006-03-07
IPC分类号： G05F1/40
CPC分类号： G05F1/575
摘要： A low-dropout regulator with a single-transistor-control providing improved transient response and stability is disclosed. The single-transistor-control provides a dynamic resistance at the output of the regulator for minimizing undershoot and overshoot, and hence improves transient response. Since the single-control transistor reduces the output resistance of the regulator, the output pole is pushed to a sufficiently high frequency without affecting stability. Therefore, the limited choice of combinations of the output capacitance and its equivalent-series-resistance is substantially relaxed.
摘要翻译： 公开了具有提供改进的瞬态响应和稳定性的单晶体管控制的低压差稳压器。 单晶体管控制在稳压器的输出端提供动态电阻，以最大限度地减少下冲和过冲，从而提高瞬态响应。 由于单控晶体管降低了稳压器的输出电阻，所以输出极被推到足够高的频率而不影响稳定性。 因此，输出电容和等效串联电阻的组合的有限选择基本上放宽。
-
公开(公告)号：US07502271B2
公开(公告)日：2009-03-10
申请号：US11789888
申请日：2007-04-25
申请人： Chi Yat Leung , Wai Chung Chan
发明人： Chi Yat Leung , Wai Chung Chan
IPC分类号： G11C7/02
CPC分类号： G11C16/26 , G11C7/1051 , G11C7/1069 , G11C7/12 , G11C16/24
摘要： The present invention provides a semiconductor device and a control method thereof, the semiconductor device including: a bit line connected to a memory cell; a voltage control circuit controlling a voltage supplied from a voltage source to the bit line; a differential amplifier circuit providing the control voltage to the voltage control circuit in response to a voltage at a node coupled to the bit line and a reference voltage; and a current source providing a current to the differential amplifier circuit. The current source provides more current to the differential amplifier circuit in the first period including a period for precharging than in the second period after precharging.
摘要翻译： 本发明提供一种半导体器件及其控制方法，该半导体器件包括：连接到存储单元的位线; 电压控制电路，控制从电压源向位线提供的电压; 差分放大器电路，其响应于耦合到所述位线的节点处的电压和参考电压而向所述电压控制电路提供所述控制电压; 以及向差分放大器电路提供电流的电流源。 电流源在第一时段中向差分放大器电路提供更多的电流，包括预充电时间比在预充电之后的第二周期内。
-
公开(公告)号：US20070253266A1
公开(公告)日：2007-11-01
申请号：US11789888
申请日：2007-04-25
申请人： Chi Yat Leung , Wai Chan
发明人： Chi Yat Leung , Wai Chan
CPC分类号： G11C16/26 , G11C7/1051 , G11C7/1069 , G11C7/12 , G11C16/24
摘要： The present invention provides a semiconductor device and a control method thereof, the semiconductor device including: a bit line connected to a memory cell; a voltage control circuit controlling a voltage supplied from a voltage source to the bit line; a differential amplifier circuit providing the control voltage to the voltage control circuit in response to a voltage at a node coupled to the bit line and a reference voltage; and a current source providing a current to the differential amplifier circuit. The current source provides more current to the differential amplifier circuit in the first period including a period for precharging than in the second period after precharging.
摘要翻译： 本发明提供一种半导体器件及其控制方法，该半导体器件包括：连接到存储单元的位线; 电压控制电路，控制从电压源向位线提供的电压; 差分放大器电路，其响应于耦合到所述位线的节点处的电压和参考电压而向所述电压控制电路提供所述控制电压; 以及向差分放大器电路提供电流的电流源。 电流源在第一时段中向差分放大器电路提供更多的电流，包括预充电时间比在预充电之后的第二周期内。
-
-
-
搜索结果
4 条记录 (耗时 0.025 秒)