公开(公告)号：US06815356B2

公开(公告)日：2004-11-09

申请号：US10379445

申请日：2003-03-03

申请人： Tzu-Ching Tsai ,  Hsin-Jung Ho ,  Yi-Nan Chen

发明人： Tzu-Ching Tsai ,  Hsin-Jung Ho ,  Yi-Nan Chen

IPC分类号： H01L21311

CPC分类号： H01L21/76232 ,  H01L27/1087 ,  H01L29/66181

摘要： A method for forming a bottle trench in a substrate having a pad structure and a trench. First, a first insulating layer is formed in the trench, and a portion of the first insulating layer is removed to a certain depth of the trench. Next, a second insulating layer is formed in the trench, and portions of the second insulating layer on the pad structure and the sidewalls of the trench are removed. Next, an etching stop layer is formed in the trench, and a bottom portion of the etching stop layer is removed. Finally, the etching stop layer is used as a mask to remove the remaining second insulating layer and the first insulating layer.

摘要翻译： 一种在具有衬垫结构和沟槽的衬底中形成瓶沟槽的方法。 首先，在沟槽中形成第一绝缘层，并且将第一绝缘层的一部分去除到沟槽的一定深度。 接下来，在沟槽中形成第二绝缘层，并且去除衬垫结构上的第二绝缘层的部分和沟槽的侧壁。 接下来，在沟槽中形成蚀刻停止层，去除蚀刻停止层的底部。 最后，将蚀刻停止层用作掩模以去除剩余的第二绝缘层和第一绝缘层。

公开(公告)号：US06800535B1

公开(公告)日：2004-10-05

申请号：US10645681

申请日：2003-08-21

申请人： Tzu-Ching Tsai ,  Yi-Nan Chen ,  Hsin-Jung Ho

发明人： Tzu-Ching Tsai ,  Yi-Nan Chen ,  Hsin-Jung Ho

IPC分类号： H01L2120

CPC分类号： H01L27/1087

摘要： A method for forming bottle-shaped trenches. First, a substrate is provided. Next, a hard mask with openings is formed on the substrate. The substrate is etched through the openings to form trenches with an upper portion and a lower portion. An isolated layer is formed conformally on the hard mask and in the trenches. A shield layer is formed in the lower portion of the trenches. A part of the insulating layer, which is not covered by the shield layer, is then removed. A protective layer is formed on the upper portion of the trenches. The shield layer and the isolated layer are removed. Finally, the substrate of the lower part of the trenches is wet etched using the protective layer as a mask so as to form bottle-shaped trenches.

摘要翻译： 一种用于形成瓶形沟槽的方法。 首先，提供基板。 接下来，在基板上形成具有开口的硬掩模。 通过开口蚀刻衬底以形成具有上部和下部的沟槽。 隔离层在硬掩模和沟槽中共形地形成。 在沟槽的下部形成有屏蔽层。 然后除去未被屏蔽层覆盖的绝缘层的一部分。 在沟槽的上部形成有保护层。 去除屏蔽层和隔离层。 最后，使用保护层作为掩模对沟槽下部的基底进行湿式蚀刻，以形成瓶形沟槽。

公开(公告)号：US07341952B2

公开(公告)日：2008-03-11

申请号：US11348626

申请日：2006-02-07

申请人： Kaan-Lu Tzou ,  Tzu-Ching Tsai ,  Yi-Nan Chen

发明人： Kaan-Lu Tzou ,  Tzu-Ching Tsai ,  Yi-Nan Chen

IPC分类号： H01L21/302

CPC分类号： H01L27/1087 ,  C03C15/00 ,  H01L21/0332 ,  H01L21/3081

摘要： A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask layer disposed thereon. The first hard mask layer is composed of a first boro-silicate glass (BSG) layer and an overlying first undoped silicon glass (USG) layer and the second is composed of a second BSG layer and an overlying second USG layer. A polysilicon layer is formed overlying the multi-layer hard mask structure and then etched to form an opening therein. The multi-layer hard mask structure and the underlying substrate under the opening are successively etched to simultaneously form the deep trench in the substrate and remove the polysilicon layer. The multi-layer hard mask structure is removed.

摘要翻译： 一种用于蚀刻衬底中的深沟槽的方法。 形成覆盖在基板上的多层硬掩模结构，其包括第一硬掩模层和设置在其上的至少一个第二硬掩模层。 第一硬掩模层由第一硼硅酸盐玻璃（BSG）层和上覆的第一未掺杂硅玻璃（USG）层组成，第二硬质掩模层由第二BSG层和第二USG层组成。 形成覆盖多层硬掩模结构的多晶硅层，然后蚀刻以形成其中的开口。 连续蚀刻多层硬掩模结构和开口下方的底层基板，同时在衬底中形成深沟槽并去除多晶硅层。 去除多层硬掩模结构。

公开(公告)号：US20060118886A1

公开(公告)日：2006-06-08

申请号：US11338330

申请日：2006-01-23

申请人： Tzu-Ching Tsai ,  Yi-Nan Chen ,  Hui-Min Mao

发明人： Tzu-Ching Tsai ,  Yi-Nan Chen ,  Hui-Min Mao

IPC分类号： H01L29/772

CPC分类号： H01L21/76897 ,  H01L21/76829 ,  H01L21/76895

摘要： A method of forming a bit line contact via. The method includes providing a substrate having a transistor with a gate electrode, drain region, and source region, forming a conductive layer overlying the drain region, conformally forming an insulating barrier layer overlying the substrate, blanketly forming a dielectric layer overlying the insulating barrier layer, and forming a via through the dielectric layer and insulating barrier layer, exposing the conductive layer.

摘要翻译： 形成位线接触通孔的方法。 该方法包括提供具有晶体管的衬底，该晶体管具有栅极，漏极区和源极区，形成覆盖漏极区的导电层，保形地形成覆盖衬底的绝缘阻挡层，覆盖在绝缘阻挡层上的绝缘层 并且通过介电层和绝缘阻挡层形成通孔，暴露导电层。

公开(公告)号：US20130102123A1

公开(公告)日：2013-04-25

申请号：US13276960

申请日：2011-10-19

申请人： Tzu-Ching Tsai ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Tzu-Ching Tsai ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： H01L21/02

CPC分类号： H01L27/10867

摘要： A method for manufacturing a buried-strap includes: forming a trench capacitor structure in a semiconductor substrate, wherein the trench capacitor structure has a doped polysilicon layer and an isolation collar covered by the doped polysilicon layer, and a top surface of the doped polysilicon layer is lower than a top surface of the semiconductor substrate such that a first recess is formed; sequentially forming a first resist layer, a second resist layer and a third resist layer over the semiconductor substrate; sequentially patterning the third resist layer, the second resist layer and the first resist layer, forming a patterned tri-layer resist layer over the semiconductor substrate; partially removing a portion of the doped polysilicon layer exposed by the patterned tri-layer resist layer to form a second recess; removing the patterned tri-layer resist layer; and forming an insulating layer in the second recess and a portion of the first recess.

摘要翻译： 一种掩埋带的制造方法包括：在半导体衬底中形成沟槽电容器结构，其中沟槽电容器结构具有掺杂多晶硅层和由掺杂多晶硅层覆盖的隔离环，以及掺杂多晶硅层的顶表面 低于半导体衬底的顶表面，从而形成第一凹槽; 在半导体衬底上依次形成第一抗蚀剂层，第二抗蚀剂层和第三抗蚀剂层; 顺序地图案化第三抗蚀剂层，第二抗蚀剂层和第一抗蚀剂层，在半导体衬底上形成图案化的三层抗蚀剂层; 部分地去除由图案化的三层抗蚀剂层暴露的部分掺杂多晶硅层以形成第二凹槽; 去除图案化的三层抗蚀剂层; 以及在所述第二凹部中形成绝缘层和所述第一凹部的一部分。

公开(公告)号：US07195975B2

公开(公告)日：2007-03-27

申请号：US10714001

申请日：2003-11-14

申请人： Tzu-Ching Tsai ,  Yi-Nan Chen ,  Hui-Min Mao

发明人： Tzu-Ching Tsai ,  Yi-Nan Chen ,  Hui-Min Mao

IPC分类号： H01L21/8242 ,  H01L21/20

CPC分类号： H01L21/76897 ,  H01L21/76829 ,  H01L21/76895

摘要： A method of forming a bit line contact via. The method includes providing a substrate having a transistor with a gate electrode, drain region, and source region, forming a conductive layer overlying the drain region, conformally forming an insulating barrier layer overlying the substrate, blanketly forming a dielectric layer overlying the insulating barrier layer, and forming a via through the dielectric layer and insulating barrier layer, exposing the conductive layer.

摘要翻译： 形成位线接触通孔的方法。 该方法包括提供具有晶体管的衬底，该晶体管具有栅极，漏极区和源极区，形成覆盖漏极区的导电层，保形地形成覆盖衬底的绝缘阻挡层，覆盖在绝缘阻挡层上的绝缘层 并且通过介电层和绝缘阻挡层形成通孔，暴露导电层。

公开(公告)号：US06924204B2

公开(公告)日：2005-08-02

申请号：US10605304

申请日：2003-09-22

申请人： Tzu-Ching Tsai ,  Yi-Nan Chen

发明人： Tzu-Ching Tsai ,  Yi-Nan Chen

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/76 ,  H01L21/8242

CPC分类号： H01L27/1087

摘要： A method for fabricating a buried plate of a deep trench capacitor is described. A substrate having a deep trench therein is provided. A doped layer is formed on the surface of the deep trench and a material layer is formed on the doped layer. A passivation layer is formed on the sidewall of the deep trench that is not covered by the material layer. After removing the material layer, a thermal process is conducted to drive-in the dopants in the doped layer to the substrate to form a doped region, wherein the doped region serves as a buried plate of the deep trench capacitor. The doped layer also reacts with the substrate to form an oxide layer. After removing the oxide layer, a bottle-shaped deep trench is formed.

摘要翻译： 描述了制造深沟槽电容器的掩埋板的方法。 提供其中具有深沟槽的衬底。 在深沟槽的表面上形成掺杂层，并且在掺杂层上形成材料层。 钝化层形成在深沟槽的不被材料层覆盖的侧壁上。 在去除材料层之后，进行热处理以将掺杂层中的掺杂剂驱入衬底以形成掺杂区域，其中掺杂区域用作深沟槽电容器的掩埋板。 掺杂层也与衬底反应以形成氧化物层。 在去除氧化物层之后，形成瓶形深沟槽。

公开(公告)号：US06696344B1

公开(公告)日：2004-02-24

申请号：US10384947

申请日：2003-03-10

申请人： Shian-Jyh Lin ,  Hsin-Jung Ho ,  Chao-Sung Lai ,  Tzu-Ching Tsai

发明人： Shian-Jyh Lin ,  Hsin-Jung Ho ,  Chao-Sung Lai ,  Tzu-Ching Tsai

IPC分类号： H01L218242

CPC分类号： H01L27/1087

摘要： A method for forming a bottle-shaped trench. A semiconductor substrate having a pad stack layer thereon and a trench in a predetermined position is provided. A first dielectric layer is then formed on the lower sidewalls of the trench. Next, a second dielectric layer is formed to cover the upper sidewalls of the trench and the pad stack layer. Then, a protection layer is formed on the sidewalls portions of the second dielectric layer. The first dielectric layer is then removed to expose the lower portion of trench. Wet stripping is then carried out to increase the radius of the lower portion of the trench thereby forming a bottle-shaped trench.

摘要翻译： 一种用于形成瓶形沟槽的方法。 提供其上具有衬垫叠层的半导体衬底和处于预定位置的沟槽。 然后在沟槽的下侧壁上形成第一电介质层。 接下来，形成第二电介质层以覆盖沟槽和衬垫叠层层的上侧壁。 然后，在第二电介质层的侧壁部分上形成保护层。 然后去除第一电介质层以暴露沟槽的下部。 然后进行湿剥离以增加沟槽下部的半径，从而形成瓶形沟槽。

公开(公告)号：US20060127680A1

公开(公告)日：2006-06-15

申请号：US11348626

申请日：2006-02-07

申请人： Kaan-Lu Tzou ,  Tzu-Ching Tsai ,  Yi-Nan Chen

发明人： Kaan-Lu Tzou ,  Tzu-Ching Tsai ,  Yi-Nan Chen

IPC分类号： B32B17/06 ,  B32B9/00

CPC分类号： H01L27/1087 ,  C03C15/00 ,  H01L21/0332 ,  H01L21/3081

摘要： A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask layer disposed thereon. The first hard mask layer is composed of a first boro-silicate glass (BSG) layer and an overlying first undoped silicon glass (USG) layer and the second is composed of a second BSG layer and an overlying second USG layer. A polysilicon layer is formed overlying the multi-layer hard mask structure and then etched to form an opening therein. The multi-layer hard mask structure and the underlying substrate under the opening are successively etched to simultaneously form the deep trench in the substrate and remove the polysilicon layer. The multi-layer hard mask structure is removed.

公开(公告)号：US07029753B2

公开(公告)日：2006-04-18

申请号：US10727790

申请日：2003-12-04

申请人： Kaan-Lu Tzou ,  Tzu-Ching Tsai ,  Yi-Nan Chen

发明人： Kaan-Lu Tzou ,  Tzu-Ching Tsai ,  Yi-Nan Chen

IPC分类号： B23B17/06

CPC分类号： H01L27/1087 ,  C03C15/00 ,  H01L21/0332 ,  H01L21/3081

摘要： A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask layer disposed thereon. The first hard mask layer is composed of a first boro-silicate glass (BSG) layer and an overlying first undoped silicon glass (USG) layer and the second is composed of a second BSG layer and an overlying second USG layer. A polysilicon layer is formed overlying the multi-layer hard mask structure and then etched to form an opening therein. The multi-layer hard mask structure and the underlying substrate under the opening are successively etched to simultaneously form the deep trench in the substrate and remove the polysilicon layer. The multi-layer hard mask structure is removed.

摘要翻译： 一种用于蚀刻衬底中的深沟槽的方法。 形成覆盖在基板上的多层硬掩模结构，其包括第一硬掩模层和设置在其上的至少一个第二硬掩模层。 第一硬掩模层由第一硼硅酸盐玻璃（BSG）层和上覆的第一未掺杂硅玻璃（USG）层组成，第二硬质掩模层由第二BSG层和第二USG层组成。 形成覆盖多层硬掩模结构的多晶硅层，然后蚀刻以形成其中的开口。 连续蚀刻多层硬掩模结构和开口下方的底层基板，同时在衬底中形成深沟槽并去除多晶硅层。 去除多层硬掩模结构。