公开(公告)号：US11088285B2

公开(公告)日：2021-08-10

申请号：US16154644

申请日：2018-10-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US10037914B2

公开(公告)日：2018-07-31

申请号：US15655920

申请日：2017-07-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Ding-Lung Chen ,  Xing Hua Zhang

IPC: H01L27/088 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/06 ,  H01L29/417

CPC classification number: H01L21/76895 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L23/485 ,  H01L29/0649 ,  H01L29/401 ,  H01L29/41725 ,  H01L29/42356 ,  H01L29/456 ,  H01L29/66568 ,  H01L29/66659 ,  H01L29/7831

Abstract: A semiconductor transistor device includes a substrate having an active area and a trench isolation region surrounding the active area, a gate oxide layer, a gate, a spacer on a sidewall of the gate, a doping region on one side of the gate, an insulating cap layer covering the gate, the spacer and the doping region, and a redistributed contact layer (RCL) on the insulating cap layer. The RCL extends from the active area to the trench isolation region. A contact plug is disposed above the trench isolation region and is electrically connected to the gate or the doping region through the RCL.

公开(公告)号：US20170256652A1

公开(公告)日：2017-09-07

申请号：US15059311

申请日：2016-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： ZHIBIAO ZHOU ,  Shao-Hui Wu ,  Chen-Bin Lin ,  Ding-Lung Chen ,  Chi-Fa Ku

IPC: H01L29/786 ,  H01L21/426 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/426 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78609 ,  H01L29/78648 ,  H01L29/7869

Abstract: An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, agate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.

公开(公告)号：US11631771B2

公开(公告)日：2023-04-18

申请号：US17367637

申请日：2021-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US10056493B2

公开(公告)日：2018-08-21

申请号：US15853875

申请日：2017-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Ding-Lung Chen ,  Chen-Bin Lin ,  Sanpo Wang ,  Chung-Yuan Lee ,  Chi-Fa Ku

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L29/78609 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/788 ,  H01L29/7881 ,  H01L29/792

Abstract: A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a first dielectric layer covering on the oxide-semiconductor layer and the source/drain regions, a second gate between the two source/drain regions and partially covering the oxide-semiconductor layer, and a charge storage structure between the first gate electrode and the oxide-semiconductor layer.

公开(公告)号：US20180151571A1

公开(公告)日：2018-05-31

申请号：US15361479

申请日：2016-11-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： ZHIBIAO ZHOU ,  Ding-Lung Chen ,  Xing Hua Zhang ,  Shan Liu ,  RUNSHUN WANG ,  Chien-Fu Chen ,  Wei-Jen Wang ,  Chen-Hsien Hsu

IPC: H01L27/11 ,  H01L27/092 ,  H01L29/06

Abstract: The present invention provides a layout of a semiconductor transistor device including a first and a second active area, a first and a second gate, and a metal line. The first active and the second active area are extended along a first direction. The first gate and the second gate are extended along a second direction and crossed the first active area, to define two transistors. The two transistors are electrically connected with each other through a conductive layer. The metal line is disposed on the conductive layer and is electrically connected the two transistors respectively.

公开(公告)号：US09754828B1

公开(公告)日：2017-09-05

申请号：US15200000

申请日：2016-07-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Ding-Lung Chen ,  Xing Hua Zhang

IPC: H01L27/088 ,  H01L21/768 ,  H01L29/06 ,  H01L29/45 ,  H01L29/423 ,  H01L29/40 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76895 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L23/485 ,  H01L29/0649 ,  H01L29/401 ,  H01L29/41725 ,  H01L29/42356 ,  H01L29/456 ,  H01L29/66568 ,  H01L29/66659 ,  H01L29/7831

Abstract: A semiconductor transistor device includes a substrate having an active area and a trench isolation region surrounding the active area, a gate oxide layer, a gate, a spacer on a sidewall of the gate, a doping region on one side of the gate, an insulating cap layer covering the gate, the spacer and the doping region, and a redistributed contact layer (RCL) on the insulating cap layer. The RCL extends from the active area to the trench isolation region. A contact plug is disposed above the trench isolation region and is electrically connected to the gate or the doping region through the RCL.

公开(公告)号：US20170155861A1

公开(公告)日：2017-06-01

申请号：US14953411

申请日：2015-11-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： ZHIBIAO ZHOU ,  Chen-Bin Lin ,  Ding-Lung Chen

IPC: H04N5/378 ,  H04N5/225 ,  H04N9/04

CPC classification number: H04N5/374 ,  H01L27/14667 ,  H01L31/035218 ,  H04N5/3745 ,  H04N9/04

Abstract: An operating method of an image sensor includes the following steps. The image sensor includes at least one pixel unit. The pixel unit includes a photoelectric conversion unit, a first control unit, a capacitor unit, and a sensing unit. The photoelectric conversion unit includes a quantum film photoelectric conversion unit, and the first control unit includes an oxide semiconductor transistor. The capacitor unit is coupled to the first control unit, and the sensing unit is configured to sense signals at a sense point coupled between the first control unit and the sensing unit. The pixel unit is discharged before a readout operation. The capacitor unit is charged by electrons emitted from the photoelectric conversion unit when the photoelectric conversion unit is excited by light. Signals at the sense point are then sensed by the sensing unit.

公开(公告)号：US11342465B2

公开(公告)日：2022-05-24

申请号：US17140114

申请日：2021-01-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US20200083380A1

公开(公告)日：2020-03-12

申请号：US16154644

申请日：2018-10-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.