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    METHOD FOR FORMING A FINFET STRUCTURE
    2.
    发明申请
    METHOD FOR FORMING A FINFET STRUCTURE 审中-公开
    形成FINFET结构的方法

    公开(公告)号：US20150132966A1

    公开(公告)日：2015-05-14

    申请号：US14583813

    申请日：2014-12-29

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Hung-Lin Shih ,  Jei-Ming Chen ,  Chih-Chien Liu ,  Chin-Fu Lin ,  Kuan-Hsien Li

    IPC: H01L21/8234 ,  H01L29/40

    CPC classification number: H01L21/30604 ,  H01L21/823431 ,  H01L21/823462 ,  H01L29/401

    Abstract: A method for forming a FinFET structure includes providing a substrate, a first region and a second region being defined on the substrate, a first fin structure and a second fin structure being disposed on the substrate within the first region and the second region respectively. A first oxide layer cover the first fin structure and the second fin structure. Next a first protective layer and a second protective layer are entirely formed on the substrate and the first oxide layer in sequence, the second protective layer within the first region is removed, and the first protective layer within the first region is then removed. Afterwards, the first oxide layer covering the first fin structure and the second protective layer within the second region are removed simultaneously, and a second oxide layer is formed to cover the first fin structure.

    Abstract translation: 一种用于形成FinFET结构的方法包括提供衬底，第一区和限定在衬底上的第二区，分别在第一区和第二区内的衬底上设置第一鳍结构和第二鳍结构。 第一氧化物层覆盖第一鳍结构和第二鳍结构。 接下来，依次在基板和第一氧化物层上完全形成第一保护层和第二保护层，去除第一区域内的第二保护层，然后去除第一区域内的第一保护层。 之后，同时除去覆盖第二区域内的第一鳍结构和第二保护层的第一氧化物层，形成第二氧化物层以覆盖第一鳍结构。

    FIN STRUCTURE CUTTING PROCESS
    6.
    发明申请
    FIN STRUCTURE CUTTING PROCESS 有权
    FIN结构切割工艺

    公开(公告)号：US20170047244A1

    公开(公告)日：2017-02-16

    申请号：US15336811

    申请日：2016-10-28

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Tong-Jyun Huang ,  Rai-Min Huang ,  I-Ming Tseng ,  Kuan-Hsien Li ,  Chen-Ming Huang

    IPC: H01L21/762 ,  H01L21/308 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/3065 ,  H01L21/02

    CPC classification number: H01L21/76224 ,  H01L21/02271 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653

    Abstract: A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.

    Abstract translation: 翅片结构切割过程包括以下步骤。 在基板中形成有四个翅片结构，其中包括第一翅片结构，第二翅片结构，第三翅片结构和第四翅片结构的四个翅片结构彼此顺序并联。 执行第一鳍结构切割处理以去除第二鳍结构和第三鳍结构的顶部部分，从而由第二鳍结构形成第一凸起，以及由第三鳍结构形成的第二凸起。 执行第二鳍结构切割处理以完全去除第二凸起和第四鳍结构，但是将第一凸起保持在第一鳍结构旁边。 此外，本发明提供了一种通过所述方法形成的翅片结构。

    Fin structure and fin structure cutting process
    7.
    发明授权
    Fin structure and fin structure cutting process 有权
    翅片结构和翅片结构切割过程

    公开(公告)号：US09524909B2

    公开(公告)日：2016-12-20

    申请号：US14696494

    申请日：2015-04-27

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Tong-Jyun Huang ,  Rai-Min Huang ,  I-Ming Tseng ,  Kuan-Hsien Li ,  Chen-Ming Huang

    IPC: H01L29/06 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/02 ,  H01L27/088

    CPC classification number: H01L21/76224 ,  H01L21/02271 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653

    Abstract: A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.

    Abstract translation: 翅片结构切割过程包括以下步骤。 在基板中形成有四个翅片结构，其中包括第一翅片结构，第二翅片结构，第三翅片结构和第四翅片结构的四个翅片结构彼此顺序并联。 执行第一鳍结构切割处理以去除第二鳍结构和第三鳍结构的顶部部分，从而由第二鳍结构形成第一凸起，以及由第三鳍结构形成的第二凸起。 执行第二鳍结构切割处理以完全去除第二凸起和第四鳍结构，但是将第一凸起保持在第一鳍结构旁边。 此外，本发明提供了一种通过所述方法形成的翅片结构。

    Manufacturing method of patterned structure of semiconductor
    8.
    发明授权
    Manufacturing method of patterned structure of semiconductor 有权

    公开(公告)号：US10090398B2

    公开(公告)日：2018-10-02

    申请号：US15648439

    申请日：2017-07-12

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Rai-Min Huang ,  I-Ming Tseng ,  Tong-Jyun Huang ,  Kuan-Hsien Li

    IPC: H01L29/66 ,  H01L29/40 ,  H01L21/308 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/78

    Abstract: A method of fabricating a patterned structure of a semiconductor device includes the following steps: providing a substrate having a target layer thereon; forming a patterned sacrificial layer on the target layer, wherein the patterned sacrificial layer consists of a plurality of sacrificial features; forming spacers respectively on sidewalls of each of the sacrificial features, wherein all of the spacers are arranged to have a layout pattern; and transferring the layout pattern to the target layer so as to form a first feature and a second feature, wherein the first feature comprises a vertical segment and a horizontal segment, the second feature comprises a vertical segment and a horizontal segment, and a distance between the vertical segment of the first feature and the vertical segment of the second feature is less than a minimum feature size generated by an exposure apparatus.

    FIN STRUCTURE AND FIN STRUCTURE CUTTING PROCESS
    10.
    发明申请
    FIN STRUCTURE AND FIN STRUCTURE CUTTING PROCESS 有权
    FIN结构和熔体结构切割工艺

    公开(公告)号：US20160293491A1

    公开(公告)日：2016-10-06

    申请号：US14696494

    申请日：2015-04-27

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Tong-Jyun Huang ,  Rai-Min Huang ,  I-Ming Tseng ,  Kuan-Hsien Li ,  Chen-Ming Huang

    IPC: H01L21/8234 ,  H01L29/06 ,  H01L27/088 ,  H01L21/308 ,  H01L21/02

    CPC classification number: H01L21/76224 ,  H01L21/02271 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653

    Abstract: A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.

    Abstract translation: 翅片结构切割过程包括以下步骤。 四个翅片结构形成在基板中，其中包括第一翅片结构，第二翅片结构，第三翅片结构和第四翅片结构的四个翅片结构彼此顺序并联。 执行第一鳍结构切割处理以去除第二鳍结构和第三鳍结构的顶部部分，从而由第二鳍结构形成第一凸起，以及由第三鳍结构形成的第二凸起。 执行第二鳍结构切割处理以完全去除第二凸起和第四鳍结构，但是将第一凸起保持在第一鳍结构旁边。 此外，本发明提供了一种通过所述方法形成的翅片结构。

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