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公开(公告)号：US09673053B2
公开(公告)日：2017-06-06
申请号：US14549529
申请日：2014-11-20
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Rung-Yuan Lee , Yu-Ting Li , Jing-Yin Jhang , Chen-Yi Weng , Jia-Feng Fang , Yi-Wei Chen , Wei-Jen Wu , Po-Cheng Huang , Fu-Shou Tsai , Kun-Ju Li , Wen-Chin Lin , Chih-Chien Liu , Chih-Hsun Lin , Chun-Yuan Wu
IPC: H01L21/306 , H01L21/28
CPC classification number: H01L21/30625 , H01L21/28123 , H01L21/32115 , H01L21/3212
Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first material layer on the substrate; forming a stop layer on the first material layer; forming a second material layer on the stop layer; and performing a planarizing process to remove the second material layer, the stop layer, and part of the first material layer for forming a gate layer.
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公开(公告)号：US20160148816A1
公开(公告)日：2016-05-26
申请号：US14549529
申请日：2014-11-20
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Rung-Yuan Lee , Yu-Ting Li , Jing-Yin Jhang , Chen-Yi Weng , Jia-Feng Fang , Yi-Wei Chen , Wei-Jen Wu , Po-Cheng Huang , Fu-Shou Tsai , Kun-Ju Li , Wen-Chin Lin , Chih-Chien Liu , Chih-Hsun Lin , Chun-Yuan Wu
IPC: H01L21/306 , H01L21/28
CPC classification number: H01L21/30625 , H01L21/28123 , H01L21/32115 , H01L21/3212
Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first material layer on the substrate; forming a stop layer on the first material layer; forming a second material layer on the stop layer; and performing a planarizing process to remove the second material layer, the stop layer, and part of the first material layer for forming a gate layer.
Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供衬底; 在所述基板上形成第一材料层; 在所述第一材料层上形成停止层; 在所述停止层上形成第二材料层; 并且进行平面化处理以去除第二材料层，停止层以及用于形成栅极层的第一材料层的一部分。
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公开(公告)号：US09530871B1
公开(公告)日：2016-12-27
申请号：US15225836
申请日：2016-08-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Ming-Yueh Tsai , Jia-Feng Fang , Yi-Wei Chen , Jing-Yin Jhang , Rung-Yuan Lee , Chen-Yi Weng , Wei-Jen Wu
IPC: H01L21/8232 , H01L29/66 , H01L21/02 , H01L21/324
CPC classification number: H01L29/66795 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/324 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/7848 , H01L29/7851
Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.
Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有鳍状结构的基板; 在鳍状结构上形成外延层; 在外延层上形成第一接触蚀刻停止层（CESL）; 在外延层中形成源/漏区; 并在第一个CESL上形成第二个CESL。
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公开(公告)号：US09443757B1
公开(公告)日：2016-09-13
申请号：US14940120
申请日：2015-11-12
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Ming-Yueh Tsai , Jia-Feng Fang , Yi-Wei Chen , Jing-Yin Jhang , Rung-Yuan Lee , Chen-Yi Weng , Wei-Jen Wu
IPC: H01L29/78 , H01L21/768 , H01L29/161 , H01L29/16 , H01L29/165 , H01L29/08 , H01L23/535 , H01L29/66
CPC classification number: H01L29/66795 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/324 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/7848 , H01L29/7851
Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.
Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有鳍状结构的基板; 在鳍状结构上形成外延层; 在外延层上形成第一接触蚀刻停止层（CESL）; 在外延层中形成源/漏区; 并在第一个CESL上形成第二个CESL。
