公开(公告)号：US20160365245A1

公开(公告)日：2016-12-15

申请号：US14805639

申请日：2015-07-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC: H01L21/02 ,  H01L29/06 ,  H01L21/3205

CPC classification number: H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

Abstract translation: 提供一种用于填充半导体器件的间隙的方法和具有由其形成的绝缘间隙的半导体器件。 首先，设置具有多个突出部的硅基板，并且突出部通过预定深度的间隙彼此间隔开。 在硅衬底之上形成含氮化物层，用于覆盖作为衬里氮化物的间隙的突出部分和表面。 然后，在含氮化物层上形成非晶硅层。 在非晶硅层上形成绝缘层，并用绝缘层填充间隙。

公开(公告)号：US20180182862A1

公开(公告)日：2018-06-28

申请号：US15391048

申请日：2016-12-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Hui Lin ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC: H01L29/66 ,  H01L21/762 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213

CPC classification number: H01L29/66545 ,  H01L21/32055 ,  H01L21/321 ,  H01L21/32135 ,  H01L21/76224 ,  H01L21/823481 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for forming a semiconductor structure includes the following steps. First, a preliminary structure is provided. The preliminary structure includes a substrate and a plurality of fins formed on the substrate. Then, a first polysilicon layer is formed on the substrate. The first polysilicon layer covers at least portions of the fins. An amorphous silicon layer is formed on the first polysilicon layer.

公开(公告)号：US20170243780A1

公开(公告)日：2017-08-24

申请号：US15590114

申请日：2017-05-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

公开(公告)号：US10043888B2

公开(公告)日：2018-08-07

申请号：US15391048

申请日：2016-12-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Hui Lin ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC: H01L29/66 ,  H01L21/762 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L29/78 ,  H01L21/8234

CPC classification number: H01L29/66545 ,  H01L21/32134 ,  H01L21/76224 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for forming a semiconductor structure includes the following steps. First, a preliminary structure is provided. The preliminary structure includes a substrate and a plurality of fins formed on the substrate. Then, a first polysilicon layer is formed on the substrate. The first polysilicon layer covers at least portions of the fins. An amorphous silicon layer is formed on the first polysilicon layer.

公开(公告)号：US09685319B2

公开(公告)日：2017-06-20

申请号：US14805639

申请日：2015-07-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/78

CPC classification number: H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

公开(公告)号：US09349599B1

公开(公告)日：2016-05-24

申请号：US14537827

申请日：2014-11-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Feng Ku ,  Shao-Wei Wang ,  Yi-Hui Lin ,  Tsai-Yu Wen ,  Tsuo-Wen Lu ,  Yu-Ren Wang

IPC: H01L21/28 ,  H01L29/66

CPC classification number: H01L29/6656 ,  H01L21/28035

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having gate structure thereon, wherein the gate structure comprises a high-k dielectric layer; increasing an ambient pressure around the gate structure to a predetermined pressure by injecting a first gas; reducing the ambient pressure to a base pressure; and forming a spacer around the gate structure.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有栅极结构的衬底，其中栅极结构包括高k电介质层; 通过注入第一气体将栅极结构周围的环境压力增加到预定压力; 将环境压力降低到基础压力; 以及在所述栅极结构周围形成间隔物。

公开(公告)号：US09847247B2

公开(公告)日：2017-12-19

申请号：US15590114

申请日：2017-05-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

公开(公告)号：US09543408B1

公开(公告)日：2017-01-10

申请号：US14835730

申请日：2015-08-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Hui Lin ,  Keng-Jen Lin ,  Chun-Yao Yang ,  Yu-Ren Wang

IPC: H01L21/3205 ,  H01L29/66 ,  H01L21/02 ,  H01L21/265 ,  H01L21/324 ,  H01L21/3213 ,  H01L21/3215

CPC classification number: H01L29/66545 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/32055 ,  H01L21/32139 ,  H01L21/32155 ,  H01L21/324 ,  H01L23/544 ,  H01L29/66795 ,  H01L2223/54426 ,  H01L2223/54453

Abstract: A method of forming a patterned hark mask layer includes the following steps. A semiconductor substrate is provided. An amorphous silicon layer is formed on the semiconductor substrate. An implantation process is performed on the amorphous silicon layer. An annealing treatment is performed on the amorphous silicon layer after the implantation process. A patterned hard mask layer is formed on the amorphous silicon layer after the annealing treatment.

Abstract translation: 形成图案化掩模掩模层的方法包括以下步骤。 提供半导体衬底。 在半导体衬底上形成非晶硅层。 对非晶硅层进行注入工艺。 在植入处理之后对非晶硅层进行退火处理。 在退火处理之后，在非晶硅层上形成图案化的硬掩模层。

公开(公告)号：US20160133474A1

公开(公告)日：2016-05-12

申请号：US14537827

申请日：2014-11-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Feng Ku ,  Shao-Wei Wang ,  Yi-Hui Lin ,  Tsai-Yu Wen ,  Tsuo-Wen Lu ,  Yu-Ren Wang

IPC: H01L21/28 ,  H01L29/66

CPC classification number: H01L29/6656 ,  H01L21/28035

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having gate structure thereon, wherein the gate structure comprises a high-k dielectric layer; increasing an ambient pressure around the gate structure to a predetermined pressure by injecting a first gas; reducing the ambient pressure to a base pressure; and forming a spacer around the gate structure.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有栅极结构的衬底，其中栅极结构包括高k电介质层; 通过注入第一气体将栅极结构周围的环境压力增加到预定压力; 将环境压力降低到基础压力; 以及在所述栅极结构周围形成间隔物。