公开(公告)号：US06838216B2

公开(公告)日：2005-01-04

申请号：US10438370

申请日：2003-05-14

申请人： Uwe Griesinger ,  Mario Hennig ,  Jürgen Knobloch ,  Rainer Pforr ,  Manuel Vorwerk

发明人： Uwe Griesinger ,  Mario Hennig ,  Jürgen Knobloch ,  Rainer Pforr ,  Manuel Vorwerk

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00 ,  G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/29 ,  G03F7/70433

摘要： Auxiliary openings are assigned to openings on a mask to be transferred to a wafer. These auxiliary openings have a phase-shifting property, preferably between 160° and 200° with respect to the openings, and a cross section lying below the limiting dimension for the printing of the projection apparatus, so that the auxiliary openings themselves are not printed onto the wafer. However, the auxiliary openings do enhance the contrast of the aerial image, in particular of an associated, isolated or semi-isolated opening on the wafer. The auxiliary openings may have a distance from the opening that lies above the resolution limit of the projection apparatus but that is less than the coherence length of the light used for the projection. A phase-related utilization of the optical proximity effect results, which can produce elliptical structures from square openings on the mask when the auxiliary openings are disposed in the preferential direction.

公开(公告)号：US06466373B1

公开(公告)日：2002-10-15

申请号：US09677321

申请日：2000-09-29

申请人： Rainer Pforr ,  Christoph Friedrich ,  Klaus Ergenzinger ,  Fritz Gans ,  Uwe Griesinger ,  Wilhelm Maurer ,  Jürgen Knobloch

发明人： Rainer Pforr ,  Christoph Friedrich ,  Klaus Ergenzinger ,  Fritz Gans ,  Uwe Griesinger ,  Wilhelm Maurer ,  Jürgen Knobloch

IPC分类号： G02B2700

CPC分类号： G03F1/29 ,  G03F1/32 ,  G03F1/34 ,  G03F1/70 ,  G03F7/2026 ,  G03F7/70466

摘要： For lithographically producing the smallest structures at less than the exposure wavelengths in semiconductor fabrication, a double exposure is carried out using a thick phase mask and a trimming mask, the trimming mask further structures the phase-contrast lines produced by the phase mask. Besides transparent or opaque regions, the trimming mask also has phase-shifting regions. These surround transparent regions of the trimming mask through which the phase-contrast lines produced by the first mask are locally re-exposed, that is to say interrupted. The intensity profile of successive line sections is especially rich in contrast through the addition of the phase-shifting partially transparent regions on the second mask; the distances between the line sections can be reduced. The trimming mask, otherwise used only for larger structures, is therefore suitable for the configuration of the finest dimensionally critical structures.

摘要翻译： 为了在半导体制造中以小于曝光波长的方式平版印刷产生最小结构，使用厚相位掩模和修剪掩模进行双重曝光，修整掩模进一步构成由相位掩模产生的相位对比线。 除了透明或不透明区域之外，修整掩模还具有相移区域。 这些环绕着修整掩模的透明区域，由第一掩模产生的相位对应线通过该区域被局部再暴露，也就是说被中断。 通过在第二掩模上添加相移部分透明区域，连续线段的强度分布特别丰富; 可以减少线路部分之间的距离。 因此，修剪面罩，否则仅用于较大的结构，因此适用于最精细的尺寸关键结构的构造。

公开(公告)号：US06635388B1

公开(公告)日：2003-10-21

申请号：US09429837

申请日：1999-10-29

申请人： Christoph Friedrich ,  Uwe Griesinger ,  Rainer Pforr ,  Dietrich Widmann ,  Andreas Grassmann

发明人： Christoph Friedrich ,  Uwe Griesinger ,  Rainer Pforr ,  Dietrich Widmann ,  Andreas Grassmann

IPC分类号： G03F900

CPC分类号： G03F1/34 ,  G03F7/2022

摘要： The invention relates to a phase shift mask for lithographically producing small structures at the limit of a resolution that is predetermined by the wavelength of the exposure radiation. The phase shift mask has first regions A and second regions B that effect a phase-shift relative to the first regions. The second regions are arranged beside the first regions for producing a sudden phase shift along the boundaries between the first and the second regions. Individual first regions touch one another via corners at points, at which the second regions also touch one another via corners. The result is that the boundaries between first and second regions merge at these points and these points are opaque to the radiation. The invention makes it possible to expose extremely small contact holes with just a single exposure and thus leads to a reduction of costs in the fabrication of integrated semiconductor circuits.

摘要翻译： 本发明涉及一种用于光刻产生在由曝光辐射的波长预定的分辨率极限处的小结构的相移掩模。 相移掩模具有相对于第一区域进行相移的第一区域A和第二区域B. 第二区域布置在第一区域旁边，用于沿着第一和第二区域之间的边界产生突然的相移。 单个第一区域通过角点彼此接触，在第二区域也通过拐角彼此接触。 结果是第一和第二区域之间的边界在这些点处合并，并且这些点对辐射是不透明的。 本发明使得可以仅用一次曝光来暴露极小的接触孔，从而导致集成半导体电路的制造成本的降低。

公开(公告)号：US06660437B2

公开(公告)日：2003-12-09

申请号：US10158733

申请日：2002-05-30

申请人： Christoph Friedrich ,  Uwe Griesinger ,  Michael Heissmeier ,  Burkhard Ludwig ,  Molela Moukara ,  Rainer Pforr

发明人： Christoph Friedrich ,  Uwe Griesinger ,  Michael Heissmeier ,  Burkhard Ludwig ,  Molela Moukara ,  Rainer Pforr

IPC分类号： G03F900

CPC分类号： G03F1/30

摘要： An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±&Dgr; &agr;, whereby &Dgr; &agr; a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.

摘要翻译： 描述具有包含两个不透明段的分支结构的交替相位掩模。 两个透明表面片分别设置在片段的两侧或其部件上。 表面段设置有被偏移180°±Δα的相位，由此Δaa不大于25°。 表面段由相位位于相邻表面段的相位之间的至少一个透明表面边界段分开。

公开(公告)号：US20080304029A1

公开(公告)日：2008-12-11

申请号：US11760295

申请日：2007-06-08

申请人： Rainer Pforr ,  Thorsten Winkler ,  Ralf Ziebold ,  Wolfram Kostler ,  Jens Reichelt ,  Stefan Blawid ,  Sebastian Champigny ,  Manuel Vorwerk

发明人： Rainer Pforr ,  Thorsten Winkler ,  Ralf Ziebold ,  Wolfram Kostler ,  Jens Reichelt ,  Stefan Blawid ,  Sebastian Champigny ,  Manuel Vorwerk

IPC分类号： G03B27/14

CPC分类号： G03F7/705 ,  G03F1/36

摘要： In a method of adjusting an optical parameter of an exposure apparatus, a photolithographic projection is performed using an exposure apparatus and using a layout pattern so as to provide measured layout data with different focus settings of the exposure apparatus. An optical model is provided including at least one optical parameter and a simulated image is created by using the optical model and the layout pattern. The optical model is optimized by modifying the optical parameter.

摘要翻译： 在调整曝光装置的光学参数的方法中，使用曝光装置进行光刻投影并使用布局图案，以便提供具有不同曝光装置的焦点设置的测量的布局数据。 提供了包括至少一个光学参数的光学模型，并且通过使用光学模型和布局图案来创建模拟图像。 通过修改光学参数优化光学模型。

公开(公告)号：US07425396B2

公开(公告)日：2008-09-16

申请号：US10952885

申请日：2004-09-30

申请人： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

发明人： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： G03F9/7084 ,  G03F7/70633 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/54466 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

摘要翻译： 用于减少要被图案化的层的结构相对于参考层的结构的覆盖误差的方法包括形成在两层中彼此分配的标准测量标记，以确定重叠误差并设置用于确定的另外的测量标记 至少在当前层中投影系统的附加光学成像误差。 另外的测量标记具有适于通过从掩模投影到半导体衬底上将要传送的电路图案的选定结构的几何形状的几何形状。 成像误差以同样的方式影响电路结构和进一步的测量标记。 可以从测量的两个标准测量标记之间的位置偏差和标准测量标记与当前要构图的层的另一测量标记之间的测量位置偏差来计算后续曝光的对准校正。

公开(公告)号：US07393613B2

公开(公告)日：2008-07-01

申请号：US10791763

申请日：2004-03-04

申请人： Wolfgang Dettmann ,  Jörg Thiele ,  Rainer Pforr ,  Mario Hennig ,  Karsten Zeiler

发明人： Wolfgang Dettmann ,  Jörg Thiele ,  Rainer Pforr ,  Mario Hennig ,  Karsten Zeiler

IPC分类号： G03F1/00 ,  G03F1/14

CPC分类号： G03F7/705 ,  G03F1/70 ,  G03F7/70466

摘要： A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.

摘要翻译： 一组至少两个掩模，用于将结构图案的投影彼此配合到设置在半导体晶片上的相同感光层中。 第一掩模包括半透明或不透明的第一层，其布置在第一基板上，并且其中至少一个第一开口形成在第一位置，第一开口具有第一横向尺寸，该第一横向尺寸大于 用于投影结构图案的投影系统。 第二掩模包括半透明或不透明的第二层，其布置在第二基板上，并且其中在第二位置处形成分配给第一开口的至少一个虚拟结构，该虚拟结构具有第二横向尺寸，该第二横向尺寸较小 比投影系统的分辨率极限，其中第一掩模上的第一位置对应于第二掩模上的第二位置。

公开(公告)号：US20060181691A1

公开(公告)日：2006-08-17

申请号：US11339844

申请日：2006-01-26

申请人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

发明人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

IPC分类号： G03B27/54

CPC分类号： G03F7/70283 ,  G03F1/30 ,  G03F1/32 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125

摘要： An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

摘要翻译： 通过同时传输线间隔光栅和包括MUX空间的外围结构，可以实现成像质量的提高，其使用四极照明，其极以细长形式形成，其纵轴垂直于线的线的方向排列 光栅布置在掩模上。 相对于对比度，MEEF和处理窗口，线空间光栅的结构成像得到改善，而外围结构（特别是MUX空间）的几何保真度在宽的景深范围内是稳定的。

公开(公告)号：US07339652B2

公开(公告)日：2008-03-04

申请号：US11339844

申请日：2006-01-26

申请人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

发明人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

IPC分类号： G03B27/54 ,  G03B27/72 ,  G03B27/42

CPC分类号： G03F7/70283 ,  G03F1/30 ,  G03F1/32 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125

摘要： An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

摘要翻译： 通过同时传输线间隔光栅和包括MUX空间的外围结构，可以实现成像质量的提高，其使用四极照明，其极以细长形式形成，其纵轴垂直于线的线的方向排列 光栅布置在掩模上。 相对于对比度，MEEF和处理窗口，线空间光栅的结构成像得到改善，而外围结构（特别是MUX空间）的几何保真度在宽的景深范围内是稳定的。

公开(公告)号：US20080042171A1

公开(公告)日：2008-02-21

申请号：US11506205

申请日：2006-08-18

申请人： Sebastian Mosler ,  Mario Hennig ,  Karsten Zeiler ,  Thi Phuong Hoa Nguyen ,  Rainer Pforr ,  Jorg Thiele

发明人： Sebastian Mosler ,  Mario Hennig ,  Karsten Zeiler ,  Thi Phuong Hoa Nguyen ,  Rainer Pforr ,  Jorg Thiele

IPC分类号： H01L29/76 ,  H01L21/8234 ,  H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/088 ,  G03F1/30 ,  H01L27/0207 ,  H01L27/10885

摘要： Methods of forming transistor arrangements using alternating phase shift masks are provided. The mask may include two parallel opaque lines, a first transparent section separating the opaque lines and a second transparent section in the rest. The second transparent section may shift the phase with respect to the first transparent section by 180 degree. A phase conflict occurs along an edge between the first and the second transparent sections. A semiconductor substrate is patterned via the mask and, from the opaque lines functional active areas of a transistor pair and from the phase conflict edge, thereby resulting in a parasitic area. A separation gate is provided that is capable of switching off a parasitic transistor being formed within the parasitic area. Channel widths may be stabilized and maximized within dense transistor arrangements, for example, in a multiplexer portion of a sense amplifier arrangement for memory cell arrays.

摘要翻译： 提供了使用交替相移掩模形成晶体管布置的方法。 掩模可以包括两个平行的不透明线，分隔不透明线的第一透明部分和其余部分中的第二透明部分。 第二透明部分可以将相位相对于第一透明部分移位180度。 沿着第一和第二透明部分之间的边缘发生相位冲突。 通过掩模对半导体衬底进行图案化，并且从不透明线将晶体管对的功能有效区域和相冲突边缘图案化，由此导致寄生区域。 提供了一种能够关闭在寄生区域内形成的寄生晶体管的分离栅极。 通道宽度可以在致密晶体管布置中稳定和最大化，例如在用于存储单元阵列的读出放大器装置的多路复用器部分中。