公开(公告)号：US4021294A

公开(公告)日：1977-05-03

申请号：US678744

申请日：1976-04-21

申请人： Valentin Evstafievich Khadzhi ,  Evgeny Matveevich Tsyganov ,  Leonid Iosifovich Tsinober ,  Zhanneta Viktorovna Novozhilova ,  Galina Vasilievna Reshetova ,  Mikhail Isaakovich Samoilovich ,  Vladimir Petrovich Butuzov ,  Anatoly Alexandrovich Shaposhnikov ,  Margarita Vladimirovna Lelekova

发明人： Valentin Evstafievich Khadzhi ,  Evgeny Matveevich Tsyganov ,  Leonid Iosifovich Tsinober ,  Zhanneta Viktorovna Novozhilova ,  Galina Vasilievna Reshetova ,  Mikhail Isaakovich Samoilovich ,  Vladimir Petrovich Butuzov ,  Anatoly Alexandrovich Shaposhnikov ,  Margarita Vladimirovna Lelekova

IPC分类号： C30B7/00 ,  B01J17/04 ,  C01B33/12

CPC分类号： C30B7/00 ,  C30B29/18 ,  Y10S117/902 ,  Y10S117/905

摘要： A process for producing amethyst crystals involving growing of colorless quartz crystals by a hydrothermal method of a temperature drop in a high-pressure autoclave on crystalline quartz seed plates oriented parallel to the crystallographic planes of the major {1011} and minor {1101} rhombohedrons using crystalline quartz as a charge. Said growing is effected from aqueous solutions of potassium carbonate or potassium hydroxide having a concentration ranging from 4 to 7 wt.% and containing iron introduced into the autoclave in the form of metallic iron or in the form of its oxydic or hydroxydic compounds in an amount ranging from 5 to 30 g/l of the solution. The growing process is effected at a crystallization temperature within the range of from 300.degree. to 500.degree. C. under a pressure ranging from 200 to 1,700 kg/cm.sup.2 and a crystal growth rate of from 0.05 to 0.5 mm/day. It is advisable to introduce into the autoclave, prior to the crystal growing, lithium nitrite or lithium nitrate or manganese nitrate in an amount ranging from 1 to 10 g/l of the solution. The thus-grown colorless quartz crystals are exposed to an ionizing irridation. The process for growing crystals according to the present invention is well-reproducible, since it is performed at specfied physico-chemical parameters. The process of the present invention enables the production of amethyst crystals with a high color purity and a high transparency (i.e., with no cracks).

摘要翻译： 一种生产紫水晶的方法，涉及通过在高压高压釜中的温度降低的水热法生长无色石英晶体，晶体石英晶种板平行于主要{1011}和次要{1101}菱面体的晶面取向，使用 晶体石英作为电荷。 所述生长由浓度范围为4至7重量％的碳酸钾或氢氧化钾的水溶液进行，并且含有以金属铁的形式引入高压釜中的铁或其氧化或羟基化合物形式的量 范围为5至30g / l的溶液。 生长过程在300至500℃范围内的结晶温度下在200至1700kg / cm2的压力和0.05-0.5mm /天的晶体生长速率下进行。 建议在晶体生长之前将高压釜引入量为1至10g / l溶液的亚硝酸锂或硝酸锂或硝酸锰。 将如此生长的无色石英晶体暴露于电离刺激。 根据本发明的用于生长晶体的方法是可重现的，因为它在特定的物理化学参数下进行。 本发明的方法能够生产具有高色纯度和高透明度（即没有裂纹）的紫晶晶体。

公开(公告)号：US3960501A

公开(公告)日：1976-06-01

申请号：US433495

申请日：1974-01-15

申请人： Vladimir Petrovich Butuzov ,  Evgeny Konstantinovich Vatolkin ,  Leonid Alexandrovich Gordienko ,  Ernst Borisovich Feldman ,  Valentin Evstafievich Khadzhi ,  Anatoly Alexandrovich Shaposhnikov

发明人： Vladimir Petrovich Butuzov ,  Evgeny Konstantinovich Vatolkin ,  Leonid Alexandrovich Gordienko ,  Ernst Borisovich Feldman ,  Valentin Evstafievich Khadzhi ,  Anatoly Alexandrovich Shaposhnikov

IPC分类号： C30B7/00 ,  B01D9/02 ,  B01J17/04

CPC分类号： C30B7/00 ,  Y10T117/1008 ,  Y10T117/1092 ,  Y10T117/1096

摘要： An apparatus for growing crystals from hydrothermal solutions comprises a vertically extending autoclave having a crystallization zone in its top portion and a dissolution zone in its bottom portion. The autoclave is surrounded by a heat insulation layer, is provided with a system of heating elements and is enclosed in a thermostatically controlled chamber which is divided into vertically extending sections. Each section is provided with a heating and thermostatic control system so as to ensure the maintenance of constant and different temperature values in each section required to create and maintain the desired temperature fields in the crystallization and dissolution zones of the autoclave.

摘要翻译： 用于从水热溶液中生长晶体的装置包括垂直延伸的高压釜，其顶部具有结晶区和底部的溶解区。 高压釜被隔热层包围，设置有加热元件系统，并被封闭在恒温控制室中，该室被分成垂直延伸部分。 每个部分都设有一个加热和恒温控制系统，以保证在高压灭菌器的结晶和溶解区域中产生和保持所需温度场所需的每个部分中保持恒定和不同的温度值。