公开(公告)号：US11114277B2

公开(公告)日：2021-09-07

申请号：US16891256

申请日：2020-06-03

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Jun Lu ,  Frank Sinclair ,  Eric D. Hermanson ,  Joseph E. Pierro ,  Michael D. Johnson ,  Michael S. DeLucia ,  Antonella Cucchetti

IPC: H01J37/317 ,  H01J27/08 ,  H01J1/50 ,  H01J37/08

Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

公开(公告)号：US10741361B2

公开(公告)日：2020-08-11

申请号：US16554893

申请日：2019-08-29

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Jun Lu ,  Frank Sinclair ,  Eric D. Hermanson ,  Joseph E. Pierro ,  Michael D. Johnson ,  Michael S. DeLucia ,  Antonella Cucchetti

IPC: H01J37/317 ,  H01J27/08 ,  H01J1/50 ,  H01J37/08

Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

公开(公告)号：US20190385811A1

公开(公告)日：2019-12-19

申请号：US16554893

申请日：2019-08-29

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Jun Lu ,  Frank Sinclair ,  Eric D. Hermanson ,  Joseph E. Pierro ,  Michael D. Johnson ,  Michael S. DeLucia ,  Antonella Cucchetti

IPC: H01J37/317 ,  H01J1/50 ,  H01J27/08

Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

公开(公告)号：US10192727B2

公开(公告)日：2019-01-29

申请号：US15471507

申请日：2017-03-28

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Frank Sinclair ,  Joseph C. Olson ,  Costel Biloiu ,  Alexandre Likhanskii ,  Peter F. Kurunczi

IPC: H01J37/05 ,  H01J49/22 ,  H01J49/06 ,  H01J37/317 ,  H01J49/10

Abstract: An electrodynamic mass analysis system which has the capability of filtering unwanted species from an extracted ion beam without the use of a mass analyzer magnet is disclosed. The electrodynamic mass analysis system includes an ion source and an electrode disposed outside the ion source. The ion source and the electrode are biased relative to one another so as to emit pulses of ions. Each of these pulses enters a tube where each ion travels at a speed related to its mass. Thus, ions of the same mass travel in clusters through the tube. Ions reach the distal end of the tube separated temporally and spatially from one another based on their mass. The ions then enter a deflector, which is energized so as to allow the cluster of ions having the desired mass to pass through a resolving aperture disposed at the exit of the deflector.

公开(公告)号：US20180211808A1

公开(公告)日：2018-07-26

申请号：US15936966

申请日：2018-03-27

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Jun Lu ,  Frank Sinclair ,  Eric D. Hermanson ,  Joseph E. Pierro ,  Michael D. Johnson ,  Michael S. DeLucia ,  Antonella Cucchetti

IPC: H01J27/20 ,  H01J37/317 ,  H01J27/02 ,  H01J1/50 ,  H01J27/08

CPC classification number: H01J37/3171 ,  H01J1/50 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/24542 ,  H01J2237/30472

Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

公开(公告)号：US09905396B1

公开(公告)日：2018-02-27

申请号：US15296242

申请日：2016-10-18

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Frank Sinclair ,  Daniel Tieger ,  Edward W. Bell ,  Robert Lindberg

IPC: H01J3/26 ,  H01J23/09 ,  H01J27/02 ,  G21K5/02 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0475

Abstract: An apparatus an ion beam generator to provide an ion beam. A scanning system may receive the ion beam and provide a scanned beam. An electrode may receive the scanned beam. At least a portion of the electrode is normal to a propagation direction of the scanned beam. The portion of the electrode that is normal to the propagation direction the scan beam may have a curved shape.

公开(公告)号：US09793087B2

公开(公告)日：2017-10-17

申请号：US14849813

申请日：2015-09-10

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： James S. Buff ,  Victor Benveniste ,  Frank Sinclair

IPC: H01J37/147 ,  H01J37/14 ,  H01J37/317

CPC classification number: H01J37/1475 ,  H01J37/14 ,  H01J37/1471 ,  H01J37/1478 ,  H01J37/3171 ,  H01J2237/1415 ,  H01J2237/152 ,  H01J2237/31701

Abstract: A method may include: generating an ion beam from an ion source, the ion beam having an initial direction of propagation; deflecting the ion beam at an initial angle of inclination with respect to the initial direction of propagation; passing the ion beam through an aperture in a magnetic assembly; and generating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation.

公开(公告)号：US20170169987A1

公开(公告)日：2017-06-15

申请号：US14966227

申请日：2015-12-11

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： William Davis LEE ,  Frank Sinclair

IPC: H01J37/08

CPC classification number: H01J37/12 ,  H01J37/05 ,  H01J37/08 ,  H01J37/1477 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/04924 ,  H01J2237/121

Abstract: Provided herein are approaches for controlling a charged particle beam using a series of electrodes including a plurality of different shapes. In one approach, an electrostatic optical element includes a first set of electrodes having a first electrode shape for parallelizing and deflecting the charged particle beam using a first set of electrodes having a first electrode shape, such as a concave or convex profile. The electrostatic optical element further includes a second set of electrodes adjacent the first set of electrodes for accelerating or decelerating the charged particle beam along a beamline, wherein the second set of electrodes include a cylindrical shape. In one approach, a power supply is electrically connected to the first and second sets of electrodes, the power supply arranged to enable independent voltage/current control.

公开(公告)号：US20160168748A1

公开(公告)日：2016-06-16

申请号：US14566085

申请日：2014-12-10

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Frank Sinclair ,  Peter L. Kellerman

IPC: C30B15/26 ,  C30B15/06 ,  C30B29/06 ,  C30B15/34

CPC classification number: C30B15/26 ,  C30B15/06 ,  C30B29/06 ,  G01N23/207

Abstract: An apparatus to monitor thickness of a crystalline sheet grown from a melt. The apparatus may include a process chamber configured to house the melt and crystalline sheet; an x-ray source disposed on a first side of the crystalline sheet and configured to deliver a first beam of x-rays that penetrate the crystalline sheet from a first surface to a second surface opposite the first surface, at a first angle of incidence with respect to the first surface; and an x-ray detector disposed on the first side of the crystalline sheet and configured to intercept a second beam of x-rays that are generated by reflection of the first beam of x-rays from the crystalline sheet at an angle of reflection with respect to the first surface, wherein a sum of the angle of incidence and the angle of reflection satisfies the equation λ=2d sin θ.

Abstract translation: 监测从熔体生长的结晶片的厚度的装置。 设备可以包括处理室，其被配置为容纳熔体和结晶片; x射线源，其设置在所述结晶片的第一侧上，并且被配置为以与所述第一表面相对的第一表面向所述第一表面穿过所述结晶片的第一射线束以与所述第一表面相反的第二表面， 尊重第一面; 以及x射线检测器，其设置在所述结晶片的第一侧上并且被配置为截取通过以与所述晶片的相反的角度反射所述第一X射线束而产生的第二X射线束 到第一表面，其中入射角和反射角的和满足等式λ=2dsinθ。

公开(公告)号：US20160160344A1

公开(公告)日：2016-06-09

申请号：US14091510

申请日：2013-11-27

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Connie P. Wang ,  Paul Murphy ,  Paul Sullivan ,  Ludovic Godet ,  Frank Sinclair ,  Morgan Evans

IPC: C23C14/48 ,  C23C14/58 ,  C23C14/02 ,  H01B13/00 ,  H01B12/02

CPC classification number: C23C14/48 ,  C23C14/025 ,  C23C14/5806 ,  H01B12/02 ,  H01B13/0016 ,  H01B13/0036 ,  H01L39/143 ,  H01L39/2464

Abstract: A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.

Abstract translation: 一种形成超导体带的方法，包括在衬底上沉积超导体层，在超导体层的表面上形成包含第一金属的金属层，并将合金种类注入金属层中，其中第一金属形成金属合金 植入合金种类后。