公开(公告)号：US08069430B2

公开(公告)日：2011-11-29

申请号：US12546959

申请日：2009-08-25

申请人： Victor Moroz ,  Xi-Wei Lin ,  Dipankar Pramanik

发明人： Victor Moroz ,  Xi-Wei Lin ,  Dipankar Pramanik

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  H01L21/823807

摘要： Roughly described, methods and systems for improving integrated circuit layouts and fabrication processes in order to better account for stress effects. Dummy features can be added to a layout either in order to improve uniformity, or to relax known undesirable stress, or to introduce known desirable stress. The dummy features can include dummy diffusion regions added to relax stress, and dummy trenches added either to relax or enhance stress. A trench can relax stress by filling it with a stress-neutral material or a tensile strained material. A trench can increase stress by filling it with a compressive strained material. Preferably dummy diffusion regions and stress relaxation trenches are disposed longitudinally to at least the channel regions of N-channel transistors, and transversely to at least the channel regions of both N-channel and P-channel transistors. Preferably stress enhancement trenches are disposed longitudinally to at least the channel regions of P-channel transistors.

摘要翻译： 大致描述了改进集成电路布局和制造工艺的方法和系统，以便更好地解决应力影响。 为了改善均匀性或放松已知的不良应力或引入已知的所需应力，可将虚拟特征添加到布局中。 虚拟特征可以包括添加以放松应力的虚拟扩散区域，并且添加虚拟沟槽以放松或增强应力。 沟槽可以通过用应力中性材料或拉伸应变材料填充来缓解应力。 沟槽可以通过用压缩应变材料填充来增加应力。 优选地，虚拟扩散区域和应力松弛沟槽纵向设置在N沟道晶体管的至少沟道区域上，并横向于N沟道和P沟道晶体管的至少沟道区域。 优选地，应力增强沟槽纵向设置在至少P沟道晶体管的沟道区域上。

公开(公告)号：US07897479B2

公开(公告)日：2011-03-01

申请号：US12207349

申请日：2008-09-09

申请人： Xi-Wei Lin ,  Dipankar Pramanik ,  Victor Moroz

发明人： Xi-Wei Lin ,  Dipankar Pramanik ,  Victor Moroz

IPC分类号： H01L21/76 ,  H01L29/00

CPC分类号： H01L21/823878 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7846

摘要： Roughly described, methods and systems for improving integrated circuit layouts and fabrication processes in order to better account for stress effects. Dummy features can be added to a layout either in order to improve uniformity, or to relax known undesirable stress, or to introduce known desirable stress. The dummy features can include dummy diffusion regions added to relax stress, and dummy trenches added either to relax or enhance stress. A trench can relax stress by filling it with a stress-neutral material or a tensile strained material. A trench can increase stress by filling it with a compressive strained material. Preferably dummy diffusion regions and stress relaxation trenches are disposed longitudinally to at least the channel regions of N-channel transistors, and transversely to at least the channel regions of both N-channel and P-channel transistors. Preferably stress enhancement trenches are disposed longitudinally to at least the channel regions of P-channel transistors.

摘要翻译： 大致描述了改进集成电路布局和制造工艺的方法和系统，以便更好地解决应力影响。 为了改善均匀性或放松已知的不良应力或引入已知的所需应力，可将虚拟特征添加到布局中。 虚拟特征可以包括添加以放松应力的虚拟扩散区域，并且添加虚拟沟槽以放松或增强应力。 沟槽可以通过用应力中性材料或拉伸应变材料填充来缓解应力。 沟槽可以通过用压缩应变材料填充来增加应力。 优选地，虚拟扩散区域和应力松弛沟槽纵向设置在至少N沟道晶体管的沟道区域上，并横向于N沟道和P沟道晶体管的至少沟道区域。 优选地，应力增强沟槽纵向设置在至少P沟道晶体管的沟道区域上。

公开(公告)号：US20100019317A1

公开(公告)日：2010-01-28

申请号：US12573308

申请日：2009-10-05

申请人： Victor Moroz ,  Dipankar Pramanik ,  Xi-Wei Lin

发明人： Victor Moroz ,  Dipankar Pramanik ,  Xi-Wei Lin

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/7846 ,  H01L29/7848

摘要： Roughly described, methods and systems for improving integrated circuit layouts and fabrication processes in order to better account for stress effects. Dummy features can be added to a layout either in order to improve uniformity, or to relax known undesirable stress, or to introduce known desirable stress. The dummy features can include dummy diffusion regions added to relax stress, and dummy trenches added either to relax or enhance stress. A trench can relax stress by filling it with a stress-neutral material or a tensile strained material. A trench can increase stress by filling it with a compressive strained material. Preferably dummy diffusion regions and stress relaxation trenches are disposed longitudinally to at least the channel regions of N-channel transistors, and transversely to at least the channel regions of both N-channel and P-channel transistors. Preferably stress enhancement trenches are disposed longitudinally to at least the channel regions of P-channel transistors.

摘要翻译： 大致描述了改进集成电路布局和制造工艺的方法和系统，以便更好地解决应力影响。 为了改善均匀性或放松已知的不良应力或引入已知的所需应力，可将虚拟特征添加到布局中。 虚拟特征可以包括添加以放松应力的虚拟扩散区域，并且添加虚拟沟槽以放松或增强应力。 沟槽可以通过用应力中性材料或拉伸应变材料填充来缓解应力。 沟槽可以通过用压缩应变材料填充来增加应力。 优选地，虚拟扩散区域和应力松弛沟槽纵向设置在N沟道晶体管的至少沟道区域上，并横向于N沟道和P沟道晶体管的至少沟道区域。 优选地，应力增强沟槽纵向设置在至少P沟道晶体管的沟道区域上。

公开(公告)号：US20080297237A1

公开(公告)日：2008-12-04

申请号：US11757338

申请日：2007-06-01

申请人： Victor Moroz ,  Dipankar Pramanik ,  Kishore Singhal ,  Xi-Wei Lin

发明人： Victor Moroz ,  Dipankar Pramanik ,  Kishore Singhal ,  Xi-Wei Lin

IPC分类号： G05F3/02

CPC分类号： G06F17/5068 ,  G06F17/5036

摘要： An automated method for compensating for process-induced variations in threshold voltage and drive current in a MOSFET integrated circuit. The method's first step is selecting a transistor for analysis from the array. The method loops among the transistors of the array as desired. Next the design of the selected transistor is analyzed, including the steps of determining threshold voltage variations induced by layout neighborhood; determining drive current variations induced by layout neighborhood. The method then proceeds by attempting to compensate for any determined variations by varying the length of the transistor gate. The method can further include the step of identifying any shortcoming in compensation by varying contact spacing.

摘要翻译： 用于补偿MOSFET集成电路中阈值电压和驱动电流的过程引起的变化的自动化方法。 该方法的第一步是从阵列中选择一个用于分析的晶体管。 该方法根据需要在阵列的晶体管之间循环。 接下来分析所选择的晶体管的设计，包括确定由布局邻域引起的阈值电压变化的步骤; 确定由布局邻域引起的驱动电流变化。 该方法然后通过改变晶体管栅极的长度来尝试补偿任何确定的变化。 该方法还可以包括通过改变接触间距来识别补偿中的任何缺点的步骤。

公开(公告)号：US20070202652A1

公开(公告)日：2007-08-30

申请号：US11364391

申请日：2006-02-27

申请人： Victor Moroz ,  Dipankar Pramanik ,  Xi-Wei Lin

发明人： Victor Moroz ,  Dipankar Pramanik ,  Xi-Wei Lin

IPC分类号： H01L21/336

CPC分类号： H01L21/823807 ,  H01L21/823878 ,  H01L29/7846

摘要： Roughly described, transistor channel regions are elevated over the level of certain adjacent STI regions. Preferably the STI regions that are transversely adjacent to the diffusion regions are suppressed, as are STI regions that are longitudinally adjacent to N-channel diffusion regions. Preferably STI regions that are longitudinally adjacent to P-channel diffusions are not suppressed; preferably they have an elevation that is at least as high as that of the diffusion regions.

摘要翻译： 粗略描述，晶体管沟道区域在某些相邻STI区域的水平上升高。 优选地，与扩散区横向相邻的STI区域被抑制，与N沟道扩散区域纵向相邻的STI区也是如此。 优选地，与P沟道扩散纵向相邻的STI区域不被抑制; 优选地，它们具有至少与扩散区域相同的高度。

公开(公告)号：US08686512B2

公开(公告)日：2014-04-01

申请号：US13221747

申请日：2011-08-30

申请人： Victor Moroz ,  Dipankar Pramanik ,  Xi-Wei Lin

发明人： Victor Moroz ,  Dipankar Pramanik ,  Xi-Wei Lin

IPC分类号： H01L27/092

CPC分类号： H01L21/823807 ,  H01L21/823878 ,  H01L29/7846

摘要： Roughly described, transistor channel regions are elevated over the level of certain adjacent STI regions. Preferably the STI regions that are transversely adjacent to the diffusion regions are suppressed, as are STI regions that are longitudinally adjacent to N-channel diffusion regions. Preferably STI regions that are longitudinally adjacent to P-channel diffusions are not suppressed; preferably they have an elevation that is at least as high as that of the diffusion regions.

摘要翻译： 粗略描述，晶体管沟道区域在某些相邻STI区域的水平上升高。 优选地，与扩散区横向相邻的STI区域被抑制，与N沟道扩散区域纵向相邻的STI区也是如此。 优选地，与P沟道扩散纵向相邻的STI区域不被抑制; 优选地，它们具有至少与扩散区域相同的高度。

公开(公告)号：US08219961B2

公开(公告)日：2012-07-10

申请号：US13112837

申请日：2011-05-20

申请人： Victor Moroz ,  Dipankar Pramanik ,  Kishore Singhal ,  Xi-Wei Lin

发明人： Victor Moroz ,  Dipankar Pramanik ,  Kishore Singhal ,  Xi-Wei Lin

IPC分类号： G06F9/455 ,  G06F17/50 ,  G06F11/22

CPC分类号： G06F17/5068 ,  G06F17/5036

摘要： An automated method for compensating for process-induced variations in threshold voltage and drive current in a MOSFET integrated circuit. The method's first step is selecting a transistor for analysis from the array. The method loops among the transistors of the array as desired. Next the design of the selected transistor is analyzed, including the steps of determining threshold voltage variations induced by layout neighborhood; determining drive current variations induced by layout neighborhood. The method then proceeds by attempting to compensate for any determined variations by varying the length of the transistor gate. The method can further include the step of identifying any shortcoming in compensation by varying contact spacing.

摘要翻译： 用于补偿MOSFET集成电路中阈值电压和驱动电流的过程引起的变化的自动化方法。 该方法的第一步是从阵列中选择一个用于分析的晶体管。 该方法根据需要在阵列的晶体管之间循环。 接下来分析所选晶体管的设计，包括确定由布局邻域引起的阈值电压变化的步骤; 确定由布局邻域引起的驱动电流变化。 该方法然后通过改变晶体管栅极的长度来尝试补偿任何确定的变化。 该方法还可以包括通过改变接触间距来识别补偿中的任何缺点的步骤。

公开(公告)号：US20090217217A1

公开(公告)日：2009-08-27

申请号：US12433759

申请日：2009-04-30

申请人： Xi-Wei Lin ,  Victor Moroz ,  Dipankar Pramanik

发明人： Xi-Wei Lin ,  Victor Moroz ,  Dipankar Pramanik

IPC分类号： G06F17/50

CPC分类号： G06F17/5036

摘要： Roughly described, standard SPICE models can be modified by substituting a different stress analyzer to better model the stress adjusted characteristics of a transistor. A first, standard, stress-sensitive, transistor model is used to develop a mathematical relationship between the first transistor performance measure and one or more instance parameters that are available as inputs to a second, stress-insensitive, transistor model. The second transistor model may for example be the same as the first model, with its stress sensitivity disabled. Thereafter, a substitute stress analyzer can be used to determine a stress-adjusted value for the first performance measure, and the mathematical relationship can be used to convert that value into specific values for the one or more instance parameters. These values are then provided to the second transistor model for use in simulating the characteristics of the particular transistor during circuit simulation.

摘要翻译： 粗略描述，可以通过替代不同的应力分析器来更好地模拟晶体管的应力调整特性来修改标准SPICE模型。 第一，标准，应力敏感的晶体管模型用于开发第一晶体管性能测量与可用作第二，不应力敏感晶体管模型的输入的一个或多个实例参数之间的数学关系。 第二晶体管模型可以例如与第一模型相同，其应力灵敏度被禁用。 此后，可以使用替代应力分析器来确定用于第一性能测量的应力调整值，并且可以使用数学关系将该值转换为一个或多个实例参数的特定值。 然后将这些值提供给第二晶体管模型，以用于在电路仿真期间模拟特定晶体管的特性。

公开(公告)号：US20090007043A1

公开(公告)日：2009-01-01

申请号：US12207349

申请日：2008-09-09

申请人： Xi-Wei Lin ,  Dipankar Pramanik ,  Victor Moroz

发明人： Xi-Wei Lin ,  Dipankar Pramanik ,  Victor Moroz

IPC分类号： G06F17/50 ,  H01L21/76

CPC分类号： H01L21/823878 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7846

摘要： Roughly described, methods and systems for improving integrated circuit layouts and fabrication processes in order to better account for stress effects. Dummy features can be added to a layout either in order to improve uniformity, or to relax known undesirable stress, or to introduce known desirable stress. The dummy features can include dummy diffusion regions added to relax stress, and dummy trenches added either to relax or enhance stress. A trench can relax stress by filling it with a stress-neutral material or a tensile strained material. A trench can increase stress by filling it with a compressive strained material. Preferably dummy diffusion regions and stress relaxation trenches are disposed longitudinally to at least the channel regions of N-channel transistors, and transversely to at least the channel regions of both N-channel and P-channel transistors. Preferably stress enhancement trenches are disposed longitudinally to at least the channel regions of P-channel transistors.

摘要翻译： 大致描述了改进集成电路布局和制造工艺的方法和系统，以便更好地解决应力影响。 为了改善均匀性或放松已知的不良应力或引入已知的所需应力，可将虚拟特征添加到布局中。 虚拟特征可以包括添加以放松应力的虚拟扩散区域，并且添加虚拟沟槽以放松或增强应力。 沟槽可以通过用应力中性材料或拉伸应变材料填充来缓解应力。 沟槽可以通过用压缩应变材料填充来增加应力。 优选地，虚拟扩散区域和应力松弛沟槽纵向设置在N沟道晶体管的至少沟道区域上，并横向于N沟道和P沟道晶体管的至少沟道区域。 优选地，应力增强沟槽纵向设置在至少P沟道晶体管的沟道区域上。

公开(公告)号：US20110309453A1

公开(公告)日：2011-12-22

申请号：US13221747

申请日：2011-08-30

申请人： Victor Moroz ,  Dipankar Pramanik ,  Xi-Wei Lin

发明人： Victor Moroz ,  Dipankar Pramanik ,  Xi-Wei Lin

IPC分类号： H01L27/092

CPC分类号： H01L21/823807 ,  H01L21/823878 ,  H01L29/7846

摘要： Roughly described, transistor channel regions are elevated over the level of certain adjacent STI regions. Preferably the STI regions that are transversely adjacent to the diffusion regions are suppressed, as are STI regions that are longitudinally adjacent to N-channel diffusion regions. Preferably STI regions that are longitudinally adjacent to P-channel diffusions are not suppressed; preferably they have an elevation that is at least as high as that of the diffusion regions.

摘要翻译： 粗略描述，晶体管沟道区域在某些相邻STI区域的水平上升高。 优选地，与扩散区横向相邻的STI区域被抑制，与N沟道扩散区域纵向相邻的STI区也是如此。 优选地，与P沟道扩散纵向相邻的STI区域不被抑制; 优选地，它们具有至少与扩散区域相同的高度。