System for transient voltage suppressors
    5.
    发明授权
    System for transient voltage suppressors 有权
    瞬态电压抑制器系统

    公开(公告)号:US08530902B2

    公开(公告)日:2013-09-10

    申请号:US13281638

    申请日:2011-10-26

    IPC分类号: H01L29/15

    摘要: A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

    摘要翻译: 提供了形成碳化硅瞬态电压抑制器(TVS)组件的方法和用于瞬态电压抑制器(TVS)组件的系统。 TVS组件包括台面结构中的半导体管芯,其包括具有第一极性的导电率的第一宽带隙半导体的第一层,具有第二极导电率的第一或第二宽带隙半导体的第二层 极性与第一层电接触,其中第二极性不同于第一极性。 TVS组件还包括具有与第二层电接触的第一极性的导电性的第一,第二或第三宽带隙半导体的第三层。 相对于具有第一极性的导电性的层,具有第二极性的导电性的层被轻掺杂。

    SENSORS FOR HIGH-TEMPERATURE ENVIRONMENTS AND METHOD FOR ASSEMBLING SAME
    7.
    发明申请
    SENSORS FOR HIGH-TEMPERATURE ENVIRONMENTS AND METHOD FOR ASSEMBLING SAME 有权
    高温环境传感器及其装配方法

    公开(公告)号:US20120243182A1

    公开(公告)日:2012-09-27

    申请号:US13069509

    申请日:2011-03-23

    CPC分类号: G01D11/245 Y10T29/49002

    摘要: A sensor assembly includes an outer housing and at least one high-impedance sensing device positioned within the outer housing. The sensor assembly also includes a buffering circuit comprising at least one wide bandgap semiconductor device positioned within the outer housing. The buffering circuit is operatively coupled to the at least one high-impedance sensing device.

    摘要翻译: 传感器组件包括外壳和位于外壳内的至少一个高阻抗感测装置。 传感器组件还包括缓冲电路,该缓冲电路包括位于外部壳体内的至少一个宽带隙半导体器件。 缓冲电路可操作地耦合到至少一个高阻抗感测装置。

    HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD
    8.
    发明申请
    HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD 有权
    异体结构设备及相关方法

    公开(公告)号:US20120171824A1

    公开(公告)日:2012-07-05

    申请号:US13418566

    申请日:2012-03-13

    IPC分类号: H01L21/335

    摘要: A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first region and a second region to form a third region. A charge is depleted from the two dimensional electron gas (2DEG) channel in the third region to form a reversibly electrically non-conductive pathway from the first region to the second region. On applying a voltage potential to a gate electrode proximate to the third region allows electrical current to flow from the first region to the second region.

    摘要翻译: 提供了一种制造异质结构器件的方法,其包括将离子注入到多层结构的表面的一部分中。 碘离子注入第一区域和第二区域之间以形成第三区域。 电荷从第三区域中的二维电子气(2DEG)通道中消耗,以形成从第一区域到第二区域的可逆的非导电通路。 在向靠近第三区域的栅电极施加电压电位时,允许电流从第一区域流到第二区域。

    Gas sensor and method of making
    9.
    发明授权
    Gas sensor and method of making 有权
    气体传感器及制作方法

    公开(公告)号:US07827852B2

    公开(公告)日:2010-11-09

    申请号:US11961092

    申请日:2007-12-20

    IPC分类号: G01N7/10

    摘要: A gas sensor is disclosed. The gas sensor includes a gas sensing layer including doped oxygen deficient tungsten oxide and a dopant selected from the group consisting of Re, Ni, Cr, V, W, and a combination thereof, at least one electrode positioned within a layer of titanium, and a response modification layer. The at least one electrode is in communication with the gas sensing layer and the gas sensing layer is capable of detecting at least one gas selected from the group consisting of NO, NO2, SOx O2, H2O, and NH3. A method of fabricating the gas sensor is also disclosed.

    摘要翻译: 公开了一种气体传感器。 气体传感器包括气体感测层,其包括掺杂的氧缺乏氧化钨和选自Re,Ni,Cr,V,W及其组合的掺杂剂,位于钛层内的至少一个电极,以及 响应修改层。 所述至少一个电极与所述气体感测层连通,并且所述气体感测层能够检测至少一种选自NO,NO 2,SO x O 2,H 2 O和NH 3的气体。 还公开了一种制造气体传感器的方法。

    THERMAL MANAGEMENT SYSTEM WITH GRAPHENE-BASED THERMAL INTERFACE MATERIAL
    10.
    发明申请
    THERMAL MANAGEMENT SYSTEM WITH GRAPHENE-BASED THERMAL INTERFACE MATERIAL 审中-公开
    具有基于石墨的热界面材料的热管理系统

    公开(公告)号:US20100128439A1

    公开(公告)日:2010-05-27

    申请号:US12276498

    申请日:2008-11-24

    IPC分类号: H05K7/20 C09K5/14

    CPC分类号: C09K5/14

    摘要: A thermal management system includes graphene paper disposed between a heat source and a heat sink to transfer heat therebetween. The graphene paper is oriented such that the individual layers are substantially perpendicular to the plane of the heat source and the plane of the heat sink to maximize heat transfer. The heat source and the heat sink can be any physical structure that emits and absorbs thermal energy, respectively. The graphene paper may be bonded to the heat source and the heat sink using a bonding agent, such as a thermally conductive material, and the like. The graphene paper may be formed in several different configurations, such as a spring structure, and the like.

    摘要翻译: 热管理系统包括设置在热源和散热器之间以在其间传热的石墨烯纸。 石墨烯纸被定向成使得各个层基本上垂直于热源的平面和散热器的平面以使热传递最大化。 热源和散热器可以分别发射和吸收热能的任何物理结构。 石墨烯纸可以使用诸如导热材料的粘合剂等结合到热源和散热器。 石墨烯纸可以形成为几种不同的构造,例如弹簧结构等。