摘要:
A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.
摘要:
An apparatus includes a set of first metal contact pads disposed on a low temperature co-fired ceramic substrate. A plurality of metalized interconnectors extend between a digital electronic component and the low temperature co-fired ceramic substrate. The apparatus is configured to operate at a temperature greater than 250 degrees Celsius.
摘要:
A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.
摘要:
A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.
摘要:
A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.
摘要:
A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.
摘要:
A sensor assembly includes an outer housing and at least one high-impedance sensing device positioned within the outer housing. The sensor assembly also includes a buffering circuit comprising at least one wide bandgap semiconductor device positioned within the outer housing. The buffering circuit is operatively coupled to the at least one high-impedance sensing device.
摘要:
A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first region and a second region to form a third region. A charge is depleted from the two dimensional electron gas (2DEG) channel in the third region to form a reversibly electrically non-conductive pathway from the first region to the second region. On applying a voltage potential to a gate electrode proximate to the third region allows electrical current to flow from the first region to the second region.
摘要:
A gas sensor is disclosed. The gas sensor includes a gas sensing layer including doped oxygen deficient tungsten oxide and a dopant selected from the group consisting of Re, Ni, Cr, V, W, and a combination thereof, at least one electrode positioned within a layer of titanium, and a response modification layer. The at least one electrode is in communication with the gas sensing layer and the gas sensing layer is capable of detecting at least one gas selected from the group consisting of NO, NO2, SOx O2, H2O, and NH3. A method of fabricating the gas sensor is also disclosed.
摘要翻译:公开了一种气体传感器。 气体传感器包括气体感测层,其包括掺杂的氧缺乏氧化钨和选自Re,Ni,Cr,V,W及其组合的掺杂剂,位于钛层内的至少一个电极,以及 响应修改层。 所述至少一个电极与所述气体感测层连通,并且所述气体感测层能够检测至少一种选自NO,NO 2,SO x O 2,H 2 O和NH 3的气体。 还公开了一种制造气体传感器的方法。
摘要:
A thermal management system includes graphene paper disposed between a heat source and a heat sink to transfer heat therebetween. The graphene paper is oriented such that the individual layers are substantially perpendicular to the plane of the heat source and the plane of the heat sink to maximize heat transfer. The heat source and the heat sink can be any physical structure that emits and absorbs thermal energy, respectively. The graphene paper may be bonded to the heat source and the heat sink using a bonding agent, such as a thermally conductive material, and the like. The graphene paper may be formed in several different configurations, such as a spring structure, and the like.