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    METHOD AND SYSTEM FOR ETCHING A HAFNIUM CONTAINING MATERIAL
    2.
    发明申请
    METHOD AND SYSTEM FOR ETCHING A HAFNIUM CONTAINING MATERIAL 审中-公开
    用于蚀刻含铪材料的方法和系统

    公开(公告)号：US20080217294A1

    公开(公告)日：2008-09-11

    申请号：US11684072

    申请日：2007-03-09

    申请人： Akiteru Ko ,  Takashi Enomoto ,  Asao Yamashita

    发明人： Akiteru Ko ,  Takashi Enomoto ,  Asao Yamashita

    IPC分类号： B44C1/22 ,  G06F19/00

    CPC分类号： H01L21/31111 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/334

    摘要： A method of etching a hafnium containing layer includes disposing a substrate having the hafnium containing layer in a plasma processing system, wherein a mask layer defining a pattern therein overlies the hafnium containing layer. A process gas including a HBr gas is introduced to the plasma processing system, and a plasma is formed from the process gas in the plasma processing system. The hafnium containing layer is exposed to the plasma in order to treat the hafnium containing layer. The hafnium containing layer is then wet etched using a dilute HF wet etch process.

    摘要翻译： 蚀刻含铪层的方法包括将具有含铪层的基板设置在等离子体处理系统中，其中限定图案的掩模层覆盖在含铪层上。 将包括HBr气体的工艺气体引入等离子体处理系统中，并且从等离子体处理系统中的处理气体形成等离子体。 将含铪层暴露于等离子体以处理含铪层。 然后使用稀的HF湿蚀刻工艺对含铪层进行湿法蚀刻。

    Etch process for controlling pattern CD and integrity in multi-layer masks
    3.
    发明授权
    Etch process for controlling pattern CD and integrity in multi-layer masks 有权
    用于控制图案CD的蚀刻过程和多层蒙版的完整性

    公开(公告)号：US08334083B2

    公开(公告)日：2012-12-18

    申请号：US13053215

    申请日：2011-03-22

    申请人： Vinh Hoang Luong ,  Akiteru Ko

    发明人： Vinh Hoang Luong ,  Akiteru Ko

    IPC分类号： G03F1/50 ,  G03F1/54 ,  G03F7/00

    CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/31122 ,  H01L21/31138 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

    摘要： A method of patterning a multi-layer mask is described. The method includes preparing a multi-layer mask on a substrate, wherein the multi-layer mask includes a lithographic layer and an intermediate mask layer underlying the lithographic layer, and wherein the intermediate mask layer comprises a carbon-containing compound. The method further includes: establishing an etch process recipe for transferring a pattern, that is formed in the lithographic layer and characterized by an initial pattern critical dimension (CD), to the intermediate mask layer; establishing at least one parametric relationship between an intermediate pattern CD to be formed in the intermediate mask layer and at least one process parameter, wherein the at least one parametric relationship provides process conditions capable of increasing and decreasing the initial pattern CD to the intermediate pattern CD; selecting a target process condition to achieve a target CD adjustment between the initial pattern CD and the intermediate pattern CD; and transferring the pattern from the lithographic layer to the intermediate mask layer using the target process condition.

    摘要翻译： 描述了图案化多层掩模的方法。 该方法包括在衬底上制备多层掩模，其中所述多层掩模包括光刻层和位于所述光刻层下面的中间掩模层，并且其中所述中间掩模层包括含碳化合物。 该方法还包括：建立用于传送在光刻层中形成并且由初始图案临界尺寸（CD）表征的图案的蚀刻工艺配方到中间掩模层; 建立要形成在中间掩模层中的中间图案CD与至少一个工艺参数之间的至少一个参数关系，其中所述至少一个参数关系提供能够增加和减小初始图案CD到中间图案CD的工艺条件 ; 选择目标处理条件以在初始图案CD和中间图案CD之间实现目标CD调整; 并使用目标工艺条件将图案从光刻层转移到中间掩模层。

    Etch process for reducing silicon recess
    9.
    发明授权
    Etch process for reducing silicon recess 有权
    用于减少硅凹槽的蚀刻工艺

    公开(公告)号：US08268184B2

    公开(公告)日：2012-09-18

    申请号：US12826488

    申请日：2010-06-29

    申请人： Akiteru Ko ,  Christopher Cole

    发明人： Akiteru Ko ,  Christopher Cole

    IPC分类号： B44C1/22

    CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3266 ,  H01J37/32724

    摘要： A method for selectively etching a substrate is described. The method includes disposing a substrate comprising a silicon nitride (SiNy) layer overlying silicon in a plasma etching system, and transferring a pattern to the silicon nitride layer using a plasma etch process, wherein the plasma etch process utilizes a process composition having as incipient ingredients a process gas containing C, H and F, and an additive gas including CO2. The method further includes: selecting an amount of the additive gas in the plasma etch process to achieve: (1) a silicon recess formed in the silicon having a depth less than 10 nanometers (nm), and (2) a sidewall profile in the pattern having an angular deviation from 90 degrees less than 2 degrees.

    摘要翻译： 描述了一种用于选择性蚀刻衬底的方法。 该方法包括在等离子体蚀刻系统中设置包括硅覆盖硅的氮化硅（SiNy）层的衬底，以及使用等离子体蚀刻工艺将图案转移到氮化硅层，其中等离子体蚀刻工艺利用具有初始成分的工艺组合物 含有C，H和F的工艺气体和包括CO 2的添加气体。 该方法还包括：在等离子体蚀刻工艺中选择一定量的添加气体以实现：（1）在硅中形成的具有深度小于10纳米（nm）的硅凹槽，和（2）在 图案具有小于2度的90度的角度偏差。

    Method and system for etching silicon oxide and silicon nitride with high selectivity relative to silicon
    10.
    发明申请
    Method and system for etching silicon oxide and silicon nitride with high selectivity relative to silicon 审中-公开
    用于以高选择性相对于硅蚀刻氧化硅和氮化硅的方法和系统

    公开(公告)号：US20070059938A1

    公开(公告)日：2007-03-15

    申请号：US11226452

    申请日：2005-09-15

    申请人： Hanako Kida ,  Masaaki Hagihara ,  Akiteru Ko

    发明人： Hanako Kida ,  Masaaki Hagihara ,  Akiteru Ko

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31116 ,  H01J37/32082 ,  H01J37/32935

    摘要： A method and system for etching features in a substrate, whereby silicon oxide or silicon nitride or both are etched with high selectivity relative to silicon. In one embodiment, the process chemistry utilized to achieve high selectivity includes trifluoromethane (CHF3), difluoromethane (CH2F2), an oxygen containing gas, such as O2, and an optional inert gas, such as argon.

    摘要翻译： 用于蚀刻衬底中的特征的方法和系统，由此相对于硅以高选择性蚀刻氧化硅或氮化硅或两者。 在一个实施方案中，用于实现高选择性的方法化学品包括三氟甲烷（CH 3）3，二氟甲烷（CH 2 SO 2 H 2），氧 例如O 2，以及任选的惰性气体，例如氩气。