公开(公告)号：US20230137512A1

公开(公告)日：2023-05-04

申请号：US17517911

申请日：2021-11-03

申请人： WESTERN DIGITAL TECHNOLOGIES, INC.

发明人： Hui Xu ,  Kim Lee Bock ,  Rama Shukla ,  Chong Un Tan ,  Yoong Tatt Chin ,  Shrikar Bhagath

IPC分类号： H05K1/02 ,  H05K1/11

摘要： A semiconductor memory device, also referred to as a solid state drive, includes thermally conductive components such as a conductive coating to draw heat away from the semiconductive package. The coating may also be electrically conductive to provide shielding from and absorption of electromagnetic interference. In examples, a semiconductor device including a substrate may be affixed to an edge connector printed circuit board with solder balls to form a solid state drive. In further examples, the substrate may be omitted, and semiconductor memory dies, a controller die and other electronic components may be directly surface mounted to an edge connector printed circuit board to form a solid state drive.

公开(公告)号：US20230020021A1

公开(公告)日：2023-01-19

申请号：US17375296

申请日：2021-07-14

申请人： Western Digital Technologies, Inc.

发明人： Ling Yang ,  Hui Xu ,  Chong Un Tan

IPC分类号： H01L25/065 ,  H01L23/00

摘要： A semiconductor assembly includes a first die and a second die. The semiconductor assembly also includes a film on die (FOD) layer configured to attach the first die to the second die. The FOD layer is disposed on a first surface of the first die. The FOD layer includes a first portion comprising a first die attach film (DAF) disposed on an inner region of the first surface. The FOD layer also includes a second portion that includes a second DAF disposed on a peripheral region of the first surface surrounding the inner region. The second DAF includes a different material than the first DAF.