利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.012 秒)

    Triple diffused high voltage transistor
    1.
    发明授权
    Triple diffused high voltage transistor 失效
    三通扩散高压晶体管

    公开(公告)号：US3798079A

    公开(公告)日：1974-03-19

    申请号：US3798079D

    申请日：1972-06-05

    申请人： WESTINGHOUSE ELECTRIC CORP

    发明人： CHANG KWEI CHU ,  KRISHNA S

    IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L23/31 ,  H01L29/36 ,  H01L29/74 ,  H01L3/14

    CPC分类号： H01L29/36 ,  H01L23/3157 ,  H01L2924/0002 ,  Y10S148/121 ,  Y10S148/151 ,  Y10S148/157 ,  H01L2924/00

    摘要： A high voltage transistor with improved surge voltage capacity is formed in a silicon semiconductor body of thickness of at least 4 mils and having two opposed major surfaces and a resistivity of at least 30 ohm-centimeters. A collector region adjoins a major surface and is comprised of three portions: The first collector portion adjoins a PN junction and has a substantially uniform dopant concentration therethrough corresponding to the resistivity of the body to support a desired reverse breakdown voltage. The second collector portion adjoins the major surface and has a dopant concentration of at least 1 X 1019 atoms per cubic centimeter at said surface and a steep dopant concentration gradient to provide for good ohmic and thermal contact properties. The third collector portion is intermediate the first and second collector portions and has higher dopant concentrations than said first collector portion, but lower than said second collector portion, and has a shallower dopant concentration gradient that said second collector portion to support a reverse breakdown surge voltage through the transistor. Preferably the transistor is the PNP type made by simultaneously diffusing boron and gallium and/or aluminum into the major surface of a silicon wafer or body having a given concentration level of N-type dopant therethrough. Thus the various portions of the collector region are simultaneously formed.

    摘要翻译： 具有改善的浪涌电压容量的高电压晶体管形成在至少4密耳厚度的硅半导体主体中并且具有两个相对的主表面和至少30欧姆厘米的电阻率。 集电极区域邻接主表面并且由三部分组成：第一集电极部分邻接PN结，并且具有通过其对应于主体的电阻率以支持期望的反向击穿电压的基本上均匀的掺杂剂浓度。 第二集电器部分邻接主表面，并且在所述表面处具有至少1×1019个原子/立方厘米的掺杂剂浓度和陡峭的掺杂剂浓度梯度以提供良好的欧姆和热接触性能。 第三集电极部分在第一和第二集电极部分之间，并且具有比所述第一集电极部分高但低于所述第二集电极部分的掺杂剂浓度，并且具有较浅的掺杂剂浓度梯度，所述第二集电极部分支持反向击穿浪涌电压 通过晶体管。

    Double diffused high voltage, high current npn transistor
    2.
    发明授权
    Double diffused high voltage, high current npn transistor 失效
    双通道高电压，高电流NPN晶体管

    公开(公告)号：US3777227A

    公开(公告)日：1973-12-04

    申请号：US3777227D

    申请日：1972-08-21

    申请人： WESTINGHOUSE ELECTRIC CORP

    发明人： KRISHNA S ,  DAVIS J

    IPC分类号： H01L21/00 ,  H01L21/331 ,  H01L29/00 ,  H01L29/73 ,  H01L5/00

    CPC分类号： H01L29/00 ,  H01L21/00 ,  H01L29/73 ,  Y10S148/04 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/121 ,  Y10S148/135 ,  Y10S148/151 ,  Y10S148/157

    摘要： An NPN transistor with high voltage and high current capacities is provided in a semiconductor body having a thin internal portion and a thick integral peripheral portion. The thin portion has a substantially uniform width of greater than about 28 microns and oppositely facing surface areas each of greater than about 0.10 cm2. The thick peripheral portion has a width greater than about 150 microns and annular dimension i.e. radial width greater than 10 microns. The base region has two contiguous impurity portions. A first impurity portion adjoins a major, preferably planar surface of the semiconductor body at the peripheral portion and has an impurity concentration of boron of at least 1 X 1019 atoms per cubic centimeter at the surface and a steep impurity concentration gradient to provide good ohmic and thermal properties. A second contiguous impurity portion is in internal portions of the body between emitter and collector regions and has a lower impurity concentration of gallium and/or aluminum and shallower impurity concentration gradient than the first impurity portion. Preferably, first and second impurity portions of the base region are formed by the simultaneous diffusion of boron and gallium and/or aluminum.

    摘要翻译： 具有高电压和高电流容量的NPN晶体管设置在具有薄的内部部分和厚整体的周边部分的半导体本体中。 薄部分具有大于约28微米的基本均匀的宽度，并且相对面对的表面区域大于约0.10cm 2。 厚的周边部分具有大于约150微米的宽度和环形尺寸，即径向宽度大于10微米。 碱性区域具有两个连续的杂质部分。 第一杂质部分邻接半导体本体的外围部分的主要优选平面表面，并且在表面处具有至少1×10 19原子/立方厘米的硼的杂质浓度和陡峭的杂质浓度梯度以提供良好的欧姆和 热性能。 第二连续杂质部分在发射极和集电极区域之间的本体的内部部分中，并且具有比第一杂质部分更低的镓和/或铝的杂质浓度较低的杂质浓度梯度。 优选地，通过硼和镓和/或铝的同时扩散来形成基极区的第一和第二杂质部分。

    Schottky barrier plasma thyristor circuit
    4.
    发明授权
    Schottky barrier plasma thyristor circuit 失效
    SCHOTTKY BARRIER等离子体电路板电路

    公开(公告)号：US3829880A

    公开(公告)日：1974-08-13

    申请号：US32140973

    申请日：1973-01-05

    申请人： WESTINGHOUSE ELECTRIC CORP

    发明人： KRISHNA S

    IPC分类号： H01L29/86 ,  H01L29/00 ,  H01L29/74 ,  H01L9/00

    CPC分类号： H01L29/00

    摘要： A plasma thyristor is provided for faster recycling of the plasma mode and sharper output signals. A silicon semiconductor body has a low impurity concentration preferably below 5 X 1014 atoms/cm3, has first and second opposed major surfaces, and preferably has a width of greater than about 80 microns. A first Schottky barrier contact is made at the first major surface. A second Schottky barrier or ohmic contact is made at the second major surface. Power sources apply (i) a reverse bias voltage across the first Schottky barrier contact between the contacts causing the carrier depletion field to extend from the first Schottky barrier contact the width of the body to the second contact, and (ii) a current pulse across the body between the contacts having a density greater than the saturation current density of the body. Preferably, the plasma thyristor is used to generate high power, fast rise-time electrical signals.

    摘要翻译： 提供等离子体晶闸管，用于更快速地回收等离子体模式和更清晰的输出信号。 硅半导体本体具有优选低于5×10 14原子/ cm 3的低杂质浓度，具有第一和第二相对的主表面，并且优选具有大于约80微米的宽度。 第一个主表面上形成了第一个肖特基势垒接触。 在第二主表面上形成第二肖特基势垒或欧姆接触。 电源应用（i）触点之间的第一肖特基势垒接触处的反向偏置电压，导致载流子耗尽场从第一肖特基势垒接触到体的宽度到第二接触，以及（ii）跨过 触点之间的主体具有大于身体的饱和电流密度的密度。 优选地，等离子体晶闸管用于产生高功率，快速上升时间的电信号。

    High gain, low saturation transistor
    5.
    发明授权
    High gain, low saturation transistor 失效
    高增益，低饱和度晶体管

    公开(公告)号：US3771028A

    公开(公告)日：1973-11-06

    申请号：US3771028D

    申请日：1972-05-26

    申请人： WESTINGHOUSE ELECTRIC CORP

    发明人： DAVIS J ,  KRISHNA S

    IPC分类号： H01L29/73 ,  H01L21/00 ,  H01L21/308 ,  H01L21/331 ,  H01L29/00 ,  H01L5/00

    CPC分类号： H01L21/00 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/00 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/135

    摘要： A high current transistor with high gain and low power loss is provided in a semiconductor body having a membranous internal portion of substantially uniform thickness of less than about 60 microns and of oppositely facing surfaces each of greater than about 0.10 cm2 in area, and a thick peripheral portion of greater than about 150 microns. Thus a narrow base region of less than about 52 microns and preferably less than about 20 microns in width having a substantially uniform, precisely dimensioned thickness is provided at the internal portion of the body between shallow, highly doped, preferably conjugate emitter and collector regions. Ohmic contacts are made to the collector and emitter regions at the opposite surfaces of the internal portion, and ohmic contact is made to the base region at the peripheral portion of the semiconductor body. Preferably the transistor is made by a method involving deep etching of the semiconductor body after electroplating an etchant resistant coating onto selected surface portions of the body.

    摘要翻译： 具有高增益和低功率损耗的高电流晶体管被提供在具有小于约60微米的基本均匀厚度的膜内部部分和面积大于约0.10cm 2的相对面对的表面的半导体主体中， 周边部分大于约150微米。 因此，在浅的，高度掺杂的，优选共轭的发射极和集电极区域之间，在本体的内部部分处提供具有基本上均匀的精确尺寸的厚度的小于约52微米，优选小于约20微米的窄基部区域，优选地小于约20微米。 在内部的相对表面上的集电极和发射极区域形成欧姆接触，并且在半导体本体的周边部分处对基极区域进行欧姆接触。