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    Adaptive control method for rapid thermal processing of a substrate
    8.
    发明申请
    Adaptive control method for rapid thermal processing of a substrate 有权
    一种基板快速热处理的自适应控制方法

    公开(公告)号：US20070238202A1

    公开(公告)日：2007-10-11

    申请号：US11393423

    申请日：2006-03-30

    申请人： Joseph Ranish ,  Tarpan Dixit ,  Dean Jennings ,  Balasubramanian Ramachandran ,  Aaron Hunter ,  Wolfgang Aderhold ,  Bruce Adams ,  Wen Chang

    发明人： Joseph Ranish ,  Tarpan Dixit ,  Dean Jennings ,  Balasubramanian Ramachandran ,  Aaron Hunter ,  Wolfgang Aderhold ,  Bruce Adams ,  Wen Chang

    IPC分类号： H01L21/66 ,  G01R31/26

    CPC分类号： H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.

    摘要翻译： 本发明一般涉及用于衬底的快速热处理（RTP）的方法。 本发明的实施例包括使用实时自适应控制算法或通过使用从针对各种基板类型设计的一套固定控制算法中选择的控制算法来控制热处理。 控制算法的选择基于在热处理期间测量的衬底的光学性质。 在一个实施例中，使用控制算法的组合，其中大多数灯分组由固定控制算法控制，并且通过自适应控制算法来控制基本上较少数量的灯区。

    Semiconductor thermal process control
    9.
    发明申请
    Semiconductor thermal process control 失效
    半导体热过程控制

    公开(公告)号：US20050254804A1

    公开(公告)日：2005-11-17

    申请号：US11103968

    申请日：2005-04-11

    申请人： Wolfgang Aderhold ,  Balasubramanian Ramachandran ,  Leonid Tertitski ,  Patrick Stone

    发明人： Wolfgang Aderhold ,  Balasubramanian Ramachandran ,  Leonid Tertitski ,  Patrick Stone

    IPC分类号： H01L21/00 ,  F26B3/30

    CPC分类号： H01L21/67248 ,  H01L21/67115

    摘要： During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.

    摘要翻译： 在制造期间，根据热配方照射旋转的半导体衬底。 半导体衬底的温度测量结果与每个温度测量时的半导体衬底的位置一起获得。 然后确定半导体衬底的位置是否应过滤温度测量的至少一个特定温度测量。 如果是这样，则获得至少一个过滤的温度测量值。 随后基于温度测量，至少一个过滤温度测量和热配方控制半导体衬底的辐射。

    Epitaxial chamber with cross flow
    10.
    发明授权
    Epitaxial chamber with cross flow 有权
    具有交叉流动的外延室

    公开(公告)号：US09127360B2

    公开(公告)日：2015-09-08

    申请号：US12887647

    申请日：2010-09-22

    申请人： Balasubramanian Ramachandran ,  Errol Antonio C. Sanchez ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Harpreet Singh Juneja ,  Zuoming Zhu

    发明人： Balasubramanian Ramachandran ,  Errol Antonio C. Sanchez ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Harpreet Singh Juneja ,  Zuoming Zhu

    IPC分类号： C30B25/14 ,  C23C16/455 ,  H01L21/02

    CPC分类号： C23C16/455 ,  C23C16/45523 ,  C30B25/14 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262

    摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a substrate support disposed therein to support a processing surface of a substrate at a desired position within the process chamber; a first inlet port to provide a first process gas over the processing surface of the substrate in a first direction; a second inlet port to provide a second process gas over the processing surface of the substrate in a second direction different from the first direction, wherein an azimuthal angle measured between the first direction and the second direction with respect to a central axis of the substrate support is up to about 145 degrees; and an exhaust port disposed opposite the first inlet port to exhaust the first and second process gases from the process chamber.

    摘要翻译： 本文提供了用于处理衬底的方法和设备。 在一些实施例中，用于处理衬底的设备包括处理室，其具有设置在其中的衬底支撑件，以在处理室内的期望位置处支撑衬底的处理表面; 第一入口端口，用于在第一方向上在衬底的处理表面上提供第一工艺气体; 第二入口端口，用于在不同于第一方向的第二方向上在衬底的处理表面上提供第二工艺气体，其中在第一方向和第二方向之间相对于衬底支撑件的中心轴线测量的方位角 高达约145度; 以及与第一入口相对设置的排气口，以从处理室排出第一和第二处理气体。