公开(公告)号：US20070125656A1

公开(公告)日：2007-06-07

申请号：US11292606

申请日：2005-12-01

申请人： Wai Fu ,  Hieu Lam ,  Shahram Mehdizadeh ,  Yeak-Chong Wong

发明人： Wai Fu ,  Hieu Lam ,  Shahram Mehdizadeh ,  Yeak-Chong Wong

IPC分类号： C25D21/12

CPC分类号： C25D21/12 ,  C25D17/001

摘要： Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.

摘要翻译： 本发明的实施例涉及在电镀过程中控制晶片的厚度。 接收关于在前一晶片的电镀过程期间使用的旧电流的信息。 接收与前一晶片的厚度有关的信息。 自动确定新的电流。 在新的晶片的电镀过程中使用新的电流。 基于与旧电流有关的信息和与先前晶片的厚度相关的信息来确定新电流。