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1.发明授权Epitaxial deposition of III-V compounds containing isoelectronic impurities 失效含有ISOE电子污染物的III-V化合物的外延沉积公开(公告)号：US4001056A
公开(公告)日：1977-01-04
申请号：US522380
申请日：1974-11-11
Applicant: Warren O. Groves , Arnold S. Epstein
Inventor： Warren O. Groves , Arnold S. Epstein
IPC: H01L21/205 , H01L29/207 , H01L21/20 , H01L29/12
CPC classification number: H01L29/207 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02573 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02661 , Y10S148/04 , Y10S148/099 , Y10S148/11
Abstract: The disclosure herein pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaP, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.
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公开(公告)号：US3931631A
公开(公告)日：1976-01-06
申请号：US457025
申请日：1974-04-01
Applicant: Warren O. Groves , Arnold S. Epstein
Inventor： Warren O. Groves , Arnold S. Epstein
IPC: H01L33/00
CPC classification number: H01L33/00
Abstract: The disclosure herein pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaP, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.
Abstract translation: 本文的公开内容涉及用于制备电致发光材料的气相方法，特别是掺杂有等电子杂质，特别是氮的GaP，以及由其制造的电致发光器件。
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3.再颁专利GaAs.sub.1-x P.sub.x electroluminescent device doped with isoelectronic impurities 失效GaAs掺杂等电子杂质的GaAs {hd 1-x {b P {HD x {b电致发光器件
公开(公告)号：USRE29845E
公开(公告)日：1978-11-21
申请号：US775070
申请日：1977-03-07
Applicant: Warren O. Groves , Arno H. Herzog , Magnus G. Craford
Inventor： Warren O. Groves , Arno H. Herzog , Magnus G. Craford
IPC: H01L21/205 , H01L33/00 , H01L33/30
CPC classification number: H01L33/305 , H01L33/00 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01L2224/85205 , H01L24/45 , H01L2924/12036 , Y10S148/049 , Y10S148/056 , Y10S148/057 , Y10S148/059 , Y10S148/065 , Y10S148/067 , Y10S148/072 , Y10S148/099 , Y10S148/107 , Y10S148/119 , Y10S148/135 , Y10S438/918
Abstract: The disclosure herein pertains to the preparation of semiconductor materials and solid-state devices fabricated therefrom. More particularly, the disclosure pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaAs.sub.1-x P.sub.x, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.
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4.再颁专利Process for the preparation of electroluminescent III-V materials containing isoelectronic impurities 失效制备含有等电子杂质的电致发光III-V材料的方法
公开(公告)号：USRE29648E
公开(公告)日：1978-05-30
申请号：US775069
申请日：1977-03-07
Applicant: Warren O. Groves , Arno H. Herzog , Magnus G. Craford
Inventor： Warren O. Groves , Arno H. Herzog , Magnus G. Craford
IPC: H01L21/223 , H01L29/207 , H01L33/00 , H05B33/10 , H05B33/14
CPC classification number: H05B33/145 , H01L21/2233 , H01L29/207 , H01L33/00 , H05B33/10
Abstract: The disclosure herein pertains to the preparation of semiconductor materials and solid-state devices fabricated therefrom. More particularly, the disclosure pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaAs.sub.1-x P.sub.x, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.
