摘要:
A connecting terminal has a configuration in which a plurality of parts of a first line (2) and respective corresponding plurality of parts of a second line (6) are connected to each other by a transparent conductive thin film (10). In a connecting terminal part, the plurality of parts of the first line (2) and the respective corresponding plurality of parts of the second line (6) are connected to each other in parallel. With the configuration, it is possible to greatly reduce a risk of disconnection. It is therefore possible to prevent disconnection from being caused by corrosion in the connecting terminal part of a display apparatus etc.
摘要:
The present invention is a substrate for use in a display panel. According to the substrate, lines (102, 106, 107, and 113) provided in a display region on the substrate are made up of multiple layers whose uppermost layers (102c, 106c, 107c, and 113c) are each made from (i) an oxide of first metal selected from the group consisting of copper, titanium, and molybdenum or (ii) a nitride of copper. This can prevent external light from being reflected and thereby improve a contrast in a bright room.
摘要:
An active matrix substrate (20a) includes a gate electrode (25) formed on an insulating substrate (10a), and a planarizing film (26) formed on the gate electrode (25) and made of a baked SOG material. The gate electrode (25) is a multilayer film including a first conductive film (27) formed on the insulating substrate (10a) and made of a metal except copper, a second conductive film (28) formed on the first conductive film (27) and made of copper, and a third conductive film (29) formed on the second conductive film (28) and made of the metal except copper.
摘要:
An active matrix substrate (20a) includes a gate electrode (25) formed on an insulating substrate (10a), and a planarizing film (26) formed on the gate electrode (25) and made of a baked SOG material. The gate electrode (25) is a multilayer film including a first conductive film (27) formed on the insulating substrate (10a) and made of a metal except copper, a second conductive film (28) formed on the first conductive film (27) and made of copper, and a third conductive film (29) formed on the second conductive film (28) and made of the metal except copper.
摘要:
The present invention provides a thin film transistor including an oxide semiconductor layer (4) for electrically connecting a signal electrode (6a) and a drain electrode (7a), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer (6b) made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer (6b) being in touch with the signal electrode (6a) and the oxide semiconductor layer (4) and separating the signal electrode (6a) from the oxide semiconductor layer (4). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.
摘要:
A method for manufacturing a display device 10 includes a substrate supporting step for supporting a plastic substrate 19 on a support substrate 50, with the plastic substrate 19 curved, and a thin film lamination step for laminating a plurality of thin films on the plastic substrate 19 supported on the support substrate 50.
摘要:
A production method of a semiconductor element having a channel includes forming a resist pattern film on a thin film formed on a substrate, and pattering the thin film by etching. The production method also includes forming a second resist pattern film by applying a fluid resist material inside a channel groove after channel etching or inside a resist groove formed above a channel region before channel etching. The production method may also include forming a gate electrode, a gate insulating film, a semiconductor film, and a conductive film on an insulating substrate. The method may include applying the fluid resist material inside the channel groove, thereby forming the second resist pattern film, and patterning the semiconductor film using at least the second resist pattern film.
摘要:
An earphone includes an earphone casing inside which a sound path that guides sound to a sound discharging hole is formed, and an acoustic transducer disposed inside the earphone casing. The acoustic transducer includes an accommodation casing having accommodated therein a yoke on which paired magnets disposed so as to face each other are mounted, a coil to which a driving current is supplied, an armature provided with a vibrating part vibrating when the driving current is supplied to the coil, the vibrating part being disposed between the paired magnets, and a diaphragm coupled to the vibrating part of the armature, a sound output hole is formed on a surface that faces a vibration surface of the diaphragm in the accommodation casing, and the acoustic transducer has the sound output hole disposed in the earphone casing so that the sound output hole is acoustically coupled to the sound path.
摘要:
In porous ceramic for slide member including independent pores having a pore size of 5 μm or more, the independent pore is flattened body having minor axis in a direction perpendicular to a sliding surface, and a cross sectional area (S1) of an independent pore at a cross section perpendicular to the sliding surface is 95% or less of an area (S2) of a complete round having a diameter which is the same length as a major axis of the cross section of the independent pore, and in a cumulative distribution curve of pore sizes of independent pores in a plane parallel to the sliding surface, a ratio (P75/P25) of a pore size of cumulative 75% by volume (P75) to a pore size of cumulative 25% by volume (P25) is 1.9 or less. The porous ceramic can be suitably used as slide member such as seal ring.
摘要:
An ink jet recording medium comprising a substrate and an ink receiving layer which is provided on at least one surface of the substrate and contains inorganic fine particles having an average secondary particle size of 1-4 μm as measured by a Coulter counter method in an amount of 0.2-2.0 g/m2 in terms of solid content mass. The ink receiving layer satisfies the following conditions with respect to a pore distribution curve as determined by a nitrogen adsorption method: (1) total pore volume in a pore size range of 10-30 nm is 0.25 ml/g or more, (2) total pore volume in a pore size range of 30-70 nm is 0.1 ml/g or more, and (3) volume ratio of the total pore volume in the pore size range of 10-30 nm to the total pore volume in the pore size range of 30-70 nm is from 1:0.4 to 1:1.